講演・口頭発表等 - 中塚 理
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Control of strain structure by microfabrication of Ge/Si1-xGex layers on Si(001) Substrates
K. Mochizuki, T. Mizutani, O. Nakatsuka, H. Kondo, and S. Zaima
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Dependence of electrical properties on crystalline structures of Mn5Ge3/Ge Schottky contacts 国際会議
T. Nishimura, O. Nakatsuka, S. Akimoto, and S. Zaima
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Impact of nitride interfacial layer on electrical properties of high-k/Ge stacked structures
K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Crystalline and electrical properties of PrAlO gate insulator films formed by atomic layer deposition
K. Furuta, W. Takeuchi, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Nitrogen content dependence of crystalline and electrical properties of ternary transition metal gate electrodes
H. Matsushita, K. Miyamoto, K. Furumai, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Structural change during the formation of directly bonded silicon substrates
T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Material Assessment for uni-axial strained Ge pMOS -1: Characterization of GeSn(B) material 国際会議
B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, J. Demeulemeester, G. Eneman, T. Clarysse, W. Vandervorst, A. Vantomme, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo
International Workshop of GeSn Developments and Future Applications
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GeSn: future applications and strategy 国際会議
R. Loo, M. Caymax, B. Vincent, J. Dekoster, S. Takeuchi, O. Nakatsuka, S. Zaima, K. Temst, A. Vantomme
International Workshop of GeSn Developments and Future Applications
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(Si)GeSn requirements for optical device applications and solar cells 国際会議
S. Takeuchi, B. Vincent, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, S. Zaima
International Workshop of GeSn Developments and Future Applications
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Material Assessment for uni-axial strained Ge pMOS-2: Formation of Ni(GeSn) Layers with Solid-Phase Reactor 国際会議
T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima
International Workshop of GeSn Developments and Future Applications
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Bi-axially strained Ge grown on GeSn SRBs 国際会議
O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, and S. Zaima
International Workshop of GeSn Developments and Future Applications
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Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen 国際会議
K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, S. Zaima
5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
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Ge1-xSnx stressors for strained-Ge CMOS 国際会議
S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, S. Zaima,
5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
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Control of Strain Relaxation Behavior of Ge1-xSnx Layers: Toward Tensile-Strained Ge Layers with Strain Value over 1% 国際会議
Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
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Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems 国際会議
T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, S. Zaima
5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
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Crystalline Orientation Dependence of Electrical Properties on Mn Germanide/Ge(111) and (001) Schottky Contacts 国際会議
T. Nishimura, O. Nakatsuka, S. Zaima
Materials for Advanced Metallization Conference
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Strain Relaxation Behavior of Ge1-xSnx Buffer Layers on Si and Virtual Ge Substrates 国際会議
Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
5th International WorkShop on New Group IV Semiconductor Nanoelectronics, pp. 43-44, Sendai, Japan, Jan. 29-30, 2010.
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Control of Local Strain Structures by Microfabricated Shapes of Ge/Si1-xGex Layers 国際会議
K. Mochizuki, T. Mizutani, O. Nakatsuka, H. Kondo, S. Zaima
5th International WorkShop on New Group IV Semiconductor Nanoelectronics
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Potential of Ge1-xSnx alloys as high mobility channel materials and stressors 国際会議
S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
5th International WorkShop on New Group IV Semiconductor Nanoelectronics
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Microscopic characterization of Si(011)/Si(001) direct silicon bonding substrates 国際会議
T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata
5th International WorkShop on New Group IV Semiconductor Nanoelectronics