論文 - 宇佐美 徳隆
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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
W.D, M.Baba, K.Toko, K.Kosuke, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu
Journal of Applied Physics 115 巻 頁： 223701 2014年6月
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Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
W.Du, M.Baba, K.Toko, K.O.Hara, K.Watanabe, T.Sekiguchi, N.Usami, T.Suemasu
Journal of Applied Physics 115 巻 頁： 223701 2014年6月
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Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111) 査読有り
R.Takabe, K.O.Hara, M.Baba, W.Du, N.Shimada, K.Toko, N.Usami, T.Suemasu
( 115 ) 頁： 193510 2014年5月
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Carrier extraction dynamics from Ge/Si quantum wells in Si solar cells
T.Tayagaki, Y.Hoshi, K.Ooi, T.Kiguchi, N.Usami
Thin Solid Films 557 巻 頁： 368-371 2014年4月
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Control of geometry in Si-based photonic nanostructures formed by maskless wet etching process and its impact on optical properties
Y.Hoshi, T.Tayagaki, T.Kiguchi, N.Usami
Thin Solid Films 557 巻 頁： 338-341 2014年4月
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Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer
R.Numata, K.Toko, K.Nakazawa, N.Usami, T.Suemasu
Thin Solid Films 557 巻 頁： 143-146 2014年4月
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Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange
R.Numata, K.Toko, N.Usami, T.Suemasu
Thin Solid Films 557 巻 頁： 147-150 2014年4月
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N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing
K.O.Hara, Y.Hoshi, N.Usami, Y.Shiraki, K.Nakamura, K.Toko, T.Suemasu
Thin Solid Films 557 巻 頁： 90-93 2014年4月
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Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange
K.Toko, R.Numata, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
Journal of Applied Physics 115 巻 ( 9 ) 頁： 094301 2014年3月
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Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method
K.Nakajima, K.Morishita, R.Murai, N.Usami
Journal of Crystal Growth 389 巻 頁： 112-119 2014年3月
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Orientation control of Ge thin films by underlayer-selected Al-induced crystallization
K.Toko, K.Nakazawa, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
CrystEngComm 16 巻 ( 13 ) 頁： 2578-2583 2014年2月
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Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange
R.Numata, K.Toko, N.Oya, N.Usami and T.Suemasu
Japanese Journal of Applied Physics 53 巻 頁： 04EH03 2014年2月
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Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates
K.Nakazawa, K.Toko, N.Usami, T.Suemasu
Japanese Journal of Applied Physics 53 巻 頁： 04EH01 2014年2月
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Fabrication and characterization of BaSi2 epitaxial films over 1 mu m in thickness on Si(111) 査読有り
R.Takabe, K.Nakamura, M.Baba, W.Du, M.A.Khan, K.Toko, M.Sasase, K.Hara, N.Usami, T.Suemasu
Japanese Journal of Applied Physics 53 巻 頁： 04ER04 2014年2月
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Enhanced photocarrier generation in large-scale photonic nanostructures fabricated from vertically aligned quantum dots
T.Tayagaki, Y.Hoshi, Y.Kishimoto, and N.Usami
Optics Express 22 巻 ( 52 ) 頁： A225-A232 2014年1月
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Low-temperature (180 degrees C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization
K.Toko, R.Numata, N.Oya, N.Fukata, N.Usami, T.Suemasu
Applied Physics Letters 104 巻 ( 2 ) 頁： 022106 2014年1月
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Grazing-incidence small-angle X-ray scattering from Ge nanodots self-organized on Si(001) examined with soft X-rays
T.Yamamoto, H.Okuda, K.Takeshita, N.Usami, Y.Kitajima, H.Ogawa
Journal of Synchrotron Radiation 21 巻 頁： 161-164 2014年1月
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Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains
K.kutsukake, N.Usami, Y.Ohno,Y.Tokumoto, I.Yonenaga
Ieee Journal of Photovoltaics 4 巻 ( 1 ) 頁： 84-87 2014年1月
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Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates
K.Nakazawa, K.Toko, N.Saitoh, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © 10 巻 頁： 1781-1784 2013年12月
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Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates
M.Baba, K.O.Hara, K.Toko, N.Saito, N.Yoshizawa, N.Usami, T.Suemasu
physica status solidi © 10 巻 頁： 1756-1768 2013年12月