講演・口頭発表等 - 中塚 理
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Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer 国際会議
H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima
International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
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Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate 国際会議
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
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Epitaxial Growth of Ge1-xSnx Layers on (110)-oriented Si and Ge Substrates 国際会議
T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima
International Union of Materials Research Societies-International Conference on Electronic Materials 2012 (IUMRS-ICEM 2012)
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Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications 国際会議
O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima
University of Vigo and JSPS Core-to-Core Program Joint Seminar
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Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures 国際会議
Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
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Potential of GeSn Alloys for Application to Si Nanoelectronics 国際会議
S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, and O. Nakatsuka
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
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Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures 国際会議
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
CNSE and JSPS Core-to-Core Program Joint Seminar
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GeSn Alloy for Nanoelectronic and Optoelectronic Devices 国際会議
O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka and S. Zaima
CNSE and JSPS Core-to-Core Program Joint Seminar
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Epitaxial Growth and Characterization of GeSn Layers on Ge(110) and Si(110) Substrates 国際会議
T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka, S. Zaima
CNSE and JSPS Core-to-Core Program Joint Seminar
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Epitaxial Growth and Anisotropic Strain Relaxation of Ge1-xSnx Layers on Ge(110) Substrates 国際会議
T. Asano, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy 国際会議
B. Baert, D. Y. N. Truong, O. Nakatsuka, S. Zaima, and N. D. Nguyen
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Material properties and applications of Ge1-xSnx alloys for Ge Nanoelectronics 国際会議
O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents 国際会議
M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure 国際会議
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International SiGe Technology and Device Meeting 2012 (ISTDM 2012)
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Comprehensive Study of Local Strain Structures with High Strain Resolution for Through-Silicon Via Interconnects 国際会議
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
12th International Workshop on Stress-Induced Phenomena in Metallization
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Periodic Strain Undulation around Through Si Vias in Wafer-On-Wafer Structures 国際会議
N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba and S. Zaima
Materials for Advanced Metallization 2013 (MAM 2013)
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A comparative study of metal germanide formation on Ge1-xSnx 国際会議
J. Demeulemeester, A. Schrauwen, K. Van Stiphout, O. Nakatsuka, M. Adachi, Y. Shimura, S. Zaima, C. M. Comrie, C. Detavernier, K. Temst, and A. Vantommea
Materials for Advanced Metallization 2013 (MAM 2013)
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Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits 国際会議
N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Crystalline and Electrical Properties of Ni germanium/Ge(110) Contacts 国際会議
O. Nakatsuka, J. Yokoi, Y. Deng, N. Taoka and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Growth and Characterization of Ge1-x-ySixSny Epitaxial Layers for Solar Cell 国際会議
T. Yamaha, O. Nakatsuka, N. Taoka, W. Takeuchi and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar