Presentations -
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Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer International conference
H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima
International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
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Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate International conference
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
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Epitaxial Growth of Ge1-xSnx Layers on (110)-oriented Si and Ge Substrates International conference
T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
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Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications International conference
O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima
University of Vigo and JSPS Core-to-Core Program Joint Seminar
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Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures International conference
Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
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Potential of GeSn Alloys for Application to Si Nanoelectronics International conference
S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, and O. Nakatsuka
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
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Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures International conference
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
CNSE and JSPS Core-to-Core Program Joint Seminar
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GeSn Alloy for Nanoelectronic and Optoelectronic Devices International conference
O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka and S. Zaima
CNSE and JSPS Core-to-Core Program Joint Seminar
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Epitaxial Growth and Characterization of GeSn Layers on Ge(110) and Si(110) Substrates International conference
T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka, S. Zaima
CNSE and JSPS Core-to-Core Program Joint Seminar
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Epitaxial Growth and Anisotropic Strain Relaxation of Ge1-xSnx Layers on Ge(110) Substrates International conference
T. Asano, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy International conference
B. Baert, D. Y. N. Truong, O. Nakatsuka, S. Zaima, and N. D. Nguyen
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Material properties and applications of Ge1-xSnx alloys for Ge Nanoelectronics International conference
O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents International conference
M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure International conference
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Comprehensive Study of Local Strain Structures with High Strain Resolution for Through-Silicon Via Interconnects International conference
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
12th International Workshop on Stress-Induced Phenomena in Metallization
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Periodic Strain Undulation around Through Si Vias in Wafer-On-Wafer Structures International conference
N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba and S. Zaima
Materials for Advanced Metallization 2013 (MAM 2013)
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A comparative study of metal germanide formation on Ge1-xSnx International conference
J. Demeulemeester, A. Schrauwen, K. Van Stiphout, O. Nakatsuka, M. Adachi, Y. Shimura, S. Zaima, C. M. Comrie, C. Detavernier, K. Temst, and A. Vantommea
Materials for Advanced Metallization 2013 (MAM 2013)
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Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits International conference
N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Crystalline Properties of Ge1-xSnx Epitaxial Layers on Ge(110) International conference
T. Asano, M. Kurosawa, N. Taoka, O. Nakatsuka and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Control of Interfacial Reactions in Al2O3/Ge Structures International conference
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar