Presentations -
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Systematic Characterization of Ni Full Silicide in Sub-100 nm Gate Regions International conference
D. Ito, A. Sakai, O. Nakatsuka, H. Kondo, Y. Akasaka, M. Ogawa, and S. Zaima
2006 MRS Spring Meeting
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エピタキシャルAgテンプレート層上における触媒金属CVD法に よるカーボンナノチューブ成長
種田智，酒井朗，中塚理，小川正毅，財満鎭明
第5回日本表面科学会中部支部学術講演会
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Sub-100 nmゲート領域におけるNiシリサイド形成反応の観察
伊東大介，酒井朗，中塚理，近藤博基，赤坂泰志，奈良安雄，小川正毅，財満鎭明
第53回応用物理学関係連合講演会
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エピタキシャルAg/Si(111)上における触媒金属CVD法によるカーボンナノチューブ成長
種田智，酒井朗，中塚理，小川正毅，財満鎭明
第53回応用物理学関係連合講演会
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仮想Ge(001)基板上における歪緩和Ge1-xSnxバッファ層の成長と構造評価
竹内正太郎，酒井朗，山本幸司，中塚理，小川正毅，財満鎭明
第53回応用物理学関係連合講演会
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極薄Ge中間層を用いた歪緩和Ge/Si(001)界面の転位構造制御
湯川勝規，望月省吾，中塚理，酒井朗，竹田晋吾，木村滋，坂田修身，隅谷和嗣，泉妻宏治，仙田剛士，豊田英二，小川正毅，財満鎭明
第53回応用物理学関係連合講演会
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Si(001)基板上にパターン加工されたGeおよびSiGe層の歪緩和評価と制御
望月省吾，湯川勝規，中塚理，近藤博基，酒井朗，泉妻宏治，仙田剛士，豊田英二，小川正毅，財満鎭明
第53回応用物理学関係連合講演会
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Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(001) system International conference
O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima
Materials for Advanced Metallization Conference 2006
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Epitaxial NiSi2 layers with extremely flat interfaces in Ni/Ti/Si(001) system International conference
A. Suzuki, K. Okubo, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
Advanced Metallization Conference 2005: 15th Asian Session
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Dislocation and strain engineering for SiGe buffer layers on Si International conference
A. Sakai, S. Mochizuki, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima
Symposium on Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing IV (joint with 35th European Solid State Device Research Conference)
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Ni/Ti/Si(001)系におけるエピタキシャルNiSi2超平坦界面の低温形成
鈴木敦之、大久保和哉、中塚理、酒井朗、小川正毅、財満鎭明
第66回応用物理学会学術講演会
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Impact of C implantation on electrical properties of NiSi/Si contact International conference
O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, and S. Zaima
The 5th International Workshop on Junction Technology
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Surface structures in the initial growth of epitaxial Si1-x-yGexCy layers in SiGe and C alternate deposition International conference
S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima
First International WorkShop on New Group IV Semiconductor Nanoelectronics
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Control of Solid-Phase Reaction and Electrical Properties of Ni silicide/Si Contacts by Ge and C Incorporation International conference
O. Nakatsuka, K. Okubo, A. Sakai, J. Murota, Y. Yasuda, M. Ogawa, and S. Zaima
First International WorkShop on New Group IV Semiconductor Nanoelectronics
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Hard X-Ray Photoelectron Spectroscopy for HfON/SiN/Si System International conference
O. Nakatsuka, R. Takahishi, M. Sakashita, E. Ikenaga, K. Kobayashi, H. Nohira, T. Hattori, A. Sakai, M. Ogawa, and S. Zaima
Fourth International Conference on Silicon Epitaxy and Heterostructures
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Cイオン注入を用いたNiSi界面固相反応制御
中塚理、大久保和哉、酒井朗、小川正毅、安田幸夫、財満鎭明
第4回・日本表面科学会中部支部学術講演会
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Improvement on NiSi/Si contact properties with C-implantation International conference
S. Zaima, O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, and Y. Yasuda
Materials for Advanced Metallization Conference 2005
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Transmission electron microscopy analysis of dislocation structures in the strain-relaxed SiGe films on Si and silicon-on-insulator substrates International conference
N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, and Y. Yasuda
International Symposium on Characterization of Real Materials and Real Processing by Transmission Electron Microscopy
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Control of initial growth of epitaxial NiSi2 on Si(001) with C incorporation International conference
O. Nakatsuka, E. Okada, D. Ito, A. Sakai, S.Zaima, M. Ogawa, and Y. Yasuda,
Third International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Application to Ultrahigh Speed and Opto-Electronic Devices,
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Thermal stability and electrical properties of Ni-silicide on C-incorporation International conference
", O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima, J. Murota, and Y. Yasuda,
Advanced Metallization Conference 2004: Asian Session