論文 - 宇佐美 徳隆
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In situ observations of crystal growth behavior of silicon melt
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa and S. Mizoguchi
Journal of Crystal Growth 243 巻 ( 2 ) 頁： 275-282 2002年8月
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Evidence of the presence of built-in strain in multicrystalline SiGe with large compositional distribution
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 41 巻 ( 7A ) 頁： 4462-4465 2002年7月
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Simultaneous in situ measurement of solute and temperature distributions in the alloy solutions
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
Journal of Crystal Growth 242 巻 頁： 313-320 2002年7月
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Preparation of a TiO2 film coated Si device for photo-decomposition of water by CVD method using Ti(OPri)(4)
N. Sato, K. Nakajima, N. Usami, H. Takahashi, A. Muramatsu and E. Matsubara
Materials Transactions 43 巻 ( 7 ) 頁： 1533-1536 2002年7月
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Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Solar Energy Materials and Solar Cells 73 巻 ( 3 ) 頁： 305-320 2002年7月
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New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
Journal of Crystal Growth 241 巻 ( 3 ) 頁： 387-394 2002年6月
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Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki and T. Shishido
Journal of Crystal Growth 240 巻 頁： 373-381 2002年5月
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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Solar Energy Materials and Solar Cells 72 巻 頁： 93-100 2002年4月
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In-situ monitoring system of the position and temperature at the crystal-solution interface
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami and K. Nakajima
Journal of Crystal Growth 236 巻 頁： 125-131 2002年3月
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Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, H. Yaguchi, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters 41 巻 ( 1AB ) 頁： L37-L39 2002年1月
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In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, K. Fujiwara, N. Usami and K. Nakajima
Journal of Crystal Growth 234 巻 頁： 516-522 2002年1月
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Raman scattering and x-ray absorption studies of Ge-Si nanocrystallization
A. Kolobov, H. Oyanagi, N. Usami, S. Tokumitsu, T. Hattori, S. Yamasaki, K. Tanaka, S. Ohtake and Y. Shiraki
Applied Physics Letters 80 巻 ( 3 ) 頁： 488-490 2002年1月
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Effect of Si diffusion on growth, parameters and photoluminescence of GeSi/Si(001) self-assembled islands
M. Y. Valakh, N. V. Vostokov, S. A. Gusev, Y. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, L. D. Moldavskaya, A. V. Novikov, V. V. Postnikov, M. V. Stepikhova, N. Usami, Y. Shiraki and V. A. Yukhymchuk
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA 66 巻 頁： 161-164 2002年
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Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami and K. Nakajima
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 89 巻 頁： 364-367 2002年
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Evaluation of the diffusion coefficients in liquid GaGe binary alloys using a novel method based on Fick's first law
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima
JOURNAL OF NON-CRYSTALLINE SOLIDS 312 巻 頁： 196-202 2002年
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Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands
A. V. Novikov, B. A. Andreev, N. V. Vostokov, Y. N. Drozdov, Z. F. Krasilnik, D. N. Lobanov, L. D. Moldavskaya, A. N. Yablonskiy, M. Miura, N. Usami, Y. Shiraki, M. Y. Valakh, N. Mestres and J. Pascual
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 89 巻 頁： 62-65 2002年
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Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K. Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa and S. Kodama
Semiconductor Science and Technology 16 巻 ( 8 ) 頁： 699-703 2001年8月
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Physical model for the evaluation of solid-liquid interfacial tension in silicon
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami and K. Nakajima
Journal of Applied Physics 90 巻 ( 2 ) 頁： 750-755 2001年7月
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Fabrication of strain-balanced Si/Si1-xGex multiple quantum wells on Si1-yGey virtual substrates and their optical properties
K. Kawaguchi, Y. Shiraki, N. Usami, J. Zhang, N. J. Woods, G. Breton and G. Parry
Applied Physics Letters 79 巻 ( 3 ) 頁： 344-346 2001年7月
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Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 40 巻 ( 6A ) 頁： 4141-4144 2001年6月