論文 - 宇佐美 徳隆
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Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate
S. Sanorpim, R. Katayama, K. Onabe, N. Usami and K. Nakajima
Japanese Journal of Applied Physics 49 巻 ( 4 ) 2010年
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Fabrication of n(+)-BaSi2/p(+)-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
T. Saito, Y. Matsumoto, M. Suzuno, M. Takeishi, R. Sasaki, T. Suemasu and N. Usami
Applied Physics Express 3 巻 ( 2 ) 2010年
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Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells
Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito, T. Suemasu, N. Usami and M. Sasase
Japanese Journal of Applied Physics 49 巻 2010年
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On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
M. Jung, A. Okada, T. Saito, T. Suemasu and N. Usami
Applied Physics Express 3 巻 ( 9 ) 2010年
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Growth behavior of faceted Si crystals at grain boundary formation
K. Fujiwara, S. Tsumura, M. Tokairin, K. Kutsukake, N. Usami, S. Uda and K. Nakajima
Journal of Crystal Growth 312 巻 ( 1 ) 頁： 19-23 2009年12月
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Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth
M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami and K. Nakajima
Physical Review B 80 巻 ( 17 ) 2009年11月
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Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
R. Nihei, N. Usami and K. Nakajima
Japanese Journal of Applied Physics 48 巻 ( 11 ) 2009年11月
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Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Solid-State Electronics 53 巻 ( 10 ) 頁： 1135-1143 2009年10月
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Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures
K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Letters 95 巻 2009年9月
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Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application
D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu
Journal of Crystal Growth 311 巻 ( 14 ) 頁： 3581-3586 2009年7月
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Microstructures of Si multicrystals and their impact on minority carrier diffusion length
H. Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake and K. Nakajima
Acta Materialia 57 巻 ( 11 ) 頁： 3268-3276 2009年6月
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Photoresponse Properties of Polycrystalline BaSi2 Films Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami and T. Suemasu
Applied Physics Express 2 巻 ( 5 ) 2009年5月
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Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots
J. Xia, R. Tominaga, S. Fukamitsu, N. Usami and Y. Shiraki
Japanese Journal of Applied Physics 48 巻 ( 2 ) 2009年2月
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Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance
K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara and K. Nakajima
Journal of Applied Physics 105 巻 ( 4 ) 2009年2月
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Floating cast method to realize high-quality Si bulk multicrystals for solar cells
Y. Nose, I. Takahashi, W. Pan, N. Usami, K. Fujiwara and K. Nakajima
Journal of Crystal Growth 311 巻 ( 2 ) 頁： 228-231 2009年1月
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Resonant photoluminescence from Ge self-assembled dots in optical microcavities
J. S. Xia, R. Tominaga, N. Usami, S. Iwamoto, Y. Ikegami, K. Nemoto, Y. Arakawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH 311 巻 頁： 883-887 2009年
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Local control of strain in SiGe by ion-implantation technique
K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH 311 巻 ( 3 ) 頁： 806-808 2009年
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Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method
Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki
JOURNAL OF CRYSTAL GROWTH 311 巻 ( 3 ) 頁： 825-828 2009年
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Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates
K. Arimoto, G. Kawaguchi, K. Shimizu, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki
J. Cryst. Growth 311 巻 頁： 814-818 2009年
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Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
J. Cryst. Growth 311 巻 頁： 809-813 2009年