論文 - 牧原 克典
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Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application 査読有り
S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
Solid State Phenomena 154 巻 頁： 95-100 2009年
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Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique 査読有り
K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki
Transaction of MRS-J 34 巻 ( 2 ) 頁： 309-312 2009年
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Charge Storage Characteristics of Hybrid Nanodots Floating Gate 査読有り
S. Miyazaki, K. Makihara and M. Ikeda
ECS TRANSACTIONS 25 巻 ( 7 ) 頁： 433-439 2009年
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Physics of Nano-contact Between Si Quantum Dots and Inversion Layer 査読有り
Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara and S. Miyazaki
ECS TRANSACTIONS 25 巻 ( 7 ) 頁： 463-469 2009年
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Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface 査読有り
S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki
ECS TRANSACTIONS 19 巻 ( 22 ) 頁： 35-43 2009年
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Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics 査読有り
K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics 47 巻 ( 4 ) 頁： 3099-3102 2008年
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Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 査読有り
T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki
Thin Solid Films 517 巻 ( 1 ) 頁： 216-218 2008年
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Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate 査読有り
T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki and K. Shibahara
Surface and Interface Analysis 40 巻 頁： 1126-1130 2008年
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Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application 査読有り
S. Miyazaki, K. Makihara and M. Ikeda
Thin Solid Films 517 巻 ( 1 ) 頁： 41-44 2008年
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Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics 査読有り
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
Thin Solid Films 517 巻 ( 1 ) 頁： 306-308 2008年
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Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 査読有り
K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
ECS TRANSACTIONS 16 巻 ( 10 ) 頁： 255-260 2008年
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Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM 査読有り
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki,
IEICE TRANSACTIONS on Electronics E91-C 巻 ( 5 ) 頁： 712-715 2008年
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Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots 査読有り
J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki
Solid State Phenomena 121-123 巻 頁： 557-560 2007年
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High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2
T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki
Materials Science Forum 561-565 巻 頁： 1209-1212 2007年
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Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack 査読有り
A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara
Microelectronic Engineering 84 巻 頁： 2386-2389 2007年
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Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application 査読有り
S. Miyazaki, M. Ikeda and K. Makihara
ECS TRANSACTIONS 11 巻 ( 6 ) 頁： 233-243 2007年
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Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique 査読有り
R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
Materials Science Forum 561-565 巻 頁： 1213-1216 2007年
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Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe 査読有り
K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
Thin Solid Films 508 巻 ( 1-2 ) 頁： 186-189 2006年
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Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4 査読有り
T. Sakata, K. Makihara, S. Higashi and S. Miyazaki
Thin Solid Films 515 巻 ( 12 ) 頁： 4971-4974 2006年
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Study of Charged States of Si Quantum Dots with Ge Core 査読有り
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
ECS TRANSACTIONS 3 巻 ( 7 ) 頁： 257-262 2006年