Presentations -
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Growth of Two Inch Si0.5Ge0.5 Bulk Single Crystals International conference
K. Kinoshita, Y. Arai, O. Nakatsuka, K. Taguchi, H. Tomioka, R. Tanaka and S. Yoda
2014 International Conference on Solid State Devices and Materials (SSDM 2014)
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Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers International conference
T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima
2014 International Conference on Solid State Devices and Materials (SSDM 2014)
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Mobility behavior of Si1-x-yGexSny polycrystals grown on insulators International conference
T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)
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Transformation of Defects Structure in Germanium by Sn Ion Implantation International conference
W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)
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Crystalline Growth and Characterization of Group-IV Ternary Alloy Thin Films for Solar Cell International conference
T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
Grand Renewable Energy 2014 International Conference and Exhibition
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Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers International conference
M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Impact of Sn incorporation on low temperature growth of polycrystalline-Si1-xGex layers on insulators International conference
T. Yamaha, T. Ohmura, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Epitaxial growth and crystalline properties of Ge1-x-ySixSny Layers on Ge(001) Substrates International conference
T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Crystal growth of Sn-related group-IV alloy thin films for advanced silicon nanoelectronics International conference
S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, and W. Takauchi
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Growth and crystalline properties of Ge1-x-ySnxCy ternary alloy thin films on Ge(001) substrate International conference
K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, and S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Impact of crystalline structure on electrical property of NiGe/Ge contact International conference
Y. Deng, O. Nakatsuka, N. Taoka, S. Zaima
International SiGe Technology and Device Meeting 2014 (ISTDM 2014)
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Formation and Electrical Properties of Metal/Ge1-xSnx Contacts International conference
O. Nakatsuka, T. Nishimura, A. Suzuki, K. Kato, Y. Deng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima
14th International Workshop on Junction Technology (IWJT 2014)
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Strain Distributions at Edge of Corner in Bonded Si in Chip-on-Wafer Structures International conference
N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima
Materials for Advanced metallization (MAM 2014)
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Formation and Electrical Property of Epitaxial NiGe/Ge(110) Schottky Contacts International conference
Y. Deng, O. Nakatsuka, N. Taoka and S. Zaima
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
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Sn-assisted low temperature crystallization of polycrystalline Ge1-xSnx thin-films on insulating surfaces International conference
M. Kurosawa, T. Yamaha, W. Takeuchi, N. Taoka, O. Nakatsuka, H. Ikenoue, and S. Zaima
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
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Substrate Orientation Dependence of Crystalline Structures of Epitaxial GeSn Layers International conference
T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka and S. Zaima
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
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Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method and Fabrication of Strained Ge Layer International conference
T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda and S. Zaima
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
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Sn-related Group-IV semiconductor materials for electronic and optoelectronic applications International conference
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
3rd international Conference on Nanotek and Expo (Nanotek-2013)
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Development of Ge1-xSn and Ge1-x-ySixSny thin film materials for future electronic applications International conference
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
8th International Conference on Processing & Manufacturing of Advanced Materials (THERMEC' 2013)
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Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density International conference
S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima
2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF 2013)