論文 - 牧原 克典
-
The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure 査読有り
G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics 94-C 巻 ( 5 ) 頁: 699-704 2011年
-
Collective Tunneling Model in Charge Trap Type NVM Cell 査読有り
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh
Japanese Journal of Applied Physics 50 巻 ( 4 ) 頁: 04DD04 2011年
-
Study on Native Oxidation of Ge (111) and (100) Surfaces 査読有り
S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics 50 巻 ( 4 ) 頁: 04DA12 2011年
-
Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory 査読有り
K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics 50 巻 ( 8 ) 頁: 08KE06 2011年
-
Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure 査読有り
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh
Key Engineering Materials 470 巻 頁: 48-53 2011年
-
Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots 査読有り
Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki
Japanese Journal of Applied Physics 49 巻 ( 1 ) 頁: 014001 2010年
-
Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application
S. Miyazaki, K. Makihara, M. Ikeda
Thin Solid Films 518 巻 頁: S30-S34 2010年
-
Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application 査読有り
S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
Journal of of Materials Science Forum 638-642 巻 頁: 1725-1730 2010年
-
Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots 査読有り
Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki
Physica E 42 巻 ( 4 ) 頁: 918–921 2010年
-
Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure 査読有り
K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
Journal of Optoelectronics and Advanced Materials 12 巻 ( 3 ) 頁: 626-630 2010年
-
Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures 査読有り
Y. Sakurai, Y. Takada, J-I Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki
ECS TRANSACTIONS 28 巻 ( 1 ) 頁: 369-374 2010年
-
Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation 査読有り
T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki
Physica Status Solidi C 7 巻 ( 3-4 ) 頁: 732-734 2010年
-
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots 査読有り
K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki
IEICE TRANSACTIONS on Electronics 93-C 巻 ( 5 ) 頁: 569-572 2010年
-
Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma 査読有り
A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki
Japanese Journal of Applied Physics 49 巻 頁: 08JA04 2010年
-
Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices 査読有り
M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta
Physica E 43 巻 ( 10 ) 頁: 2602–2605 2010年
-
Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid 査読有り
T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and Seiichi Miyazaki
ECS TRANSACTIONS 33 巻 ( 6 ) 頁: 165-170 2010年
-
Self-Align Formation of Si Quantum Dots 査読有り
K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki
ECS TRANSACTIONS 33 巻 ( 6 ) 頁: 661-667 2010年
-
Electroluminescence from Si Quantum Dots/SiO2 Multilayers with Ultrathin Oxide Layers due to Bipolar Injection 査読有り
J. Xu, K. Makihara, H. Deki and S. Miyazaki
Solid State Communications 149 巻 頁: 739-742 2009年
-
Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor 査読有り
Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S.Miyazaki
Journal of Physics: Condensed Matter 150 巻 頁: 022071 2009年
-
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories 査読有り
K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics 92-C 巻 ( 5 ) 頁: 616-619 2009年