論文 - 宇佐美 徳隆
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Intermixing of Ge and Si during exposure of GeH4 on Si
G. Watari, N. Usami, Y. Nose, K. Fujiwara, G. Sazaki and K. Nakajima
THIN SOLID FILMS 508 巻 頁： 163-165 2006年
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Strain field and related roughness formation in SiGe relaxed buffer layers
K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
THIN SOLID FILMS 508 巻 ( 1-2 ) 頁： 117-119 2006年
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Influence of stacked Ge islands on the dark current-voltage characteristics and the conversion efficiency of the solar cells
A. Alguno, N. Usami, K. Ohdaira, W. G. Pan, M. Tayanagi and K. Nakajima
Thin Solid Films 508 巻 頁： 402-405 2006年
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Determination of lattice parameters of SiGe/Si(110) heterostructures
K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki, S. Koh and N. Usami
Thin Solid Films 508 巻 頁： 132-135 2006年
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Directional growth method to obtain high quality polycrystalline silicon from its melt
K. Fujiwara, W. Pan, K. Sawada, M. Tokairin, N. Usami, Y. Nose, A. Nomura, T. Shishido and K. Nakajima
J. Cryst. Growth 292 巻 頁： 282-285 2006年
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Thickness dependence of strain field distribution in SiGe relaxed buffer layers
K. Sawano, N. Usami, K. Arimoto, K. Nakagawa and Y. Shiraki
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 巻 頁： 8445-8447 2005年12月
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Analysis of the dark-current density in solar cells based on multicrystalline SiGe
K. Ohdaira, N. Usami, W. G. Pan, K. Fujiwara and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 巻 ( 11 ) 頁： 8019-8022 2005年11月
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Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition
N. Usami, M. Kitamura, K. Obara, Y. Nose, T. Shishido and K. Nakajima
Journal of Crystal Growth 284 巻 頁： 57-64 2005年10月
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Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima and T. Ujihara
Journal of Applied Physics 98 巻 ( 7 ) 2005年10月
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Changes in elastic deformation of strained si by microfabrication (vol 8, pg 181, 2005)
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami
Materials Science in Semiconductor Processing 8 巻 ( 6 ) 頁： 652-652 2005年10月
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Liquid phase epitaxial growth of Si layers on Si thin substrates from Si pure melts under near-equilibrium conditions
K. Nakajima, K. Fujiwara, Y. Nose and N. Usami
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 巻 ( 7A ) 頁： 5092-5095 2005年7月
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Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique
M. Kitamura, N. Usami, T. Sugawara, K. Kutsukake, K. Fujiwara, Y. Nose, T. Shishido and K. Nakajima
Journal of Crystal Growth 280 巻 頁： 419-424 2005年7月
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Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
Thin Solid Films 476 巻 ( 1 ) 頁： 206-209 2005年4月
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A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal
Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara and K. Nakajima
Journal of Crystal Growth 276 巻 頁： 393-400 2005年4月
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Structural properties of directionally grown polycrystalline SiGe for solar cells
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima
Journal of Crystal Growth 275 巻 頁： 467-473 2005年3月
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On the origin of improved conversion efficiency of solar cells based on SiGe with compositional distribution
N. Usami, K. Fujiwara, W. G. Pan and K. Nakajima
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers 44 巻 ( 2 ) 頁： 857-860 2005年2月
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Growth of ZnO/MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect
B. P. Zhang, N. T. Binh, K. Wakatsuki, C. Y. Liu and Y. Segawa and N. Usami
Applied Physics Letters 86 巻 ( 3 ) 2005年1月
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Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
Journal of Crystal Growth 273 巻 頁： 594-602 2005年1月
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Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration
N. Usami, M. Kitamura, T. Sugawara, K. Kutsukake, K. Ohdaira, Y. Nose, K. Fujiwara, T. Shishido and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters & Express Letters 44 巻 ( 24-27 ) 頁： L778-L780 2005年
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Observation of strain field fluctuation in SiGe-relaxed buffer layers and its influence on overgrown structures
K. Sawano, N. Usami, K. Arimoto, S. Koh, K. Nakagawa and Y. Shiraki
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 8 巻 ( 1-3 ) 頁： 177-180 2005年