論文 - 宇佐美 徳隆
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Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, N. Usami, K. Nakajima, K. Sawano and Y. Shiraki
J. Cryst. Growth 311 巻 頁： 819-824 2009年
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Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt
Z. M. Wang, K. Kutsukake, H. Kodama, N. Usami, K. Fujiwara, Y. Nose and K. Nakajima
Journal of Crystal Growth 310 巻 ( 24 ) 頁： 5248-5251 2008年12月
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Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutuskake, K. Fuilwara and K. Nakajima
Japanese Journal of Applied Physics 47 巻 ( 12 ) 頁： 8790-8792 2008年12月
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Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
K. Sawano, Y. Hoshi, A. Yamada, Y. Hiraoka, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Applied Physics Express 1 巻 ( 12 ) 2008年12月
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Room-temperature light-emission from Ge quantum dots in photonic crystals
J. Xia, K. Nemoto, Y. Ikegami, N. Usami, Y. Nakata and Y. Shiraki
Thin Solid Films 517 巻 ( 1 ) 頁： 125-127 2008年11月
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Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials
N. Usami, R. Nihei, Y. Azuma, I. Yonenaga, K. Nakajima, K. Sawano and Y. Shiraki
Thin Solid Films 517 巻 ( 1 ) 頁： 14-16 2008年11月
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Characterizations of polycrystalline SiGe films on SiO2 grown by gas-source molecular beam deposition
M. Mitsui, M. Tamoto, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Sato, N. Usami, K. Sawano and Y. Shiraki
Thin Solid Films 517 巻 ( 1 ) 頁： 254-256 2008年11月
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Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer
K. Arimoto, M. Watanabe, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Thin Solid Films 517 巻 ( 1 ) 頁： 235-238 2008年11月
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Vacancy formation during oxidation of silicon crystal surface
M. Suezawa, Y. Yamamoto, M. Suemitsu, N. Usami and I. Yonenaga
Applied Physics Letters 93 巻 ( 10 ) 2008年9月
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Development of thin SiGe relaxed layers with high-Ge composition by ion implantation method and application to strained Ge channels
Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Satoh, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa and Y. Shiraki
Applied Physics Express 1 巻 ( 8 ) 2008年8月
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Growth mechanism of Si-faceted dendrites
K. Fujiwara, K. Maeda, N. Usami and K. Nakajima
Physical Review Letters 101 巻 ( 5 ) 2008年8月
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Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals
N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga and K. Nakajima
Applied Physics Express 1 巻 ( 7 ) 2008年7月
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Acceptorlike behavior of defects in SiGe alloys grown by molecular beam epitaxy
M. Satoh, K. Arimoto, K. Nakagawa, S. Koh, K. Sawano, Y. Shiraki, N. Usami and K. Nakajima
Japanese Journal of Applied Physics 47 巻 ( 6 ) 頁： 4630-4633 2008年6月
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In situ observation of Si faceted dendrite growth from low-degree-of-undercooling melts
K. Fujiwara, K. Maeda, N. Usami, G. Sazaki, Y. Nose, A. Nomura, T. Shishido and K. Nakajima
Acta Materialia 56 巻 ( 11 ) 頁： 2663-2668 2008年6月
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On effects of gate bias on hole effective mass and mobility in strained-Ge channel structures
K. Sawano, Y. Kunishi, Y. Satoh, K. Toyama, K. Arimoto, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
Applied Physics Express 1 巻 ( 1 ) 2008年1月
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Hole density and strain dependencies of hole effective mass in compressively strained Ge channel structures
K. Sawano, Y. Kunishi, K. Toyama, T. Okamoto, N. Usami, K. Nakagawa and Y. Shiraki
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 40 巻 ( 6 ) 頁： 2122-2124 2008年
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Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films
K. Ohdaira, Y. Abe, M. Fukuda, S. Nishizaki, N. Usami, K. Nakajima, T. Karasawa, T. Torikai and H. Matsumura
THIN SOLID FILMS 516 巻 ( 5 ) 頁： 600-603 2008年
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Functional enhancement of metal-semiconductor-metal infrared photodetectors on heteroepitaxial SiGe-on-Si using the anodic oxidation/passivation method
R. W. Chuang, Z. L. Liao, H. T. Chiang and N. Usami
Jpn. J. Appl. Phys. 47 巻 頁： 2927-2931 2008年
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Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis
N. Usami, K. Kutsukake, K. Fujiwara and K. Nakajima
Journal of Applied Physics 102 巻 ( 10 ) 2007年11月
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High-quality polycrystalline silicon films with minority carrier lifetimes over 5 mu s formed by flash lamp annealing of precursor amorphous silicon films prepared by catalytic chemical vapor deposition
K. Ohdaira, S. Nishizaki, Y. Endo, T. Fujiwara, N. Usami, K. Nakajima and H. Matsumura
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 46 巻 ( 11 ) 頁： 7198-7203 2007年11月