講演・口頭発表等 - 中塚 理
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Crystal growth of Si1-xSnx alloys with high Sn contents 国際会議
M. Kurosawa, M. Kato, Y. Nagae, T. Yamaha, O. Nakatsuka and S. Zaima
8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Photoluminescence Property of Ge1-xSnx Epitaxial Layers Grown on Ge(001) substrates 国際会議
T. Asano, K. Hozaki, T. Koyama, N. Taoka, O. Nakatsuka, H. Kishida and S. Zaima
8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Behaviors of tin related defects in Sb doped n-type germanium 国際会議
W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima
8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Crystalline and Optical Properties of Ge1-x-ySixSny Ternary Alloy Layers for Solar Cell Application 国際会議
T. Yamaha, S. Asaba, T. Terashima, T. Asano, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Formation of strain-free Si1-x-yGexSny layers on Ge surfaces by using solid-liquid coexisting annealing 国際会議
M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka and S. Zaima
8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Epitaxial Growth of Ge1-xSnx Thin Films by using Metal-Organic Chemical Vapor Deposition 国際会議
Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima
8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Growth and Characterization of Si1-x-ySnxCy Ternary Alloy Thin Films for Solar Cell Application 国際会議
T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima
The 6th World Conferenceon Photovoltaic Energy Conversion (WCPEC-6)
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Development of metal/Ge contacts for engineering Schottky barriers 国際会議
O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima
JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
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Hydrogen Surfactant Epitaxy of Ge1-xSnx Layers 国際会議
T. Asano, N. Taoka, K. Hozaki, W. Takeuchi,M. Sakashita, O. Nakatsuka, and S. Zaima
JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
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Growth and Characterization of Ternary Alloy Ge1-x-ySnxCy Layers 国際会議
T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
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Study of Local Strain Distribution in Ge1-xSnx/Ge Fine Structure by using Synchrotron X-ray Microdiffraction 国際会議
S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
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Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height 国際会議
O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima
Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd International Workshop on Advanced Packaging & System Technology (IWAPS)
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Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates 国際会議
A. Suzuki, D. Yunsheng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd International Workshop on Advanced Packaging & System Technology (IWAPS)
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Poly & Epitaxial Crystallization of Silicon-tin Binary Alloys for Future Optoelectronics 国際会議
M. Kurosawa, M. Kato, K. Takahashi, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
16th International Conference on Thin Films (ICTF16)
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Challenges and Developments in GeSn Process Technology for Si Nanoelectronics 招待有り 国際会議
S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita
226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting
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Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates 招待有り 国際会議
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima
226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting
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Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC 国際会議
Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima and T. Tezuka
2014 International Conference on Solid State Devices and Materials (SSDM 2014)
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Growth of Two Inch Si0.5Ge0.5 Bulk Single Crystals 国際会議
K. Kinoshita, Y. Arai, O. Nakatsuka, K. Taguchi, H. Tomioka, R. Tanaka and S. Yoda
2014 International Conference on Solid State Devices and Materials (SSDM 2014)
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Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers 国際会議
T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima
2014 International Conference on Solid State Devices and Materials (SSDM 2014)
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Formation and Energy Band Engineering of Ternary Alloy Ge1-x-ySnxCy Layers 国際会議
T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima
2014 International Conference on Solid State Devices and Materials (SSDM 2014)