Presentations -
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Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices Invited International conference
O. Nakatsuka, M. Kurosawa, S. Shibayama, and M. Sakashita, S. Zaima
The 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
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Ferroelectric Phase Evolution of Undoped ZrO2 Thin Film by Wet O2 Annealing Process International conference
S. Shibayama, J. Nagano, M. Sakashita, O. Nakatsuka
2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF2019)
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Saturation of Activated Sb Atom in Heavily Sb-Doped Ge Epitaxial Thin Films International conference
J. Jeon, S. Shibayama, S. Zaima, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Thermoelectric properties of silicon germanium wires with a composition gradient International conference
M. Nakata, O. Nakatsuka, M. Tomita, T. Watanabe, and M. Kurosawa
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Theoretical Investigation of Self-organization Behavior of Si0.5Sn0.5 Nano-particles International conference
Y. Nagae, M. Kurosawa, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface International conference
T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Optoelectronic Property of GeSn and GeSiSn Heterostructure International conference
M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Improvement of thermoelectric properties of Si1-x-yGexSny thin films by ion implantation and rapid thermal annealing International conference
Y. Peng, L. Miao, M. Kurosawa, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Model development of MOCVD growth for realizing high-Sn-content Ge1-xSnx epitaxial layer ~ What physical properties are required for precursors? ~ International conference
Y. Miki, S. Shibayama, S. Zaima, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)
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Saturation of Sb1+ Concentration in Heavily Sb-doped n+-Ge Epitaxial Layers International conference
J. Jeon, S. Shibayama, and O. Nakatsuka
Advanced Metallization Conference 2019: 29th Asian Session (ADMETA Plus 2019)
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Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si1-xSnx Layers Grown on Insulators International conference
K. Sato, O. Nakatsuka, and M. Kurosawa
2019 International Conference on Solid State Devices and Materials (SSDM 2019)
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Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET International conference
W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, and O. Nakatsuka
2019 International Conference on Solid State Devices and Materials (SSDM 2019)
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In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks International conference
T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
2019 International Conference on Solid State Devices and Materials (SSDM 2019)
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Strain Relaxation Enhancement of Ge1-x-ySixSny Epitaxial Layer on Ge Substrate Using Ion-Implantation Method International conference
H. Sofue, M. Fukuda, S. Shibayama, S. Zaima, and O. Nakatsuka
2019 International Conference on Solid State Devices and Materials (SSDM 2019)
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Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiCxOy Interlayer International conference
K. Hashimoto, T. Doi, S. Shibayama, and O. Nakatsuka
2019 International Conference on Solid State Devices and Materials (SSDM 2019)
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GeSn and GeSiSn Heterostructures for Optoelectronic Applications Invited International conference
O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima
2019 IEEE Photonics Society Summer Topicals Meeting Series
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Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 International conference
K. Senga, S. Shibayama, M. Sakashita, S. Zaima, and O. Nakatsuka
19th International Workshop on Junction Technology 2019 (IWJT2019)
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Development and challenges of group-IV alloy semiconductors for nanoelectronic applications Invited International conference
S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama
The Eleventh International Conference on High-Performance Ceramics (CICC-11)
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Tin-incorporation effect on thermoelectric properties of p-type polycrystalline Si1-xGex layers grown on SiO2 International conference
Y. Peng, L. Miao, J. Gao, M. Kurosawa, O. Nakatsuka, and S. Zaima
The Eleventh International Conference on High-Performance Ceramics (CICC-11)
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Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny QuantumWell Structures International conference
G. R. Suwito, M. Fukuda, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima
Compoud Semiconductor Week 2019 (CSW 2019)