論文 - 牧原 克典
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Characterization of Light Emission Properties of Impurity Doped Ge/Si Core-Shell Quantum Dots
Miyazaki S., Imai Y., Makihara K.
ECS Transactions 109 巻 ( 4 ) 頁: 335 - 341 2022年
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Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal 査読有り 国際誌
Ohta Akio, Yamada Kenzo, Sugawa Hibiki, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 2021年5月
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Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy 査読有り 国際誌
Ohta Akio, Imagawa Takuya, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SA ) 2021年1月
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Ohta A., Imagawa T., Taoka N., Ikeda M., Makihara K., Miyazaki S.
Japanese Journal of Applied Physics 60 巻 2021年1月
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Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core 査読有り 国際誌
Makihara Katsunori, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 120 巻 2020年12月
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Characterization of photoluminescence from Si quantum dots with B delta-doped Ge core 査読有り 国際誌
Maehara Takuya, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 119 巻 2020年11月
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Complex dielectric function of Si oxide as evaluated from photoemission measurements 査読有り 国際誌
Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月
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Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface 査読有り
Kobayashi Masato, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Taoka Noriyuki, Simizu Tomohiro, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月
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Characterization of magnetic-field dependent electron transport of Fe3Si nanodots by using a magnetic AFM probe 査読有り 国際共著 国際誌
Wu J.
ECS Transactions 98 巻 ( 5 ) 頁: 493 - 498 2020年
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Electron field emission from multiply-stacked Si quantum dots structures with graphene top-electrode 査読有り 国際誌
Niibayashi T.
ECS Transactions 98 巻 ( 5 ) 頁: 429 - 434 2020年
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Crystallization of Ge thin films on sapphire(0001) by thermal annealing 査読有り 国際誌
Sugawa H.
ECS Transactions 98 巻 ( 5 ) 頁: 505 - 511 2020年
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Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures
Takada Noriharu, Taoka Noriyuki, Ohta Akio, Yamamoto Taishi, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月
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Impact of surface pre-treatment on Pt-nanodot formation induced by remote H-2-plasma exposure
Fujimori Shuntaro, Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月
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Effect of H-2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core
Fujimori Shuntaro, Nagai Ryo, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月
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Impact of remote plasma oxidation of a GaN surface on photoluminescence properties
Takada Noriharu, Taoka Noriyuki, Yamamoto Taishi, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月
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Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots
Futamura Yuto, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi
IEICE TRANSACTIONS ON ELECTRONICS E102C 巻 ( 6 ) 頁: 458-461 2019年6月
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Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy
Futamura Yuto, Nakashima Yuta, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月
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Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core
Nagai Ryo, Yamada Kentaro, Fujimori Shuntaro, Ikeda Mitsuhisa, Makihara Katsunori, Ohta Akio, Miyazaki Seiichi
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月
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Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current
Ohta Akio, Kato Yusuke, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月
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Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma
Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月