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Characterization of Light Emission Properties of Impurity Doped Ge/Si Core-Shell Quantum Dots

Miyazaki S., Imai Y., Makihara K.

ECS Transactions 109 巻 ( 4 ) 頁： 335 - 341 2022年

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：ECS Transactions

We have fabricated valency-controlled Si-QDs with Ge-core with an areal density as high as ~1011 cm-2 on ultrathin SiO2 and studied the effect of phosphorus- and boron-doping on Ge-core from their PL properties. During the Ge deposition, delta doping of phosphorus or boron atoms in QDs was carried out by pulse injection using 1% PH3 or B2H6 diluted with He, respectively. No changes in dot size and density with either P- or B-doping were confirmed by AFM topographic images. Under photoexcitation of undoped QDs with a 976-nm line from a semiconductor laser, broad PL spectra consisting of four Gaussian components originating from radiative recombination through quantized states in QDs were observed in the energy range from 0.62 to 0.85 eV without impurity doping even at room temperature. In the doped QDs, relatively-narrow components peaked at ~0.68 eV and ~0.64eV were observed with P-doping and with B-doping to Ge-core, respectively, in addition to the four components seen in undoped QDs. It is interesting noted that, with an increase in B2H6 pulse injection from 1 to 4 times, the integrated PL intensity was enhanced by a factor of 1.4 to 2.4 compared to that of the undoped QDs while no significant change in spectral shape was observable. This can be interpreted in terms of an increase in the number of holes with B-doping to the Ge core since the carrier recombination rates is proportional to the product of the number of electrons and holes confined in QD under weak photoexcitation.

DOI： 10.1149/10904.0335ecst

Scopus

Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal 査読有り国際誌

Ohta Akio, Yamada Kenzo, Sugawa Hibiki, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SB ) 2021年5月

Energy band diagram for SiO2/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy 査読有り国際誌

Ohta Akio, Imagawa Takuya, Taoka Noriyuki, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 60 巻 ( SA ) 2021年1月

Energy band diagram for SiO<inf>2</inf>/Si system as evaluated from UPS analysis under vacuum ultraviolet with variable incident photon energy

Ohta A., Imagawa T., Taoka N., Ikeda M., Makihara K., Miyazaki S.

Japanese Journal of Applied Physics 60 巻 2021年1月

記述言語：英語掲載種別：研究論文（学術雑誌）出版者・発行元：Japanese Journal of Applied Physics

We have studied the energy band diagram for the Si surface and SiO2/Si system by using ultraviolet photoelectron spectroscopy (UPS) measurements. In the UPS measurements, monochromatized vacuum ultraviolet with variable incident photon energies below 10.50 eV was used in order to increase the detection limit of the depth from the surface and to understand the electronic states not only at the surface but also in the region near the interface of the stacked structure. From the incident photon energy dependence of the UPS spectral width, the energy level of the valence band top of the H-terminated Si surface and the electrical potential change in the SiO2/Si structure has been evaluated. Also, the vacuum work function value of the hetero-epitaxial Ag(111) surface has been investigated to check this measurement technique.

DOI： 10.35848/1347-4065/abb75b

Scopus

Effect of B-doping on photoluminescence properties of Si quantum dots with Ge core 査読有り国際誌

Makihara Katsunori, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 120 巻 2020年12月

Characterization of photoluminescence from Si quantum dots with B delta-doped Ge core 査読有り国際誌

Maehara Takuya, Fujimori Shuntaro, Ikeda Mitsuhisa, Ohta Akio, Makihara Katsunori, Miyazaki Seiichi

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 119 巻 2020年11月

Complex dielectric function of Si oxide as evaluated from photoemission measurements 査読有り国際誌

Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年7月

Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface 査読有り

Kobayashi Masato, Ohta Akio, Kurosawa Masashi, Araidai Masaaki, Taoka Noriyuki, Simizu Tomohiro, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 59 巻 2020年4月

Characterization of magnetic-field dependent electron transport of Fe3Si nanodots by using a magnetic AFM probe 査読有り国際共著国際誌

Wu J.

ECS Transactions 98 巻 ( 5 ) 頁： 493 - 498 2020年

Electron field emission from multiply-stacked Si quantum dots structures with graphene top-electrode 査読有り国際誌

Niibayashi T.

ECS Transactions 98 巻 ( 5 ) 頁： 429 - 434 2020年

Crystallization of Ge thin films on sapphire(0001) by thermal annealing 査読有り国際誌

Sugawa H.

ECS Transactions 98 巻 ( 5 ) 頁： 505 - 511 2020年

Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures

Takada Noriharu, Taoka Noriyuki, Ohta Akio, Yamamoto Taishi, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月

Impact of surface pre-treatment on Pt-nanodot formation induced by remote H-2-plasma exposure

Fujimori Shuntaro, Makihara Katsunori, Ikeda Mitsuhisa, Ohta Akio, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月

Effect of H-2-dilution in Si-cap formation on photoluminescence intensity of Si quantum dots with Ge core

Fujimori Shuntaro, Nagai Ryo, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年8月

Impact of remote plasma oxidation of a GaN surface on photoluminescence properties

Takada Noriharu, Taoka Noriyuki, Yamamoto Taishi, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 2019年6月

Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots

Futamura Yuto, Makihara Katsunori, Ohta Akio, Ikeda Mitsuhisa, Miyazaki Seiichi

IEICE TRANSACTIONS ON ELECTRONICS E102C 巻 ( 6 ) 頁： 458-461 2019年6月

Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy

Futamura Yuto, Nakashima Yuta, Ohta Akio, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 58 巻 ( SA ) 2019年2月

Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core

Nagai Ryo, Yamada Kentaro, Fujimori Shuntaro, Ikeda Mitsuhisa, Makihara Katsunori, Ohta Akio, Miyazaki Seiichi

SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33 巻 ( 12 ) 2018年12月

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

Ohta Akio, Kato Yusuke, Ikeda Mitsuhisa, Makihara Katsunori, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma

Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS 57 巻 ( 6 ) 2018年6月

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