Presentations -
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Formation of Palladium Silicide on Heavily Doped Si (001) Substrates Using Ti Intermediate Layer International conference
R. Suryana, O. Nakatsuka, and S. Zaima
Advanced Metallization Conference 2009 (ADMETA): 19th Asian Session
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Mobility Behavior in Ge1-xSnx Layers Grown on SOI Substrates International conference
N. Tsutsui, Y. Shimura, O. Nakatsuka, A. Sakai, and S. Zaima,
2009 International Conference on Solid State Devices and Materials (SSDM)
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Influence of Interfacial Structure on Electrical Properties of Metal/Ge Schottky Contacts International conference
O. Nakatsuka, S. Akimoto, T. Nishimura and S. Zaima
The 9th International Workshop on Junction Technology (IWJT2009)
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Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing International conference
T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata
The 6th International Conference on Silicon Epitaxy and Heterostructures
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Formation and characterization of tensile-strained Ge layers on Ge1-xSnx buffer layers International conference
S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, and A. Sakai
The 6th International Conference on Silicon Epitaxy and Heterostructures
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Low Temperature Growth of Ge1-xSnx Buffer Layers for Tensile-strained Ge Layers International conference
Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima
The 6th International Conference on Silicon Epitaxy and Heterostructures
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Analysis of Local Strain in Ge1-xSnx /Ge/Si(001) Heterostructures by X-ray Microdiffraction International conference
O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai, Y. Imai, H. Tajiri, O. Sakata, S. Kimura, and S. Zaima
The 6th International Conference on Silicon Epitaxy and Heterostructures
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Effect of Atomic Deuterium Irradiation on Initial Growth of Sn and Ge1-xSnx on Ge(001) Substrates International conference
T. Shinoda, O. Nakatsuka, and S. Zaima
The 6th International Conference on Silicon Epitaxy and Heterostructures
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Direct Silicon Bonding (DSB) 基板の接合界面欠陥解析
豊田英二，酒井朗，中塚理，財満鎭明，磯貝宏道，仙田剛士，泉妻宏治
第56回応用物理学関係連合講演会
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低温成長による高Sn組成Ge1-xSnxバッファ層の形成
志村洋介，筒井宣匡，中塚理，酒井朗，財満鎭明
第56回応用物理学関係連合講演会
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Ge(001)表面上のSnおよびGe1-xSnx初期成長に及ぼす原子状重水素照射の効果
篠田竜也，中塚理，財満鎭明
第56回応用物理学関係連合講演会
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Ge/Si1-xGex/Siマイクロ構造形成による局所歪および転位挙動の制御
水谷卓也，望月健太，中塚理，近藤博基，酒井朗，財満鎭明
第56回応用物理学関係連合講演会
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Direct Si Bonding基板の界面酸化膜消滅熱処理過程における結晶性変化
加藤哲司，大原悠司，吉川純，中村芳明，酒井朗，中塚理，財満鎭明，豊田英二，泉妻宏治，木村滋，坂田修身
第56回応用物理学関係連合講演会
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原子状水素照射によるGe(001)表面上SnおよびGe1-xSnx初期成長構造の制御
篠田竜也，山崎理弘，中塚理，財満鎭明
第8回・日本表面科学会中部支部・学術講演会
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伸長歪Ge層実現のための高Sn組成Ge1-xSnxバッファ層成長
志村洋介，筒井宣匡，中塚理，酒井朗，財満鎭明
第8回・日本表面科学会中部支部・学術講演会
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Atomistic analysis of directly bonded Si substrate interface International conference
T. Ueda, Y. Ohara, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, T. Sakata, and H. Mori
The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)
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Formation of Uniaxial Tensile-strained Ge by using Micro-patterning of Ge/Si1-xGex/Si Structures International conference
T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima
The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)
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Formation and Characterization of Tensile-strained Ge layers on Ge1-xSnx Buffer Layers International conference
Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima
The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)
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Strain and interfacial defects in directly bonded Si substrates International conference
Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, H. Tajiri, O. Sakata and S. Kimura
The IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008)
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Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates International conference
E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, K. Omote, and S. Zaima
The 5th International Symposium on Advanced Science and Technology of Silicon Materials