論文 - 牧原 克典
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Crystalline phase transition of ultra-thin Ni-silicide film during SiH<sub>4</sub> exposure
Tanida, S; Taoka, N; Makihara, K
JAPANESE JOURNAL OF APPLIED PHYSICS 64 巻 ( 2 ) 2025年2月
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Study of dot size effect on electron emission from Si-QDs multiple-stacked structures
Baek, J; Makihara, K; Obayashi, S; Imai, Y; Taoka, N; Miyazaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 9 ) 2024年9月
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Makihara, K; Yamamoto, Y; Yagi, H; Li, LR; Taoka, N; Tillack, B; Miyazaki, S
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 174 巻 2024年5月
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Self-assembling mechanism of Si-QDs on thermally grown SiO<sub>2</sub>
Baek, J; Imai, Y; Tsuji, R; Makihara, K; Miyazaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 4 ) 2024年4月
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Formation of one-dimensionally self-aligned Si-QDs and their local electron discharging properties
Imai, Y; Makihara, K; Yamamoto, Y; Wen, WC; Schubert, MA; Baek, J; Tsuji, R; Taoka, N; Ohta, A; Miyazaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 4 ) 2024年4月
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Self-assembling formation of Si-QDs on SiO<sub>2</sub> line patterns
Tsuji, R; Imai, Y; Baek, J; Makihara, K; Miyazaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 3 ) 2024年3月
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Kimura, K; Taoka, N; Ohta, A; Makihara, K; Miyazaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 2 ) 2024年2月
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Formation of β-FeSi<sub>2</sub> nanodots by SiH<sub>4</sub> exposure to Fe nanodots
Saito, H; Makihara, K; Taoka, N; Miyazaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS 63 巻 ( 2 ) 2024年2月
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Alignment control of self-assembling Si quantum dots
Imai, Y; Tsuji, R; Makihara, K; Taoka, N; Ohta, A; Miyazaki, S
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 162 巻 2023年8月
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Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure
Matsushita Keigo, Ohta Akio, Shibayama Shigehisa, Tokunaga Tomoharu, Taoka Noriyuki, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SG ) 2023年6月
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Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots
Makihara, K; Yamamoto, Y; Imai, Y; Taoka, N; Schubert, MA; Tillack, B; Miyazaki, S
NANOMATERIALS 13 巻 ( 9 ) 2023年4月
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Characterization of magnesium channeled implantation layers in GaN(0001)
Suyama Atsushi, Kawanowa Hitoshi, Minagawa Hideaki, Maekawa Junko, Nagamachi Shinji, Aoki Masahiko, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SC ) 2023年4月
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Formation of ultra-thin NiGe film with single crystalline phase and smooth surface
Nishimura Shunsuke, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SC ) 2023年4月
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Evaluation of chemical structure and Si segregation of Al/Si(111)
Sakai Taiki, Ohta Akio, Matsushita Keigo, Taoka Noriyuki, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SC ) 2023年4月
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Effects of Cl passivation on Al2O3/GaN interface properties
Nagai Taisei, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 62 巻 ( SA ) 2023年1月
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Study on Electron Emission from Phosphorus ?-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures
Makihara, K; Takemoto, T; Obayashi, S; Ohta, A; Taoka, N; Miyazaki, S
IEICE TRANSACTIONS ON ELECTRONICS E105C 巻 ( 10 ) 頁: 610 - 615 2022年10月
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Matsushita Keigo, Ohta Akio, Taoka Noriyuki, Hayashi Shohei, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SH ) 2022年7月
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Study on silicidation reaction of Fe nanodots with SiH<sub>4</sub>
Furuhata, H; Makihara, K; Shimura, Y; Fujimori, S; Imai, Y; Ohta, A; Taoka, N; Miyazaki, S
APPLIED PHYSICS EXPRESS 15 巻 ( 5 ) 2022年5月
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Honda Shunsuke, Makihara Katsunori, Taoka Noriyuki, Furuhata Hiroshi, Ohta Akio, Oshima Daiki, Kato Takeshi, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SA ) 2022年1月
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Segregation control for ultrathin Ge layer in Al/Ge(111) system
Ohta, A; Kobayashi, M; Taoka, N; Ikeda, M; Makihara, K; Miyazaki, S
JAPANESE JOURNAL OF APPLIED PHYSICS 61 巻 ( SA ) 2022年1月
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Characterization of Light Emission Properties of Impurity Doped Ge/Si Core-Shell Quantum Dots
Miyazaki S., Imai Y., Makihara K.
ECS Transactions 109 巻 ( 4 ) 頁: 335 - 341 2022年
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Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal 査読有り 国際誌
Ohta Akio, Yamada Kenzo, Sugawa Hibiki, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 2021年5月
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Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy 査読有り 国際誌
Ohta Akio, Imagawa Takuya, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SA ) 2021年1月
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Ohta A., Imagawa T., Taoka N., Ikeda M., Makihara K., Miyazaki S.
Japanese Journal of Applied Physics 60 巻 2021年1月
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Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core 査読有り 国際誌
Makihara Katsunori, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 120 巻 2020年12月
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Characterization of photoluminescence from Si quantum dots with B delta-doped Ge core 査読有り 国際誌
Maehara Takuya, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 119 巻 2020年11月
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Complex dielectric function of Si oxide as evaluated from photoemission measurements 査読有り 国際誌
Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月
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Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface 査読有り
Kobayashi Masato, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Taoka Noriyuki, Simizu Tomohiro, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月
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Characterization of magnetic-field dependent electron transport of Fe3Si nanodots by using a magnetic AFM probe 査読有り 国際共著 国際誌
Wu J.
ECS Transactions 98 巻 ( 5 ) 頁: 493 - 498 2020年
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Electron field emission from multiply-stacked Si quantum dots structures with graphene top-electrode 査読有り 国際誌
Niibayashi T.
ECS Transactions 98 巻 ( 5 ) 頁: 429 - 434 2020年
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Crystallization of Ge thin films on sapphire(0001) by thermal annealing 査読有り 国際誌
Sugawa H.
ECS Transactions 98 巻 ( 5 ) 頁: 505 - 511 2020年
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Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures
Takada Noriharu, Taoka Noriyuki, Ohta Akio, Yamamoto Taishi, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月
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Effect of H-2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core
Fujimori Shuntaro, Nagai Ryo, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月
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Impact of surface pre-treatment on Pt-nanodot formation induced by remote H-2-plasma exposure
Fujimori Shuntaro, Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月
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Impact of remote plasma oxidation of a GaN surface on photoluminescence properties
Takada Noriharu, Taoka Noriyuki, Yamamoto Taishi, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月
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Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots
Futamura Yuto, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi
IEICE TRANSACTIONS ON ELECTRONICS E102C 巻 ( 6 ) 頁: 458-461 2019年6月
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Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy
Futamura Yuto, Nakashima Yuta, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月
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Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core
Nagai Ryo, Yamada Kentaro, Fujimori Shuntaro, Ikeda Mitsuhisa, Makihara Katsunori, Ohta Akio, Miyazaki Seiichi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月
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Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface
Ohta Akio, Nguyen Xuan Truyen, Fujimura Nobuyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Low-temperature formation of Ga-oxide/GaN interface with remote oxygen plasma and its interface properties
Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He
Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N-2 ambient
Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current
Ohta Akio, Kato Yusuke, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma
Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis
Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
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Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si plus Ge) compositions
Ito Koichi, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
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High thermal stability of abrupt SiO2/GaN interface with low interface state density
Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Makihara Katsunori, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 4 ) 2018年4月
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Characterization of remote O-2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements
Nguyen Xuan Truyen, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月
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Formation of Mn-germanide nanodots on ultrathin SiO2 induced by remote hydrogen plasma
Wen Yinghui, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 1 ) 2018年1月
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Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection
Makihara Katsunori, Ikeda Mitsuhisa, Fujimura Nobuyuki, Yamada Kentaro, Ohta Akio, Miyazaki Seiichi
APPLIED PHYSICS EXPRESS 11 巻 ( 1 ) 2018年1月
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Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection 査読有り
K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki
Applied Physics Express 11 巻 頁: 011305 (4pages) 2018年
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Segregated SiGe ultrathin layer formation and surface planarization on epitaxial Ag(111) by annealing of Ag/SiGe(111) with different Ge/(Si+Ge) compositions 査読有り
K. Ito, A. Ohta, M. Kurosawa, M. Araidai, M. Ikeda, K. Makihara, and S. Miyazaki
Japanese Jounal of Applied Physics 57 巻 頁: 04FJ05 2018年
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Characterization of remote O2-plasma-enhanced CVD SiO2/GaN(0001) structure using photoemission measurements 査読有り
N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda, and S. Miyazaki
Japanese Jounal of Applied Physics 57 巻 頁: 01AD02 2018年
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Carrier Conduction in SiO2/GaN Structure with Abrupt Interface
Nguyen Xuan Truyen, Taoka Noriyuki, Ohta Akio, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi
2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) 頁: . 2018年
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High Density Formation and Magnetoelectronic Transport Properties of Fe3Si Nanodots 査読有り
Hai Zhang, Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki
ECS Trans. 86 巻 ( 7 ) 頁: 131-138 2018年
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Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties
Takeuchi Daichi, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 巻 頁: 183-187 2017年11月
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リモートプラズマCVD SiO<sub>2</sub>/GaN界面の熱安定性
グェン スァン チュン, 田岡 紀之, 大田 晃生, 山田 永, 高橋 言緒, 池田 弥央, 牧原 克典, 清水 三聡, 宮崎 誠一
応用物理学会学術講演会講演予稿集 2017.2 巻 ( 0 ) 頁: 3024 - 3024 2017年8月
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Magnetoelectronic transport of double stack FePt nanodots
Makihara Katsunori, Kawase Taiga, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi
APPLIED PHYSICS LETTERS 111 巻 ( 5 ) 2017年7月
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Evaluation of energy distribution of filled defects of Si oxide thin films from total photoelectron yield spectroscopy
Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
MICROELECTRONIC ENGINEERING 178 巻 頁: 85-88 2017年6月
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Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis
Ohta Akio, Murakami Hideki, Ikeda Mitsuhisa, Makihara Katsunori, Ikenaga Eiji, Miyazaki Seiichi
MICROELECTRONIC ENGINEERING 178 巻 頁: 80-84 2017年6月
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Low-temperature formation of crystalline Si:H/Ge:H heterostructures by plasma-enhanced CVD in combination with Ni-nanodots seeding nucleation
Lu Yimin, Makihara Katsunori, Takeuchi Daichi, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 6 ) 2017年6月
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Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors
Kato Yusuke, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
IEICE TRANSACTIONS ON ELECTRONICS E100C 巻 ( 5 ) 頁: 468-474 2017年5月
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Photoemission study on electrical dipole at SiO2/Si and HfO2/SiO2 interfaces
Fujimura Nobuyuki, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 4 ) 2017年4月
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Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface
Truyen Nguyen Xuan, Ohta Akio, Makihara Katsunori, Ikeda Mitsuhisa, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月
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High-density formation of Ta nanodot induced by remote hydrogen plasma
Wang Yaping, Takeuchi Daichi, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 巻 ( 1 ) 2017年1月
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Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors 査読有り
Y. Kato, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
IEICE TRANSACTIONS on Electronics E100-C 巻 頁: 468-474 2017年
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Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation 査読有り
Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki
Japanese Journal of Applied Physics 56 巻 頁: 06GG07 (4page) 2017年
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Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis 査読有り
A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki
Microelectronic Engineering 178 巻 頁: 80-84 2017年
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Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy 査読有り
A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
Microelectronic Engineering 178 巻 頁: 85-88 2017年
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Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties 査読有り
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
Materials Science in Semiconductor Processing 70 巻 頁: 183-187 2017年
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Photoemission Study on Electrical Dipole at SiO2/Si and HfO2/SiO2 Interfaces 査読有り
N. Fujimura, A. Ohta, M. Ikeda, K. Makihara, S. Miyazaki
Jpn. J. Appl. Phys. 56 巻 頁: 4CB04 (6pages) 2017年
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Magnetoelectronic transport of double stack FePt nanodots 査読有り
K. Makihara, T. Kawase, A. Ohta, M. Ikeda, and S. Miyazaki
Appl. Phys. Lett. 111 巻 頁: 052403 (4pages) 2017年
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Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices
Miyazaki Seiichi, Yamada Kentaro, Makihara Katsunori, Ikeda Mitsuhisa
SEMICONDUCTOR PROCESS INTEGRATION 10 80 巻 ( 4 ) 頁: 167-172 2017年
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Evaluation of Dielectric Function of Thermally-grown SiO2 and GeO2 from Energy Loss Signals for XPS Core-line Photoelectrons 査読有り
T. Yamamoto, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki
ECS Trans. 75 巻 ( 8 ) 頁: 777-783 2016年
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Nano spin-diodes using FePt-NDs with huge on/off current ratio at room temperature 査読有り
K. Makihara, T. Kato, Y. Kabeya, Y. Mitsuyuki, A. Ohta, D. Oshima, S. Iwata, Y. Darma, M. Ikeda and S. Miyazaki
Scientific Reports 6 巻 頁: 33409 (7 pages) 2016年
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Formation and characterization of high-density FeSi nanodots on SiO2 induced by remote H2 plasma 査読有り
H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Jpn, J. Appl. Phys. 55 巻 頁: 01AE20 2016年
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Evaluation of field emission properties from multiple-stacked Si quantum dots 査読有り
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Thin Solid Films 602 巻 頁: 68-71 2016年
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Study on electroluminescence from multiply-stacking valency controlled Si quantum dots 査読有り
T. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
Thin Solid Films 602 巻 頁: 48-51 2016年
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Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core 査読有り
K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
ECS Trans. 75 巻 ( 8 ) 頁: 695-700 2016年
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Photoluminescence study of high density Si quantum dots with Ge core 査読有り
K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki
Journal of Applied Physics 19 巻 頁: 033103 (5pages) 2016年
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Processing and Characterization of Si/Ge Quantum Dots 査読有り
S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda
Technical Digest of Int. Electron Devices Meeting 頁: 826-830 2016年
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High-density formation of Ta nanodot induced by remote hydrogen plasma 査読有り
Y. Wang, D. Takeuchi, A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. 56 巻 頁: 01AE01/4pages 2016年
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Impact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes 査読有り
T. Arai, A. Ohta, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. 55 巻 頁: 06GH07/5pages 2016年
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Evaluation of Valence Band Top and Electron Affinity of SiO2 and Si-based Semiconductors Using XPS 査読有り
N. Fujimura, A. Ohta, K. Makihara, and S. Miyazaki
Jpn. J. of Appl. Phys. 55 巻 頁: 08PC06/5pages 2016年
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Effects of remote hydrogen plasma on chemical bonding features and electronic states of 4H-SiC(0001) surface 査読有り
N. X. Truyen, A. Ohta, K. Makihara, M. Ikeda and S. Miyazaki
Jpn. J. of Appl. Phys. 56 巻 頁: 01AF01/5pages 2016年
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High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of their Magnetic Properties 査読有り
R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, T. Kato, S. Iwata, M. Ikeda and S. Miyazaki
Trans. Mat. Res. Sco. Japan 40 巻 ( 4 ) 頁: 347-350 2015年
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Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy 査読有り
A. Ohta, K. Makihara and S. Miyazaki
Microelectronic Engineering 147 巻 頁: 264-268 2015年
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Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons 査読有り
A. Ohta, H. Murakami, K. Makihara and S. Miyazaki
Jpn, J. Appl. Phys. 54 巻 頁: 06FH08 2015年
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Increase in the work function of W/WO3 by helium plasma irradiation 査読有り
S. Kajita, A. Ohta, T. Ishida, K. Makihara, T. Yoshida and N. Ohno
Jpn, J. Appl. Phys. 54 巻 頁: 126201 2015年
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Resistive Switching Characteristics of Si-Rich Oxides with Embedding Ti Nanodots 査読有り
Y. Kato, T. Arai, A. Ohta, K. Makihara and S. Miyazaki
ECS Trans. 69 巻 ( 10 ) 頁: 291-298. 2015年
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Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally-Grown SiO2/4H-SiC Structure 査読有り
H. Watanabe, A. Ohta, K. Makihara and S. Miyazaki
ECS Trans. 69 巻 ( 10 ) 頁: 179-186 2015年
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Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements 査読有り
A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara, and S. Miyazaki
IEICE TRANSACTIONS on Electronics E98-C 巻 頁: 406-410 2015年
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Selective Growth of Self-Assembling Si and SiGe Quantum Dots 査読有り
K. Makihara,M. Ikeda and S. Miyazaki
IEICE Trans. on Electronics E97-C 巻 ( 5 ) 頁: 393-396 2014年
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High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy 査読有り
D. Takeuchi,K. Makihara,M. Ikeda,S. Miyazaki,H. Kaki and T. Hayashi
IEICE Trans. on Electronics E97-C 巻 ( 5 ) 頁: 397-400 2014年
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Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization 査読有り
K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki
Jpn. J. Appl. Phys. 53 巻 頁: 11RA02 2014年
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Effect of electric field concentration using nanopeak structures on the current-voltage characteristics of resistive switching memory 査読有り
S. Otsuka, T. Shimizu, S. Shingubara, K. Makihara, S. Miyazaki, A. Yamasaki, Y. Tanimoto and K. Takase
AIP Advances 4 巻 頁: 087110 (7 pages) 2014年
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Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack 査読有り
A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki
ECS Trans. 64 巻 ( 6 ) 頁: 241-248 2014年
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Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy 査読有り
D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
ECS Trans. 64 巻 ( 6 ) 頁: 923-928 2014年
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Photoluminescence Study of Si Quantum Dots with Ge Core 査読有り
K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki
ECS Trans. 64 巻 ( 6 ) 頁: 365-370 2014年
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High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma 査読有り
H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki
Advanced Materials Research 750-752 巻 頁: 1011-1015 2013年
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X-ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures 査読有り
A. Ohta. K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota
IEICE TRANSACTIONS on Electronics 96-C 巻 ( 5 ) 頁: 680-685 2013年
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Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior 査読有り
A. Ohta, K. Makihara, M. Ikeda, H. Murakamis, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics 96-C 巻 ( 5 ) 頁: 702-707 2013年
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Characterization of Resistive Switching of Pt/Si- rich Oxide/TiN System 査読有り
M. Fukushima, A. Ohta, K. Makihara and S. Miyazaki
IEICE TRANSACTIONS on Electronics 96-C 巻 ( 5 ) 頁: 708-713 2013年
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Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar Structures by Conducting-Probe Atomic Force Microscopy 査読有り
D. Takeuchi, K. Makihara, M. Ikeda, S. Miyazaki, H. Kaki and T. Hayashi
IEICE TRANSACTIONS on Electronics 96-C 巻 ( 5 ) 頁: 718-721 2013年
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Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures 査読有り
M. Ikeda, K. Makihara and S. Miyazaki,
IEICE TRANSACTIONS on Electronics 96-C 巻 ( 5 ) 頁: 694-698 2013年
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Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots 査読有り
H. Takami, K. Makihara, M. Ikeda and S. Miyazaki
Japanese Journal of Applied Physics 52 巻 ( 4 ) 頁: 04CG08 2013年
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Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM 査読有り
N. Tsunekawa K. Makihara, M. Ikeda and S. Miyazaki
Trans. of MRS-J 38 巻 ( 3 ) 頁: 393-396 2013年
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Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide ReRAMs with Ti-based Electrodes 査読有り
A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki
Jpn. J. Appl. Phys. 52 巻 頁: 11NJ06 2013年
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Highly-crystallized Ge:H Film Growth from GeH4 VHF-ICP -Crystalline Nucleation Initiated by Ni-nanodots- 査読有り
K. Makihara, J. Gao, K. Sakaike, S. Hayashi, H. Deki, M. Ikeda, S. Higashi and S. Miyazak
Jpn. J. Appl. Phys. 52 巻 ( 9 ) 頁: 11NA04 2013年
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Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application 査読有り
S. Miyazaki, M. Ikeda and K. Makihara
ECS Trans 58 巻 ( 9 ) 頁: 231-237 2013年
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Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes 査読有り
A. Ohta, K. Makihara, M. Fukusima, H. Murakami, S. Higashi and S. Miyazaki
ECS Trans 58 巻 ( 9 ) 頁: 293-300 2013年
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Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy 査読有り
K. Makihara, H. Deki, M Ikeda and S, Miyazaki
Journal of Non-Crystalline Solids 358 巻 ( 17 ) 頁: 2086-2089 2012年
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Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density 査読有り
K. Makihara, H. Deki, M Ikeda and S, Miyazaki
Japanese Journal of Applied Physics 51 巻 ( 4 ) 頁: 04DG08 2012年
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Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes 査読有り
K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki
ECS TRANSACTIONS 50 巻 ( 9 ) 頁: 459-464 2012年
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Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots 査読有り
K. Makihara, M. Ikeda and S. Miyazaki
Journal of Applied Physics 112 巻 頁: 104301 2012年
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Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures 査読有り
N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki
Japanese Journal of Applied Physics 49 巻 頁: 04DJ04 2011年
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Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique 査読有り
K. Makihara and S. Miyazaki
Japanese Journal of Applied Physics 49 巻 ( 2 ) 頁: 065002 2011年
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High Density Formation of Ge Quantum Dots on SiO2 査読有り
K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima and S. Miyazaki
Solid State Electronics 60 巻 頁: 65-69 2011年
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Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures 査読有り
N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki
Key Engineering Materials 470 巻 頁: 135-139 2011年
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Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor 査読有り
M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh
IEICE TRANSACTIONS on Electronics 94-C 巻 ( 5 ) 頁: 730-736 2011年
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The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure 査読有り
G. Wei, Y. Goto, A. Ohta, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics 94-C 巻 ( 5 ) 頁: 699-704 2011年
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Collective Tunneling Model in Charge Trap Type NVM Cell 査読有り
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh
Japanese Journal of Applied Physics 50 巻 ( 4 ) 頁: 04DD04 2011年
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Study on Native Oxidation of Ge (111) and (100) Surfaces 査読有り
S. K. Sahari, H. Murakami, T. Fujioka, T. Bando, A. Ohta, K. Makihara, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics 50 巻 ( 4 ) 頁: 04DA12 2011年
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Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory 査読有り
K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics 50 巻 ( 8 ) 頁: 08KE06 2011年
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Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure 査読有り
M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh
Key Engineering Materials 470 巻 頁: 48-53 2011年
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Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots 査読有り
Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki
Japanese Journal of Applied Physics 49 巻 ( 1 ) 頁: 014001 2010年
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Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application
S. Miyazaki, K. Makihara, M. Ikeda
Thin Solid Films 518 巻 頁: S30-S34 2010年
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Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application 査読有り
S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
Journal of of Materials Science Forum 638-642 巻 頁: 1725-1730 2010年
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Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots 査読有り
Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki
Physica E 42 巻 ( 4 ) 頁: 918–921 2010年
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Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure 査読有り
K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
Journal of Optoelectronics and Advanced Materials 12 巻 ( 3 ) 頁: 626-630 2010年
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Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures 査読有り
Y. Sakurai, Y. Takada, J-I Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki
ECS TRANSACTIONS 28 巻 ( 1 ) 頁: 369-374 2010年
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Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation 査読有り
T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki
Physica Status Solidi C 7 巻 ( 3-4 ) 頁: 732-734 2010年
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Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots 査読有り
K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki
IEICE TRANSACTIONS on Electronics 93-C 巻 ( 5 ) 頁: 569-572 2010年
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Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma 査読有り
A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki
Japanese Journal of Applied Physics 49 巻 頁: 08JA04 2010年
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Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices 査読有り
M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta
Physica E 43 巻 ( 10 ) 頁: 2602–2605 2010年
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Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid 査読有り
T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and Seiichi Miyazaki
ECS TRANSACTIONS 33 巻 ( 6 ) 頁: 165-170 2010年
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Self-Align Formation of Si Quantum Dots 査読有り
K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki
ECS TRANSACTIONS 33 巻 ( 6 ) 頁: 661-667 2010年
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Electroluminescence from Si Quantum Dots/SiO2 Multilayers with Ultrathin Oxide Layers due to Bipolar Injection 査読有り
J. Xu, K. Makihara, H. Deki and S. Miyazaki
Solid State Communications 149 巻 頁: 739-742 2009年
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Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor 査読有り
Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S.Miyazaki
Journal of Physics: Condensed Matter 150 巻 頁: 022071 2009年
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Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories 査読有り
K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics 92-C 巻 ( 5 ) 頁: 616-619 2009年
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Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application 査読有り
S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
Solid State Phenomena 154 巻 頁: 95-100 2009年
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Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique 査読有り
K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki
Transaction of MRS-J 34 巻 ( 2 ) 頁: 309-312 2009年
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Charge Storage Characteristics of Hybrid Nanodots Floating Gate 査読有り
S. Miyazaki, K. Makihara and M. Ikeda
ECS TRANSACTIONS 25 巻 ( 7 ) 頁: 433-439 2009年
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Physics of Nano-contact Between Si Quantum Dots and Inversion Layer 査読有り
Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara and S. Miyazaki
ECS TRANSACTIONS 25 巻 ( 7 ) 頁: 463-469 2009年
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Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface 査読有り
S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki
ECS TRANSACTIONS 19 巻 ( 22 ) 頁: 35-43 2009年
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Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics 査読有り
K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
Japanese Journal of Applied Physics 47 巻 ( 4 ) 頁: 3099-3102 2008年
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Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4 査読有り
T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki
Thin Solid Films 517 巻 ( 1 ) 頁: 216-218 2008年
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Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate 査読有り
T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki and K. Shibahara
Surface and Interface Analysis 40 巻 頁: 1126-1130 2008年
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Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application 査読有り
S. Miyazaki, K. Makihara and M. Ikeda
Thin Solid Films 517 巻 ( 1 ) 頁: 41-44 2008年
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Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics 査読有り
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
Thin Solid Films 517 巻 ( 1 ) 頁: 306-308 2008年
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Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 査読有り
K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
ECS TRANSACTIONS 16 巻 ( 10 ) 頁: 255-260 2008年
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Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM 査読有り
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki,
IEICE TRANSACTIONS on Electronics E91-C 巻 ( 5 ) 頁: 712-715 2008年
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Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots 査読有り
J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki
Solid State Phenomena 121-123 巻 頁: 557-560 2007年
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High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2
T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki
Materials Science Forum 561-565 巻 頁: 1209-1212 2007年
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Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack 査読有り
A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara
Microelectronic Engineering 84 巻 頁: 2386-2389 2007年
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Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application 査読有り
S. Miyazaki, M. Ikeda and K. Makihara
ECS TRANSACTIONS 11 巻 ( 6 ) 頁: 233-243 2007年
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Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique 査読有り
R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
Materials Science Forum 561-565 巻 頁: 1213-1216 2007年
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Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe 査読有り
K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
Thin Solid Films 508 巻 ( 1-2 ) 頁: 186-189 2006年
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Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4 査読有り
T. Sakata, K. Makihara, S. Higashi and S. Miyazaki
Thin Solid Films 515 巻 ( 12 ) 頁: 4971-4974 2006年
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Study of Charged States of Si Quantum Dots with Ge Core 査読有り
K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
ECS TRANSACTIONS 3 巻 ( 7 ) 頁: 257-262 2006年
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Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories 査読有り
S. Miyazaki, M. Ikeda and K. Makihara
ECS TRANSACTIONS 2 巻 ( 1 ) 頁: 157-164 2006年
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Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices 査読有り
K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi and S. Miyazaki
Transaction of MRS-J 31 巻 ( 1 ) 頁: 133-136 2006年
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Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique 査読有り
J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
Thin Solid Films 508 巻 ( 1-2 ) 頁: 190-194 2006年
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Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment 査読有り
K. Makihara, H. Deki, H. Murakami, S. Higashi and S. Miyazaki
Applied Surface Science 244 巻 ( 1-4 ) 頁: 75-78 2005年
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Formation of Microcrystalline Germanium (mc-Ge:H) Films From Inductively-Coupled Plasma CVD 査読有り
Y. Okamoto, K. Makihara, H. Murakami, S. Higashi and S. Miyazaki
Applied Surface Science 244 巻 ( 1-4 ) 頁: 12-15 2005年
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Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique 査読有り
K. Makihara, Y. Okamoto, H. Murakami, S. Higashi and S. Miyazaki
IEICE TRANSACTIONS on Electronics E88-C 巻 ( 4 ) 頁: 705-708 2005年
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Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe 査読有り
K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
Thin Solid Films 457 巻 頁: 103-108 2004年
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Structural Defects effect on Ferromagnetism of Layered Oxysulfide (La1-xCaxO)Cu1-xNixS 査読有り
K. Takase, T. Shimizu, K. Makihara, Y. Takahashi, Y. Takano, K. Sekizawa, Y. Kuroiwa, S. Aoyagi, and A. Utsumi
Physica B 329-333 巻 ( 2 ) 頁: 961-962 2003年
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Electrical Resistivity and Photoemission Spectra of Layered Oxysulfide (La1-xCaxO)Cu1-xNixS 査読有り
K. Takase, T. Shimizu, K. Makihara, H. Sato, H. Negishi, Y. Takahashi, Y. Takano, K. Sekizawa, Y. Kuroiwa, S. Aoyagi, A. Utsumi, A. Wada, A. Ino, H. Namatame, M. Taniguchi
Physica B 329-333 巻 ( 2 ) 頁: 898-899 2003年
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Electrical Resistivity and Photoluminescence Spectrum of Layered Oxysulfide (LaO)CuS 査読有り
K. Takase, M. Koyano, T. Shimizu, K. Makihara, Y. Takahashi, Y. Takano, and K. Sekizawa
Solid State Communications 123 巻 頁: 531-534 2002年