Papers - SAKASHITA, Mitsuo
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Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited Reviewed
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
ECS Trans. Vol. 98 ( 5 ) page： 149 - 156 2020.9
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Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks Reviewed
Doi Takuma, Shibayama Shigehisa, Takeuchi Wakana, Sakashita Mitsuo, Taoka Noriyuki, Shimizu Mitsuaki, Nakatsuka Osamu
APPLIED PHYSICS LETTERS Vol. 116 ( 22 ) 2020.6
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Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing Reviewed
S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka
Jpn. J. Appl. Phys. Vol. 59 page： SMMA04-1 2020.4
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Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor Reviewed
Takeuchi Wakana, Kutsuki Katsuhiro, Kagoshima Eiji, Onishi Toru, Iwasaki Shinya, Sakashita Mitsuo, Fujiwara Hirokazu, Nakatsuka Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 59 2020.4
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Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Invited Reviewed
O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima
ECS Trans. 2019 Vol. 92 page： 41 2019.10
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Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate Reviewed
Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.8
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Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed
K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
Applied Physics Express Vol. 12 page： 051016 2019.5
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Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) Reviewed
Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.4
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Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment Reviewed
T. Doi, W. Takeuchi, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 58 page： SBBD05 2019.2
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Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2
Senga Kazuki, Shibayama Shigehisa, Sakashita Mitsuo, Zaima Shigeaki, Nakatsuka Osamu
2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) page： . 2019
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Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny Quantum Well Structures
Suwito Galih Ramadana, Fukuda Masahiro, Shibayama Shigehisa, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) page： . 2019
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Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed
M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima
Jpn. J. Appl. Phys. Vol. 58 page： SAAS02 2018.11
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Optoelectronic properties of high-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure Reviewed
M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
Semicond. Sci. Tech. Vol. 33 ( 12 ) page： 124018 2018.11
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A New Application of Ge1-xSnx: Thermoelectric Materials Invited Reviewed
M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
ECS Trans. 2018 Vol. 86 ( 7 ) page： 321-328 2018.10
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Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge Reviewed
Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 6 ) 2018.6
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Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed
Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 4 ) 2018.4
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High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed
Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki
APPLIED PHYSICS LETTERS Vol. 112 ( 6 ) 2018.2
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Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor Reviewed
Takeuchi Wakana, Yamamoto Kensaku, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Sigeaki
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 1 ) 2018.1
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Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator
Takahashi Kouta, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki, Kurosawa Masashi
2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) page： 313 - 315 2018
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Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers Reviewed
Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Vol. 70 page： 162-166 2017.11