Presentations -
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In-situ Ga Doping to Fully Strained Ge1-xSnx Heteroepitaxial Layers Grown on Ge(001) Substrates International conference
Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)
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Low Temperature Formation of Si1-x-yGexSny-on-Insulator Structures by Using Solid-Phase Mixing of Ge1-zSnz/Si-on-Insulator Substrates International conference
K. Mochizuki, T. Yamaha, Y. Shimura, O. Nakatsuka, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)
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Epitaxial Growth of Ge1-xSnx for Strained Ge CMOS Devices International conference
S. Zaima, Y. Shimura, S. Takeuchi and O. Nakatsuka
International Conference on Processing & Manufacturing of Advanced Materials (THERMEC' 2011)
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Control of Surface and Interfacial Structure by Radical Nitridation Technique for Ge MOS Transistors International conference
K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
The 4th International Conference on PLAsma-NanoTechnology & Science (IC-PLANTS 2011)
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Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation International conference
Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima
3rd International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPLasma 2011)
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Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique International conference
K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima
2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF 2011)
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Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma International conference
Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima
2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF 2011)
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Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-devices based on Fundamental Physics of Why Silicides Exist in Nature International conference
T.Nakayama, K. Kakushima, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, K. Ohmori, H. Iwai, S. Zaima, T. Chikyow, K. Shiraishi, and K. Yamada
2010 IEEE International Electron Devices Meeting
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Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors International conference
K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
The 1st Korea-Japan Symposium on Surface Technology
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Tensile-Strained Ge and Ge1-xSnx Layers for High-Mobility Channels in Future CMOS Devices International conference
S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi
International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010)
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Formation of Palladium Silicide Thin Layers on Si (110) Substrates International conference
R. Suryana, O. Nakatsuka, and S. Zaima
Advanced Metallization Conference 2010: 20th Asian Session (ADMETA 2010)
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Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction International conference
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
Advanced Metallization Conference 2010: 20th Asian Session (ADMETA 2010)
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Control of Strain Relaxation Behavior of Ge1-xSnx Layers for Tensile Strained Ge Layers International conference
Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
218th ECS Meeting
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Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices International conference
S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima
218th ECS Meeting
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Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy International conference
M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima
2010 International Conference on Solid State Devices and Materials (SSDM 2010)
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Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition International conference
K. Furuta, W. Takeuchi, M. Sakashita, K. Kato, H. Kondo, O. Nakatsuka, and S. Zaima
2010 International Conference on Solid State Devices and Materials (SSDM 2010)
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Growth and Characterization of GeSn and Tensile-Strained Ge Layers for High Mobility Channels of CMOS Devices International conference
O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima
The 7th Pacific Rim International Conference on Advanced Materials and Processing
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Microscopic structure of directly bonded silicon substrates
T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, and S. Kimura
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Strained Ge and Ge1-xSnx technology for future CMOS devices
S. Zaima, O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, H. Kondo, and M. Sakashita
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Formation of Ge1-xSnx heteroepitaxial layers with high Sn content International conference
Y. Shimura, S. Takeuchi, O. Nakatsuka, A. Sakai, and S. Zaima
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)