論文 - 宇佐美 徳隆
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Strain-field evaluation of strain-relaxed thin SiGe layers fabricated by ion implantation method
K. Sawano, Y. Ozawa, A. Fukuoto, N. Usami, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and Y. Shiraki
Japanese Journal of Applied Physics Part 2-Letters & Express Letters 44 巻 ( 42-45 ) 頁： L1316-L1319 2005年
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Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki
International Journal of Materials & Product Technology 22 巻 頁： 185-212 2005年
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Changes in elastic deformation of strained Si by microfabrication
K. Arimoto, D. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano, S. Koh, Y. Shiraki and N. Usami
Materials Science in Semiconductor Processing 8 巻 頁： 181-185 2005年
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Low-temperature growth of single-crystalline ZnO tubes on sapphire(0001) substrates
B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa
Applied Physics a-Materials Science & Processing 79 巻 ( 7 ) 頁： 1711-1714 2004年11月
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Fabrication of high-quality strain-relaxed thin SiGe layers on ion-implanted Si substrates
K. Sawano, S. Koh, Y. Shiraki, Y. Ozawa, T. Hattori, J. Yamanaka, K. Suzuki, K. Arimoto, K. Nakagawa and N. Usami
Applied Physics Letters 85 巻 ( 13 ) 頁： 2514-2516 2004年9月
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On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki and K. Nakajima
Applied Physics Letters 85 巻 ( 8 ) 頁： 1335-1337 2004年8月
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Low-temperature growth of ZnO nanostructure networks
B. P. Zhang, K. Wakatsuki, N. T. Binh, Y. Segawa and N. Usami
Journal of Applied Physics 96 巻 ( 1 ) 頁： 340-343 2004年7月
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Pressure-dependent ZnO nanocrsytal growth in a chemical vapor deposition process
B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma
Journal of Physical Chemistry B 108 巻 頁： 10899-10902 2004年7月
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Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution
W. G. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima and R. Shimokawa
Journal of Applied Physics 96 巻 ( 2 ) 頁： 1238-1241 2004年7月
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Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation
Y. Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara and T. Ujihara
Japanese Journal of Applied Physics Part 2-Letters & Express Letters 43 巻 ( 7A ) 頁： L907-L909 2004年7月
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Structural and optical properties of ZnO epitaxial films grown on Al2O3 (1120) substrates by metalorganic chemical vapor deposition
N. T. Binh, B. P. Zhang, C. Y. Liu, K. Wakatsuki, Y. Segawa, N. Usami, Y. Yamada, M. Kawasaki and H. Koinuma
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 43 巻 ( 7A ) 頁： 4110-4113 2004年7月
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Effects of growth temperature on the surface morphology of silicon thin films on (111) silicon monocrystalline substrate by liquid phase epitaxy
T. Ujihara, E. Kanda, K. Obara, K. Fujiwara, N. Usami, G. Sazaki, A. Alguno, T. Shishido and K. Nakajima
Journal of Crystal Growth 266 巻 ( 4 ) 頁： 467-474 2004年6月
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Grain growth behaviors of polycrystalline silicon during melt growth processes
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
Journal of Crystal Growth 266 巻 ( 4 ) 頁： 441-448 2004年6月
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Formation of highly aligned ZnO tubes on sapphire (0001) substrates
B. P. Zhang, N. T. Binh, K. Wakatsuki, Y. Segawa, Y. Yamada, N. Usami, M. Kawasaki and H. Koinuma
Applied Physics Letters 84 巻 ( 20 ) 頁： 4098-4100 2004年3月
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Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition
B. P. Zhang, K. Wakatsuki, N. T. Binh, N. Usami and Y. Segawa
Thin Solid Films 449 巻 頁： 12-19 2004年2月
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Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe
N. Usami, W. G. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K. Nakajima
Japanese Journal of Applied Physics Part 2-Letters 43 巻 ( 2B ) 頁： L250-L252 2004年2月
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In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
Journal of Crystal Growth 262 巻 頁： 536-542 2004年2月
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Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate
G. Sazaki, T. Fujino, J. T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, Y. Takahashi, E. Matsubara, T. Sakurai and K. Nakajima
Journal of Crystal Growth 262 巻 頁： 196-201 2004年2月
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In-situ observations of melt growth behavior of polycrystalline silicon
K. Fujiwara, Y. Obinata, T. Ujhara, N. Usami, G. Sazaki and K. Nakajima
Journal of Crystal Growth 262 巻 頁： 124-129 2004年2月
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Low-temperature growth of ZnO epitaxial films by metal organic chemical vapor deposition
B. P. Zhang, N. T. Binh, K. Wakatsuki, N. Usami and Y. Segawa
Applied Physics a-Materials Science & Processing 78 巻 ( 1 ) 頁： 25-28 2004年1月