Presentations -
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Formation of Strain-relaxed Ge1-x-ySixSny Epitaxial Layer using Ionimplanted Ge Substrate International conference
H. Sofue, M. Fukuda, S. Shibayama, O. Nakatsuka, and S. Zaima
11th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 12th International Conference on Plasma-Nano Technology and Science (ISPlasma 2019 / IC-PLANTS 2019)
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GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications Invited International conference
O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima
12th International WorkShop on New Group IV Semiconductor Nanoelectronics
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Formation of Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure with Ultra-Low Contact Resistivity International conference
J. Jeon, A. Suzuki, S. Shibayama, O. Nakatsuka, and S. Zaima
12th International WorkShop on New Group IV Semiconductor Nanoelectronics
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Study of factors to limit increasing Sn content in Ge1-xSnx for MOCVD method International conference
Y. Miki, W. Takeuchi, S. Shibayama, O. Nakatsuka, and S. Zaima
12th International WorkShop on New Group IV Semiconductor Nanoelectronics
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Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure International conference
M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
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Thermoelectric Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Layer Prepared with Ion Implantation International conference
Y. Peng, M. Kurosawa, O. Nakatsuka, L. Miao, J. Gao, and S. Zaima
14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
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Impact of Crystalline Property of SixGe1-x-ySny Ternary Alloy Interlayer on Schottky Barrier Height Engineering of Metal/Ge Contact International conference
O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima
Advanced Metallization Conference 2018: 28th Asian Session (ADMETA Plus 2018)
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Composition and Strain Engineering of New Group-IV Thermoelectric Materials Invited International conference
M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
AiMES 2018 Meeting
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Formation of laterally graded SixGe1-x stripes for thermoelectric generator International conference
M. Nakata, K. Takahashi, T. Nishijima, S. Shimizu, I. Tsunoda, O. Nakatsuka, S. Zaima, T. Watanabe, and M. Kurosawa
The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)
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Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films Invited International conference
O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
2018 International Conference on Solid State Devices and Materials (SSDM 2018)
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Impact of Oxygen Radical Treatment on Improvement of Al2O3/SiC Interface International conference
T. Doi, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
2018 International Conference on Solid State Devices and Materials (SSDM 2018)
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Thin Film Growth and Characterization of Group-IV Alloy Semiconductors for Future Nanoelectronic Applications Invited International conference
O. Nakatsuka, M. Kurosawa, and S. Zaima
The 9th International Conference on Physics and Its Applications (ICOPIA)
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Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films Invited International conference
O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima
IEEE Photonics Society Summer Topical Meeting Series 2018
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Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications Invited International conference
O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
European Materials Research Society (2018 E-MRS Spring Meeting)
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GeSn-based thin film thermoelectric generators Invited International conference
M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018)
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Formation of Ultra-Low Resistance Contact with Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure International conference
J. Jihee, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
1st Joint Conference ICSI / ISTDM 2018
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Ultra-thin GeSn on Insulator structure through the direct bonding technique International conference
T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida
1st Joint Conference ICSI / ISTDM 2018
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Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer International conference
M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
1st Joint Conference ICSI / ISTDM 2018
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Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates International conference
Y. Imai, K. Takahashi, N. Uchida, T. Maeda, O. Nakatsuka, S. Zaima, and M. Kurosawa
The 2nd Electron Devices Technology and Manufacturing (EDTM 2018)
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Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator International conference
K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
The 2nd Electron Devices Technology and Manufacturing (EDTM 2018)