講演・口頭発表等 - 中塚 理
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Crystalline Properties of Ge1-xSnx Epitaxial Layers on Ge(110) 国際会議
T. Asano, M. Kurosawa, N. Taoka, O. Nakatsuka and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Control of Interfacial Reactions in Al2O3/Ge Structures 国際会議
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn) 国際会議
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Characterization of Local Strain around Trough Silicon Via Interconnects in Wafer-on-wafer Structures 国際会議
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba and S. Zaima
IEEE International 3D System Integration Conference 2011 (IEEE 3DIC 2011)
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Analysis of Strain Structures for Semiconductor Integrated Circuits with Micro Raman Spectroscopy 国際会議
O. Nakatsuka
The latest applications by the Modern Laser Raman Microscopy
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Materials Innovation in Si Nanoelectronics 国際会議
S. Zaima, O. Nakatsuka
2011 Tsukuba Nanotechnology Symposium (TNS'11)
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Electrical Properties of Ultrathin-Nickel-Silicide Schottky Diodes on Si (100) 国際会議
Y. Tamura, K. Kakushima, O. Nakatsuka, P. Ahmet, H. Nohira, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, and R. Yoshihara
15th The International Conference on Thin Films, 2011 (ICTF-15)
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Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure 国際会議
K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
15th The International Conference on Thin Films, 2011 (ICTF-15)
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Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-Oxide Film 国際会議
W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima
15th The International Conference on Thin Films, 2011 (ICTF-15)
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GeSn Technology: Impact of Sn on Ge CMOS Applications 国際会議
S. Zaima, O. Nakatsuka, Y. Shimura, M. Adachi, M. Nakamura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
220th The Electrochemical Society meeting (ECS 220th Meeting)
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Comprehensive Study of Local Strain Structures with High Strain Resolution for Through-Silicon Via Interconnects 国際会議
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
28th Annual Advanced Metallization Conference 2011 (AMC 2011)
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Control of Defect Properties in Ge Heteroepitaxial Layers by Sn Incorporation and H2-Annealing 国際会議
M. Adachi, Y. Shimura, O. Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials (SSDM 2011)
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Formation and Properties of Epitaxial NiGe/Ge(110) Contacts 国際会議
J. Yokoi, O. Nakatsuka, and S. Zaima,
International Conference on Solid State Devices and Materials (SSDM 2011)
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Strain and Dislocation Structures of Ge1-xSnx Heteroepitaxial Layers Grown on Ge(110) Substrates 国際会議
T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials (SSDM 2011)
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Strained Ge Layers on SiGe(Sn) Buffer Layers Formed by Solid-phase Mixing Method 国際会議
T. Yamaha, K. Mochizuki, Y. Shimura, O.Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials (SSDM 2011)
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Comprehensive Study of Local Strain Structures with High Strain Resolution for Through-Silicon Via Interconnects 国際会議
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
Advanced Metallization Conference 2011 (ADMETA plus 2011): 21st Asian Session
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Electrical and optical properties of GeSn alloys 国際会議
O. Nakatsuka, Y. Shimura, M. Adachi, M. Nakamura, and S. Zaima
2nd GeSnWorkshop: GeSn Development and Future Applications
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Improvement of Al2O3 Interfacial Properties by O2 Annealing 国際会議
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)
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Homogeneous Si0.5Ge0.5 Bulk Crystal Growth as Substrates for Strained Ge Thin Films by the Traveling Liquidus-Zone Method 国際会議
K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)
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Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates 国際会議
M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)