論文 - 宇佐美 徳隆
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Seed manipulation for artificially controlled defect technique in new growth method for quasi-monocrystalline Si ingot based on casting 査読有り
I.Takahashi, S.Joonwichien, T.Iwata, and N.Usami
Applied Physics Express 8 巻 頁： 105501 2015年9月
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Selective growth of vertical silicon nanowire array guided by anodic aluminum oxide template 査読有り
V.H.Nguyen, Y.Hoshi, N.Usami, M.Konagai
Japanese Journal of Applied Physics 54 巻 頁： 095003 2015年8月
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Comparison of phosphorus gettering effect in faceted dendrite and small grain of multicrystalline silicon wafers grown by floating cast method 査読有り
S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami
Japanese Journal of Applied Physics 54 巻 頁： 08KD11 2015年7月
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Application of heterojunction to Si-based solar cells using photonic nanostructures coupled with vertically aligned Ge quantum dots 査読有り
I.Takahashi, Y.Hoshi, T.Tayagaki, T.Oikawa, K.Ohdaira, N.Usami
Japanese Journal of Applied Physics 54 巻 頁： 08KA06 2015年7月
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Fabrication of single-phase BaSi2 thin films on silicon substrates by vacuumevaporation for solar cell applications 査読有り
Y.Nakagawa, K.O.Hara, T.Suemasu, N.Usami
Japanese Journal of Applied Physics 54 巻 頁： 08KC03 2015年7月
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Effect of Anodization Process of Aluminum Oxide Template on Selective Growth of Si Nanowires 査読有り
V.H.Nguyen, S.Tutashkonko, Y.Hoshi, N.Usami
Japanese Journal of Applied Physics 54 巻 頁： 08KA02 2015年6月
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Geometry in Si-based photonic nanostructures coupled with Ge quantum dot multilayers and its impact on optical properties 査読有り
O.Aonuma, Y.Hoshi, T.Tayagaki, A.Novikov, D.Yurasov, N.Usami
Japanese Journal of Applied Physics 54 巻 頁： 08KA01 2015年6月
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Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy 査読有り
K.Shojiki, J-H.Choi, T.Iwabuchi, N.Usami, T.Tanikawa, S.Kuboya, T.Hanada, R.Katayama, T.Matsuoka
Applied Physics Letters 106 巻 頁： 222102 2015年6月
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Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot
I.Takahashi, S.Joonwichien, S.Matsushima, N.Usami
Journal of Applied Physics ( 117 ) 頁： 095701 2015年3月
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Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications 査読有り
K.O.Hara, Y.Nakagawa, T.Suemasu, N.Usami
Japanese Journal of Applied Physics 54 巻 頁： 07JE02 2015年3月
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Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy
D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu
Japanese Journal of Applied Physics 54 巻 ( 3 ) 頁： 030306 2015年3月
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Cross-sectional potential profile across a BaSi2 pn junction by Kelvin probe force microscopy 査読有り
D.Tsukahara, M.Baba, K.Watanabe, T.Kimura, K.O.Hara, W.Du, N.Usami, K.Toko, T.Sekiguchi, T.Suemasu
Japanese Journal of Applied Physics 54 巻 頁： 030306 2015年2月
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Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures
T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami
Japanese Journal of Applied Physics ( 54 ) 頁： 04DR03 2015年1月
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Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization 査読有り
K.Toko, M.Nakata, A.Okada, M.Sasase, N.Usami, T.Suemasu
INTERNATIONAL JOURNAL OF PHOTOENERGY ( 2015 ) 頁： 790242 2015年1月
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バルク結晶成長のこの10年 査読有り
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
42 巻 ( 1 ) 頁： pp.64-68 2015年
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Light trapping by direction-dependent light transmission in front-surface photonic nanostructures
T.Tayagaki, Y.Kishimoto, Y.Hoshi, N.Usami
Applied Physics Express 7 巻 頁： 122301 2014年11月
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Simulation study of Ge/Si heterostructured solar cells yielding improved open-circuit voltage and quantum efficiency
T.Tayagaki, Y.Kishimoto, Y.Hoshi, I.Takahashi, N.Usami
Japanese Journal of Applied Physics ( 53 ) 頁： 110312 2014年10月
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Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy
D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu
D.Tsukahara, M.Baba, S.Honda, Y.Imai, K.O.Hara, N.Usami, K.Toko, J.H.Werner, T.Suemasu 116 巻 頁： 123709 2014年9月
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Towards implementation of floating cast method for growing large-scale high-quality multicrystalline silicon ingot using designed double crucibles
S.Joonwichien, I.Takahashi, S.Matsushima, N.Usami
PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS ( 22 ) 頁： 726-732 2014年7月
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Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique
M.Baba, K.Watanabe, K.O.Hara, K.Toko, T.Sekiguchi, N.Usami, T.Suemasu
Japanese Journal of Applied Physics ( 53 ) 頁： 078004 2014年6月