論文 - 牧原 克典
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Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation
Lu Yimin, Makihara Katsunori, Takeuchi Daichi, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 6 ) 2017年6月
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Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Kato Yusuke, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
IEICE TRANSACTIONS ON ELECTRONICS E100C 巻 ( 5 ) 頁： 468-474 2017年5月
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Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces
Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 4 ) 2017年4月
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Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface
Truyen Nguyen Xuan, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月
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High-density formation of Ta nanodot induced by remote hydrogen plasma
Wang Yaping, Takeuchi Daichi, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月
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Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors 査読有り
Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
IEICE TRANSACTIONS on Electronics E100-C 巻 頁： 468-474 2017年
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Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation 査読有り
Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki
Japanese Journal of Applied Physics 56 巻 頁： 06GG07 (4page) 2017年
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Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis 査読有り
A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki
Microelectronic Engineering 178 巻 頁： 80-84 2017年
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Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy 査読有り
A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
Microelectronic Engineering 178 巻 頁： 85-88 2017年
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Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties 査読有り
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
Materials Science in Semiconductor Processing 70 巻 頁： 183-187 2017年
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Photoemission Study on Electrical Dipole at SiO2/Si and HfO2/SiO2 Interfaces 査読有り
N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki
Jpn. J. Appl. Phys. 56 巻 頁： 4CB04 (6pages) 2017年
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Magnetoelectronic transport of double stack FePt nanodots 査読有り
K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki
Appl. Phys. Lett. 111 巻 頁： 052403 (4pages) 2017年
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Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices
Miyazaki Seiichi, Yamada Kentaro, Makihara Katsunori, Ikeda Mitsuhisa
SEMICONDUCTOR PROCESS INTEGRATION 10 80 巻 ( 4 ) 頁： 167-172 2017年
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Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons 査読有り
T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki
ECS Trans. 75 巻 ( 8 ) 頁： 777-783 2016年
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Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature 査読有り
K. Makihara, T. Kato, Y. Kabeya, Y. Mitsuyuki, A. Ohta, D. Oshima, S. Iwata, Y. Darma, M. Ikeda and S. Miyazaki
Scientific Reports 6 巻 頁： 33409 (7 pages) 2016年
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Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma 査読有り
H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Jpn, J. Appl. Phys. 55 巻 頁： 01AE20 2016年
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Evaluation of field emission properties from multiple-stacked Si quantum dots 査読有り
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Thin Solid Films 602 巻 頁： 68-71 2016年
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Study on electroluminescence from multiply-stacking valency controlled Si quantum dots 査読有り
T. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Thin Solid Films 602 巻 頁： 48-51 2016年
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Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core 査読有り
K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
ECS Trans. 75 巻 ( 8 ) 頁： 695-700 2016年
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Photoluminescence study of high density Si quantum dots with Ge core 査読有り
K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki
Journal of Applied Physics 19 巻 頁： 033103 (5pages) 2016年