論文 - 牧原 克典
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Processing and Characterization of Si/Ge Quantum Dots 査読有り
S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda
Technical Digest of Int. Electron Devices Meeting 頁： 826-830 2016年
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High-density formation of Ta nanodot induced by remote hydrogen plasma 査読有り
Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. 56 巻 頁： 01AE01/4pages 2016年
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Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes 査読有り
T. Arai, A. Ohta, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. 55 巻 頁： 06GH07/5pages 2016年
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Evaluation of Valence Band Top and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS 査読有り
N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. 55 巻 頁： 08PC06/5pages 2016年
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Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface 査読有り
N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda and S. Miyazaki
Jpn. J. of Appl. Phys. 56 巻 頁： 01AF01/5pages 2016年
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High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties 査読有り
R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, T. Kato, S. Iwata, M. Ikeda and S. Miyazaki
Trans. Mat. Res. Sco. Japan 40 巻 ( 4 ) 頁： 347-350 2015年
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Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy 査読有り
A. Ohta, K. Makihara and S. Miyazaki
Microelectronic Engineering 147 巻 頁： 264-268 2015年
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Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons 査読有り
A. Ohta, H. Murakami, K. Makihara and S. Miyazaki
Jpn, J. Appl. Phys. 54 巻 頁： 06FH08 2015年
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Increase in the work function of W/WO3 by helium plasma irradiation 査読有り
S. Kajita, A. Ohta, T. Ishida, K. Makihara, T. Yoshida and N. Ohno
Jpn, J. Appl. Phys. 54 巻 頁： 126201 2015年
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Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots 査読有り
Y. Kato, T. Arai, A. Ohta, K. Makihara and S. Miyazaki
ECS Trans. 69 巻 ( 10 ) 頁： 291-298. 2015年
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Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure 査読有り
H. Watanabe, A. Ohta, K. Makihara and S. Miyazaki
ECS Trans. 69 巻 ( 10 ) 頁： 179-186 2015年
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Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements 査読有り
A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki
IEICE TRANSACTIONS on Electronics E98-C 巻 頁： 406-410 2015年
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Selective Growth of Self-Assembling Si and SiGe Quantum Dots 査読有り
K. Makihara,M. Ikeda and S. Miyazaki
IEICE Trans. on Electronics E97-C 巻 ( 5 ) 頁： 393-396 2014年
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High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy 査読有り
D. Takeuchi,K. Makihara,M. Ikeda,S. Miyazaki,H. Kaki and T. Hayashi
IEICE Trans. on Electronics E97-C 巻 ( 5 ) 頁： 397-400 2014年
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Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization 査読有り
K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki
Jpn. J. Appl. Phys. 53 巻 頁： 11RA02 2014年
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Effect of electric field concentration using nanopeak structures on the current-voltage characteristics of resistive switching memory 査読有り
S. Otsuka, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, A. Yamasaki, Y. Tanimoto and K. Takase
AIP Advances 4 巻 頁： 087110 (7 pages) 2014年
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Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack 査読有り
A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki
ECS Trans. 64 巻 ( 6 ) 頁： 241-248 2014年
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Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy 査読有り
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
ECS Trans. 64 巻 ( 6 ) 頁： 923-928 2014年
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Photoluminescence Study of Si Quantum Dots with Ge Core 査読有り
K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki
ECS Trans. 64 巻 ( 6 ) 頁： 365-370 2014年
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High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma 査読有り
H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki
Advanced Materials Research 750-752 巻 頁： 1011-1015 2013年