Presentations -
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Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn) International conference
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Growth and Characterization of Ge1-x-ySixSny Epitaxial Layers for Solar Cell International conference
T. Yamaha, O. Nakatsuka, N. Taoka, W. Takeuchi and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Crystalline and Electrical Properties of Ni germanium/Ge(110) Contacts International conference
O. Nakatsuka, J. Yokoi, Y. Deng, N. Taoka and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Characterization of Local Strain around Trough Silicon Via Interconnects in Wafer-on-wafer Structures International conference
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba and S. Zaima
IEEE International 3D System Integration Conference 2011 (IEEE 3DIC 2011)
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Analysis of Strain Structures for Semiconductor Integrated Circuits with Micro Raman Spectroscopy International conference
O. Nakatsuka
The latest applications by the Modern Laser Raman Microscopy
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Materials Innovation in Si Nanoelectronics International conference
S. Zaima, O. Nakatsuka
2011 Tsukuba Nanotechnology Symposium (TNS'11)
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Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si (100) International conference
Y. Tamura, K. Kakushima, O. Nakatsuka, P. Ahmet, H. Nohira, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, and R. Yoshihara
15th The International Conference on Thin Films, 2011 (ICTF-15)
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Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure International conference
K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
15th The International Conference on Thin Films, 2011 (ICTF-15)
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Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-Oxide Film International conference
W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima
15th The International Conference on Thin Films, 2011 (ICTF-15)
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GeSn Technology: Impact of Sn on Ge CMOS Applications International conference
S. Zaima, O. Nakatsuka, Y. Shimura, M. Adachi, M. Nakamura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
220th The Electrochemical Society meeting (ECS 220th Meeting)
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Comprehensive Study of Local Strain Structures with High Strain Resolution for Through-Silicon Via Interconnects International conference
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
28th Annual Advanced Metallization Conference 2011 (AMC 2011)
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Control of Defect Properties in Ge Heteroepitaxial Layers by Sn Incorporation and H2-Annealing International conference
M. Adachi, Y. Shimura, O. Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials (SSDM 2011)
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Formation and Properties of Epitaxial NiGe/Ge(110) Contacts International conference
J. Yokoi, O. Nakatsuka, and S. Zaima,
International Conference on Solid State Devices and Materials (SSDM 2011)
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Strain and Dislocation Structures of Ge1-xSnx Heteroepitaxial Layers Grown on Ge(110) Substrates International conference
T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials (SSDM 2011)
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Strained Ge Layers on SiGe(Sn) Buffer Layers Formed by Solid-phase Mixing Method International conference
T. Yamaha, K. Mochizuki, Y. Shimura, O.Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials (SSDM 2011)
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Comprehensive Study of Local Strain Structures with High Strain Resolution for Through-Silicon Via Interconnects International conference
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
Advanced Metallization Conference 2011 (ADMETA plus 2011): 21st Asian Session
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Electrical and optical properties of GeSn alloys International conference
O. Nakatsuka, Y. Shimura, M. Adachi, M. Nakamura, and S. Zaima
2nd GeSnWorkshop: GeSn Development and Future Applications
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Improvement of Al2O3 Interfacial Properties by O2 Annealing International conference
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)
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Homogeneous Si0.5Ge0.5 Bulk Crystal Growth as Substrates for Strained Ge Thin Films by the Traveling Liquidus-Zone Method International conference
K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)
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Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates International conference
M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)