Presentations -
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Development of GeSn thin film technology for electronic and optoelectronic applications Invited International conference
2016 Energy Materials Nanotechnology (EMN) Summer Meeting and Photodetectors Meeting
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International collaboration: the path to breakthroughs in (Si)GeSn material development International conference
12th International Nanotechnology Conference on Communication ans Cooperation (INC12)
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Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties International conference
8th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 9th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2016)
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Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property International conference
8th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 9th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2016)
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Structural and Electrical Properties of Low Temperature CVD-Grown SiGe Epitaxial Layers International conference
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping International conference
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer International conference
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties International conference
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers International conference
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers International conference
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Strain measurement of heteroepitaxial GeSn/Ge with a finFET structure International conference
K. Saitoh, K. Doi, N. Tanaka, S. Ike, O. Nakatsuka, S. Zaima
International Symposium on EcoTopia Science 2015 (ISETS '15)
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Schottky Barrier Engineering by Epitaxial Metal Germanide/Germanium Contacts International conference
International Symposium on EcoTopia Science 2015 (ISETS '15)
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X-ray Microdiffraction Characterization of Local Strain Distribution in GeSn/Ge Nanostructures International conference
International Symposium on EcoTopia Science 2015 (ISETS '15)
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Silicon-tin semiconductors for near-infrared optoelectronic device applications International conference
International Symposium on EcoTopia Science 2015 (ISETS '15)
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Calculation of Si1-xSnx Energy Band Structures by using Density Functional Theory Considering Atomic Configuration International conference
International Symposium on EcoTopia Science 2015 (ISETS '15)
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Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions International conference
International Symposium on EcoTopia Science 2015 (ISETS '15)
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Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer International conference
International Symposium on EcoTopia Science 2015 (ISETS '15)
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Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping International conference
International Symposium on EcoTopia Science 2015 (ISETS '15)
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Recent Progress of Silicon Tin Alloys for Advanced Semiconductor Devices International conference
M. Kurosawa, O. Nakatsuka, and S. Zaima
International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015)
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Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications International conference
O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015)