研究者詳細 - 中塚理

講演・口頭発表等 - 中塚理

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界面層挿入が低仕事関数金属/n型4H-SiC界面のSBHに与える影響

土井拓馬, 柴山茂久, 坂下満男, 清水三聡, 中塚理

第68回応用物理学会春季学術講演会 2021年3月18日

Si(001)基板上におけるSi1−xSnx薄膜のエピタキシャル成長

黒澤昌志, 丹下龍志, 中塚理

第68回応用物理学会春季学術講演会 2021年3月18日

ウェット熱処理によるZrO2薄膜の強誘電相発現機構

柴山茂久, 永野丞太郎, 安坂幸師, 坂下満男, 中塚理

第68回応用物理学会春季学術講演会 2021年3月17日

高温堆積におけるZrO2薄膜結晶相の下地依存性

永野丞太郎, 柴山茂久, 坂下満男, 中塚理

第68回応用物理学会春季学術講演会 2021年3月16日

Heterostructure design favorable for n+-Ge1−xSnx pseudo-direct transition layer for optoelectronic application 招待有り国際会議

S. Zhang, M. Fukuda, S. Shibayama, and O. Nakatsuka

13th International Symposium on Advanced Plasma Scienceand its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science, (ISPlasma2021/IC-PLANTS2021)

Epitaxial growth of strain‐relaxed and high-Sn-content n-Ge1-xSnx on Si(111) substrate with Ge buffer layer 招待有り国際会議

A. Huang, S. Shibayama, and O. Nakatsuka

The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT)

HfO2-ZrO2系の強誘電相発現におけるウェット熱処理の効果

柴山茂久, 永野丞太郎, 坂下満男, 中塚理

応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第26回） 2021年1月23日

低仕事関数金属/4H-SiC界面におけるMIGSの影響

土井拓馬, 柴山茂久, 坂下満男, 清水三聡, 中塚理

応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第26回） 2021年1月26日

低仕事関数金属を用いたn型4H-SiCに対する低ショットキー障壁コンタクトの実現

土井拓馬, 柴山茂久, 坂下満男, 清水三聡, 中塚理

先進パワー半導体分科会第7回講演会 2021年1月22日

GeSn系Ⅳ族混晶半導体の創製と結晶・電子物性制御招待有り

中塚理

第5回TIA-EXA広域エレクトロニクス融合セミナー～革新デバイスに向けた新材料と集積技術～ 2020年12月9日

Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り国際会議

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020)

Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate By Chemical Vapor Deposition using Single Precursor of Vinylsilane 国際会議

T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka

Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020)

Understanding wet annealing effect on phase transition and ferroelectric phase formation for Hf1-xZrxO2 film 国際会議

S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

2020 Inthernational Conference on Solid State Devices and Materials (SSDM2020)

コンタクト抵抗率低減のための金属/IV族半導体界面制御技術招待有り

中塚理, 柴山茂久, 坂下満男

第84回半導体・集積回路技術シンポジウム

Ge1-xSnx溶融成長時に生じる偏析現象の理解

中尾天哉, 西島泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会

多層ゲルマナンフレークからの水素脱離

伊藤麻維, 洗平昌晃, 大田晃生, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会 2020年9月9日

GaAs(001)基板上におけるGe1−x−ySixSny薄膜のエピタキシャル成長

中田壮哉, 詹天卓, 富田基裕, 渡邉孝信, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会 2020年9月9日

絶縁膜上における極薄Ge薄膜の固相成長

大石遼, 黒澤昌志, 中塚理

第81回応用物理学会秋季学術講演会 2020年9月9日

GeSn系IV族混晶ヘテロ構造の結晶成長と光電物性制御招待有り

中塚理

阪大CSRN 第二回異分野研究交流会「半導体・ナノカーボン系」 2020年8月28日

In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity 国際会議

M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka

The 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)

Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices 招待有り国際会議

O. Nakatsuka, M. Kurosawa, S. Shibayama, and M. Sakashita, S. Zaima

The 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)

Ferroelectric Phase Evolution of Undoped ZrO2 Thin Film by Wet O2 Annealing Process 国際会議

S. Shibayama, J. Nagano, M. Sakashita, O. Nakatsuka

2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF2019)

Saturation of Activated Sb Atom in Heavily Sb-Doped Ge Epitaxial Thin Films 国際会議

J. Jeon, S. Shibayama, S. Zaima, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)

Thermoelectric properties of silicon germanium wires with a composition gradient 国際会議

M. Nakata, O. Nakatsuka, M. Tomita, T. Watanabe, and M. Kurosawa

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)

Theoretical Investigation of Self-organization Behavior of Si0.5Sn0.5 Nano-particles 国際会議

Y. Nagae, M. Kurosawa, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)

Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface 国際会議

T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)

Optoelectronic Property of GeSn and GeSiSn Heterostructure 国際会議

M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)

Improvement of thermoelectric properties of Si1-x-yGexSny thin films by ion implantation and rapid thermal annealing 国際会議

Y. Peng, L. Miao, M. Kurosawa, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)

Model development of MOCVD growth for realizing high-Sn-content Ge1-xSnx epitaxial layer ~ What physical properties are required for precursors? ~ 国際会議

Y. Miki, S. Shibayama, S. Zaima, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)

Saturation of Sb1+ Concentration in Heavily Sb-doped n+-Ge Epitaxial Layers 国際会議

J. Jeon, S. Shibayama, and O. Nakatsuka

Advanced Metallization Conference 2019: 29th Asian Session (ADMETA Plus 2019)

Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si1-xSnx Layers Grown on Insulators 国際会議

K. Sato, O. Nakatsuka, and M. Kurosawa

2019 International Conference on Solid State Devices and Materials (SSDM 2019)

Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET 国際会議

W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, and O. Nakatsuka

2019 International Conference on Solid State Devices and Materials (SSDM 2019)

In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks 国際会議

T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

2019 International Conference on Solid State Devices and Materials (SSDM 2019)

Strain Relaxation Enhancement of Ge1-x-ySixSny Epitaxial Layer on Ge Substrate Using Ion-Implantation Method 国際会議

H. Sofue, M. Fukuda, S. Shibayama, S. Zaima, and O. Nakatsuka

2019 International Conference on Solid State Devices and Materials (SSDM 2019)

Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiCxOy Interlayer 国際会議

K. Hashimoto, T. Doi, S. Shibayama, and O. Nakatsuka

2019 International Conference on Solid State Devices and Materials (SSDM 2019)

GeSn and GeSiSn Heterostructures for Optoelectronic Applications 招待有り国際会議

O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima

2019 IEEE Photonics Society Summer Topicals Meeting Series

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 国際会議

K. Senga, S. Shibayama, M. Sakashita, S. Zaima, and O. Nakatsuka

19th International Workshop on Junction Technology 2019 (IWJT2019)

Development and challenges of group-IV alloy semiconductors for nanoelectronic applications 招待有り国際会議

S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama

The Eleventh International Conference on High-Performance Ceramics (CICC-11)

Tin-incorporation effect on thermoelectric properties of p-type polycrystalline Si1-xGex layers grown on SiO2 国際会議

Y. Peng, L. Miao, J. Gao, M. Kurosawa, O. Nakatsuka, and S. Zaima

The Eleventh International Conference on High-Performance Ceramics (CICC-11)

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny QuantumWell Structures 国際会議

G. R. Suwito, M. Fukuda, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

Compoud Semiconductor Week 2019 (CSW 2019)

Formation of Strain-relaxed Ge1-x-ySixSny Epitaxial Layer using Ionimplanted Ge Substrate 国際会議

H. Sofue, M. Fukuda, S. Shibayama, O. Nakatsuka, and S. Zaima

11th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 12th International Conference on Plasma-Nano Technology and Science (ISPlasma 2019 / IC-PLANTS 2019)

GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications 招待有り国際会議

O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics

Formation of Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure with Ultra-Low Contact Resistivity 国際会議

J. Jeon, A. Suzuki, S. Shibayama, O. Nakatsuka, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics

Study of factors to limit increasing Sn content in Ge1-xSnx for MOCVD method 国際会議

Y. Miki, W. Takeuchi, S. Shibayama, O. Nakatsuka, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics

Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure 国際会議

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)

Thermoelectric Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Layer Prepared with Ion Implantation 国際会議

Y. Peng, M. Kurosawa, O. Nakatsuka, L. Miao, J. Gao, and S. Zaima

14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)

Impact of Crystalline Property of SixGe1-x-ySny Ternary Alloy Interlayer on Schottky Barrier Height Engineering of Metal/Ge Contact 国際会議

O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima

Advanced Metallization Conference 2018: 28th Asian Session (ADMETA Plus 2018)

Composition and Strain Engineering of New Group-IV Thermoelectric Materials 招待有り国際会議

M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

AiMES 2018 Meeting

Formation of laterally graded SixGe1-x stripes for thermoelectric generator 国際会議

M. Nakata, K. Takahashi, T. Nishijima, S. Shimizu, I. Tsunoda, O. Nakatsuka, S. Zaima, T. Watanabe, and M. Kurosawa

The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)

Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2018 International Conference on Solid State Devices and Materials (SSDM 2018)

Impact of Oxygen Radical Treatment on Improvement of Al2O3/SiC Interface 国際会議

T. Doi, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

2018 International Conference on Solid State Devices and Materials (SSDM 2018)

Thin Film Growth and Characterization of Group-IV Alloy Semiconductors for Future Nanoelectronic Applications 招待有り国際会議

O. Nakatsuka, M. Kurosawa, and S. Zaima

The 9th International Conference on Physics and Its Applications (ICOPIA)

Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films 招待有り国際会議

O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima

IEEE Photonics Society Summer Topical Meeting Series 2018

Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

European Materials Research Society (2018 E-MRS Spring Meeting)

GeSn-based thin film thermoelectric generators 招待有り国際会議

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018)

Formation of Ultra-Low Resistance Contact with Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure 国際会議

J. Jihee, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima

1st Joint Conference ICSI / ISTDM 2018

Ultra-thin GeSn on Insulator structure through the direct bonding technique 国際会議

T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida

1st Joint Conference ICSI / ISTDM 2018

Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer 国際会議

M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

1st Joint Conference ICSI / ISTDM 2018

Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates 国際会議

Y. Imai, K. Takahashi, N. Uchida, T. Maeda, O. Nakatsuka, S. Zaima, and M. Kurosawa

The 2nd Electron Devices Technology and Manufacturing (EDTM 2018)

Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator 国際会議

K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

The 2nd Electron Devices Technology and Manufacturing (EDTM 2018)

Heavily p-type Doping to Si1-xSnx Layers Grown on SOI Substrates 国際会議

Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 11th International Conference on Plasma-Nano Technology and Science (ISPlasma 2018 / IC-PLANTS 2018)

Growth of Ge1-xSnx Layer by Metal-organic Chemical Vapor Deposition Method using Tetrakis Dimethylamino Tin 国際会議

Y. Miki, W. Takeuchi, O. Nakatsuka, and S. Zaima

Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

11th International WorkShop on New Group IV Semiconductor Nanoelectronics

Low-Temperature Chemical Vapor Deposition of SiC Thin Film Using Vinylsilane for Metal Surface Coating 国際会議

T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka, and S. Zaima

11th International WorkShop on New Group IV Semiconductor Nanoelectronics

Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators 招待有り国際会議

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

The 2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017)

Energy Band Structure of Ga-oxide/GaN Interface Formed by Remote O2 Plasma 国際会議

T. Yamamoto, N. Taoka, A. Ohta, T. X. Nguyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, O. Nakatsuka, M. Shimizu, and S. Miyazaki

2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF)

Characterization of Defects in Ge1-xSnx Gate Stack Structure 国際会議

Y. Kaneda, S. Ike, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF)

Development of GeSn-Related Group-IV Semiconductor Thin Films for Future Si Nanoelectronic Applications 招待有り国際会議

S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita

the 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017)

GeSn and related group-IV alloy thin films for future Si nanoelectronics 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima

The Tenth International Conference on High-Performance Ceramics (CICC-10)

Crystalline and electrical properties of epitaxial HfGe2/Ge contact for lowering Schottky barrier height 国際会議

O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima

Advanced Metallization Conference 2017: 27th Asian Session (ADMETA Plus 2017)

Growth and Applications of Si1-xSnx Thin Films 招待有り国際会議

M. Kurosawa, O. Nakatsuka, and S. Zaima

The 232th Electrochemical Society Meeting (232nd ECS MEETING)

Numerical calculation of energy band offset of Si1-xSnx by density functional calculation 国際会議

Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima

The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2)

Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2)

Control of Electrical Property at Metal/Ge Interface with Group-IV Alloy Interlayer 国際会議

A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)

Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure 国際会議

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)

Strain measurement of simulated finFET structures of Ge and GeSn prepared by MOCVD 国際会議

K. Saitoh, S. Ou, S. Ike, O. Nakatsuka and, S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)

Thermal Stability Study of in-situ Sb-Doped n- Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors 国際会議

J. Jeon, A. Suzuki, O. Nakatsuka and, S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)

Fabrication and Thermoelectric Mechanism Study of Flexible Si1-xGex Superlattice Films 国際会議

Y. Peng, L. Miao, C. Li, R. Huang, D. Urushihara, T. Asaka, M. Kurosawa, O. Nakatsuka, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)

Sb-doping effect on thermal and electrical properties of Ge-rich Ge1-xSnx layers 国際会議

T. Iwahashi, M. Kurosawa, N. Uchida, Y. Ohishi, T. Maeda, O. Nakatsuka, and S. Zaima

2017 International Conference on Solid State Devices and Materials (SSDM 2017)

Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

2017 International Conference on Solid State Devices and Materials (SSDM 2017)

Synthesis of p- and n-type Ge1-xSnx Thin Films toward New Group-IV Thermoelectric Materials 国際会議

M. Kurosawa, Y. Imai, T. Iwahashi, A. Ohta, N. Uchida, Y. Ohishi, T. Maeda, O. Nakatsuka, and S. Zaima

36th Annual International Conference on Thermoelectrics (2017 ICT)

Characterization of energy band structure of Si1-x-ySnxCy ternary alloy layers prepared with solid-phase crystallization 国際会議

S. Yano, O. Nakatsuka, C. Lim, M. Sakashita, M. Kurosawa, and S. Zaima

29th International Conference on Defects in Semiconductors (ICDS 2017)

Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic applications 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017)

Formation of Epitaxial Hf Germanide/Ge Contacts for Schottky Barrier Height Engineering 国際会議

O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima

17th International Workshop on Junction Technology 2017 (IWJT 2017)

Development of GeSn and related semiconductor thin films for next generation optoelectronic applications 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2017 Global Conference on Polymer and Composite Materials (PCM 2017)

Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer 国際会議

A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)

Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure 国際会議

M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)

Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)

Solid phase epitaxy of Si1-xSnx layers on various substrates 国際会議

M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)

Epitaxial growth of n+-Ge1-xSnxlayerswith in situ phosphorus doping using low-temperature metal-organic chemical vapor deposition method 国際会議

S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)

Formation of SiC and SiCN Films by Chemical Vapor Deposition using Vinylsilane 国際会議

T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka and S. Zaima

9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2017 / IC-PLANTS 2017)

Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition 国際会議

W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and , S. Zaima

Selective Growth of Ge1-xSnx Epitaxial Layer on Patterned Si Substrate using Metal-organic Chemical Vapor Deposition Method 国際会議

T. Washizu, S. Ike, W. Takeuchi, O. Nakatsuka, S. Zaima

Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained GeTransistors 国際会議

J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima

Electron Devices Technology and Manufacturing Conference (EDTM 2017)

Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties 招待有り国際会議

W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack 国際会議

Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates 国際会議

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

In situ phosphorus doping of Ge and Ge1-xSnx epitaxial layers by low-temperature metal-organic chemical vapor deposition 国際会議

S. Ike, W. Takeuchi, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Growth of Si1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates 国際会議

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"

Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water 国際会議

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"

Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers 国際会議

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"

Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy 国際会議

The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium)

Microwave Annealing for Low-Thermal Budget Process of Nickel Monogermanide/Germanium Contact Formation 国際会議

Advanced Metallization Conference 2016: 26th Asian Session (ADMETA Plus 2016)

Low Temperature Crystallization of SiSn Binary Alloys 招待有り国際会議

The 1st International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-1)

Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures By Using Synchrotron X-Ray Microdiffraction 国際会議

Pacific Rim Meeting 2016 Joint The 230th Electrochemical Society Meeting (PRiME 2016/230th ECS Meeting)

Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition 国際会議

2016 International Conference on Solid State Devices and Materials (SSDM 2016)

Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor 国際会議

2016 International Conference on Solid State Devices and Materials (SSDM 2016)

Investigation of effects of inner stress with Sn incorporation on energy band of Si1-xSnx using density functional theory and photoelectron spectroscopy 国際会議

2016 International Conference on Solid State Devices and Materials (SSDM 2016)

Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water 国際会議

2016 International Conference on Solid State Devices and Materials (SSDM 2016)

Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact 国際会議

2016 International Conference on Solid State Devices and Materials (SSDM 2016)

Challenges in Engineering Materials Properties for GeSn Nanoelectronics 招待有り国際会議

The 2016 European Materials Research Society (E-MRS) Fall Meeting

Low-Temperature Selective Epitaxial Growth of Ge on Si by using Metal Organic Chemical Vapor Deposition 国際会議

The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)

Growth and applications of GeSn-related group-IV semiconductor materials 招待有り国際会議

IEEE 2016 Summer Topicals Meeting Series

Control of the Fermi level pinning position at metal/Ge interface by using Ge1-xSnx interlayer 国際会議

7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)

Direct Measurement of Anisotropic Local Strain in Ge Nanostructures Strained with MOCVD-grown Ge1-xSnx by using Microdiffraction 国際会議

7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)

Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration 国際会議

7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)

Effect of local and global strain on thermal stability of Sn in GeSn based film 国際会議

7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)

Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices 国際会議

7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)

Formation and Characterization of GeSiSn/GeSn/GeSiSn Double-Heterostructure with Strain-controlled GeSiSn layer 国際会議

7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)

Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate 国際会議

7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)

Development of GeSn thin film technology for electronic and optoelectronic applications 招待有り国際会議

2016 Energy Materials Nanotechnology (EMN) Summer Meeting and Photodetectors Meeting

International collaboration: the path to breakthroughs in (Si)GeSn material development 国際会議

12th International Nanotechnology Conference on Communication ans Cooperation (INC12)

Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties 国際会議

8th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 9th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2016)

Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property 国際会議

Structural and Electrical Properties of Low Temperature CVD-Grown SiGe Epitaxial Layers 国際会議

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers 国際会議

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers 国際会議

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping 国際会議

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties 国際会議

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer 国際会議

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Strain measurement of heteroepitaxial GeSn/Ge with a finFET structure 国際会議

K. Saitoh, K. Doi, N. Tanaka, S. Ike, O. Nakatsuka, S. Zaima

International Symposium on EcoTopia Science 2015 (ISETS '15)

Schottky Barrier Engineering by Epitaxial Metal Germanide/Germanium Contacts 国際会議

International Symposium on EcoTopia Science 2015 (ISETS '15)

X-ray Microdiffraction Characterization of Local Strain Distribution in GeSn/Ge Nanostructures 国際会議

International Symposium on EcoTopia Science 2015 (ISETS '15)

Silicon-tin semiconductors for near-infrared optoelectronic device applications 国際会議

International Symposium on EcoTopia Science 2015 (ISETS '15)

Calculation of Si1-xSnx Energy Band Structures by using Density Functional Theory Considering Atomic Configuration 国際会議

International Symposium on EcoTopia Science 2015 (ISETS '15)

Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions 国際会議

International Symposium on EcoTopia Science 2015 (ISETS '15)

Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer 国際会議

International Symposium on EcoTopia Science 2015 (ISETS '15)

Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping 国際会議

International Symposium on EcoTopia Science 2015 (ISETS '15)

Recent Progress of Silicon Tin Alloys for Advanced Semiconductor Devices 国際会議

M. Kurosawa, O. Nakatsuka, and S. Zaima

International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015)

Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications 国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015)

Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack 国際会議

M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)

Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy 国際会議

Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima

2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)

Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits 招待有り国際会議

S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita

The 228th Electrochemical Society Meeting

Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform 招待有り国際会議

S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi and M. Sakashita

2015 International Conference on Solid State Devices and Materials (SSDM 2015)

Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface 国際会議

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima

2015 International Conference on Solid State Devices and Materials (SSDM 2015)

Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer 国際会議

J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka and S. Zaima

2015 International Conference on Solid State Devices and Materials (SSDM 2015)

Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge 国際会議

W. Takeuchi, K. Yamamoto, M. Sakashita, T. Kanemura, O. Nakatsuka and S. Zaima

2015 International Conference on Solid State Devices and Materials (SSDM 2015)

Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects 国際会議

S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka and S. Zaima

2015 International Conference on Solid State Devices and Materials (SSDM 2015)

Crystalline Structure and Chemical Reaction of Ti Thin Layer on Highly Oriented Pyrolytic Graphite 国際会議

O. Nakatsuka, K. Hisada, S. Oida, A. Sakai, and S. Zaima

Advanced Metallization Conference 2015: 25th Asian Session (ADMETA Plus 2015)

Characterization of Deep-level Defects in Epitaxial Ge1-xSnx/Ge structure 招待有り国際会議

W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima

JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration

Reduction of Schottky barrier height with Sn/Ge contact 国際会議

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, S. Zaima

JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration

Development of polycrystalline Sn-related group-IV semiconductor thin films - Aiming for 3D-IC 招待有り国際会議

M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)

Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

15th International Workshop on Junction Technology 2015 (IWJT 2015)

Formation of type-I energy band alignment of Ge1-x-ySixSny/Ge hetero structure 国際会議

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)

Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices 国際会議

M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)

Characterization of Crystallinity of Ge1-xSnx Epitaxial Layers Grown by using Metal-Organic Chemical Vapor Deposition 国際会議

Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima

The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)

Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers 国際会議

T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)

Solid Phase Epitaxy of High Sn Content Si1-xSnx layer (x>0.2) on Ge Substrates for Optical Communication Applications 国際会議

M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)

Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer 国際会議

W. Takeuchi, T. Asano, M. Sakashita, O. Nakatsuka, S. Zaima

7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference on Plasma-Nano Technology and Science (ISPlasma 2015 / IC-PLANTS 2015)

Solid phase epitaxy of Ge1-x-ySnxCy ternary alloy layers 国際会議

H. Oda, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

Crystal growth of Si1-xSnx alloys with high Sn contents 国際会議

M. Kurosawa, M. Kato, Y. Nagae, T. Yamaha, O. Nakatsuka and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Photoluminescence Property of Ge1-xSnx Epitaxial Layers Grown on Ge(001) substrates 国際会議

T. Asano, K. Hozaki, T. Koyama, N. Taoka, O. Nakatsuka, H. Kishida and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Behaviors of tin related defects in Sb doped n-type germanium 国際会議

W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Crystalline and Optical Properties of Ge1-x-ySixSny Ternary Alloy Layers for Solar Cell Application 国際会議

T. Yamaha, S. Asaba, T. Terashima, T. Asano, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Formation of strain-free Si1-x-yGexSny layers on Ge surfaces by using solid-liquid coexisting annealing 国際会議

M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Epitaxial Growth of Ge1-xSnx Thin Films by using Metal-Organic Chemical Vapor Deposition 国際会議

Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Growth and Characterization of Si1-x-ySnxCy Ternary Alloy Thin Films for Solar Cell Application 国際会議

T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima

The 6th World Conferenceon Photovoltaic Energy Conversion (WCPEC-6)

Development of metal/Ge contacts for engineering Schottky barriers 国際会議

O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"

Hydrogen Surfactant Epitaxy of Ge1-xSnx Layers 国際会議

T. Asano, N. Taoka, K. Hozaki, W. Takeuchi,M. Sakashita, O. Nakatsuka, and S. Zaima

JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"

Growth and Characterization of Ternary Alloy Ge1-x-ySnxCy Layers 国際会議

T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"

Study of Local Strain Distribution in Ge1-xSnx/Ge Fine Structure by using Synchrotron X-ray Microdiffraction 国際会議

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"

Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height 国際会議

O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima

Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd International Workshop on Advanced Packaging & System Technology (IWAPS)

Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates 国際会議

A. Suzuki, D. Yunsheng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd International Workshop on Advanced Packaging & System Technology (IWAPS)

Poly & Epitaxial Crystallization of Silicon-tin Binary Alloys for Future Optoelectronics 国際会議

M. Kurosawa, M. Kato, K. Takahashi, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

16th International Conference on Thin Films (ICTF16)

Challenges and Developments in GeSn Process Technology for Si Nanoelectronics 招待有り国際会議

S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita

226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting

Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates 招待有り国際会議

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima

226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint International Meeting

Operations of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC 国際会議

Y. Kamata, M. Koike, E. Kurosawa, M. Kurosawa, H. Ota, O. Nakatsuka, S. Zaima and T. Tezuka

2014 International Conference on Solid State Devices and Materials (SSDM 2014)

Growth of Two Inch Si0.5Ge0.5 Bulk Single Crystals 国際会議

K. Kinoshita, Y. Arai, O. Nakatsuka, K. Taguchi, H. Tomioka, R. Tanaka and S. Yoda

2014 International Conference on Solid State Devices and Materials (SSDM 2014)

Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers 国際会議

T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

2014 International Conference on Solid State Devices and Materials (SSDM 2014)

Formation and Energy Band Engineering of Ternary Alloy Ge1-x-ySnxCy Layers 国際会議

T. Yamaha, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

2014 International Conference on Solid State Devices and Materials (SSDM 2014)

Electrically Active Defects in GeSnSi/Ge Junctions Formed at Low Temperature 国際会議

N. Taoka, T. Asano, T. Yamaha, T. Terashima, S. Asaba, O. Nakatsuka, P. Zaumseil, G. Capellini, T. Schroeder and S. Zaima

2014 International Conference on Solid State Devices and Materials (SSDM 2014)

Sub-300C fabrication of poly-GeSn junctionless tri-gate p-FETs enabling sequential 3D integration of CMOS circuits 国際会議

M. Kurosawa, Y. Kamata, H. Ikenoue, N. Taoka, O. Nakatsuka, T. Tezuka and S. Zaima

2014 International Conference on Solid State Devices and Materials (SSDM 2014)

Mobility behavior of Si1-x-yGexSny polycrystals grown on insulators 国際会議

T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)

Transformation of Defects Structure in Germanium by Sn Ion Implantation 国際会議

W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)

Crystalline Growth and Characterization of Group-IV Ternary Alloy Thin Films for Solar Cell 国際会議

T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Grand Renewable Energy 2014 International Conference and Exhibition

Low temperature growth of SiSn polycrystals with high Sn contents on insulating layers 国際会議

M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

International SiGe Technology and Device Meeting 2014 (ISTDM 2014)

Impact of Sn incorporation on low temperature growth of polycrystalline-Si1-xGex layers on insulators 国際会議

T. Yamaha, T. Ohmura, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

International SiGe Technology and Device Meeting 2014 (ISTDM 2014)

Epitaxial growth and crystalline properties of Ge1-x-ySixSny Layers on Ge(001) Substrates 国際会議

T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

International SiGe Technology and Device Meeting 2014 (ISTDM 2014)

Crystal growth of Sn-related group-IV alloy thin films for advanced silicon nanoelectronics 国際会議

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, and W. Takauchi

International SiGe Technology and Device Meeting 2014 (ISTDM 2014)

Growth and crystalline properties of Ge1-x-ySnxCy ternary alloy thin films on Ge(001) substrate 国際会議

K. Terasawa, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, E. Kamiyama, R. Matsutani, R. Suwa, K. Kashima, K. Izunome, K. Sueoka, and S. Zaima

International SiGe Technology and Device Meeting 2014 (ISTDM 2014)

Impact of crystalline structure on electrical property of NiGe/Ge contact 国際会議

Y. Deng, O. Nakatsuka, N. Taoka, S. Zaima

International SiGe Technology and Device Meeting 2014 (ISTDM 2014)

Formation and Electrical Properties of Metal/Ge1-xSnx Contacts 国際会議

O. Nakatsuka, T. Nishimura, A. Suzuki, K. Kato, Y. Deng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

14th International Workshop on Junction Technology (IWJT 2014)

Strain Distributions at Edge of Corner in Bonded Si in Chip-on-Wafer Structures 国際会議

N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima

Materials for Advanced metallization (MAM 2014)

Formation and Electrical Property of Epitaxial NiGe/Ge(110) Schottky Contacts 国際会議

Y. Deng, O. Nakatsuka, N. Taoka and S. Zaima

7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar

Sn-assisted low temperature crystallization of polycrystalline Ge1-xSnx thin-films on insulating surfaces 国際会議

M. Kurosawa, T. Yamaha, W. Takeuchi, N. Taoka, O. Nakatsuka, H. Ikenoue, and S. Zaima

7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar

Substrate Orientation Dependence of Crystalline Structures of Epitaxial GeSn Layers 国際会議

T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka and S. Zaima

7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar

Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method and Fabrication of Strained Ge Layer 国際会議

T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda and S. Zaima

7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar

Sn-related Group-IV semiconductor materials for electronic and optoelectronic applications 国際会議

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

3rd international Conference on Nanotek and Expo (Nanotek-2013)

Development of Ge1-xSn and Ge1-x-ySixSny thin film materials for future electronic applications 国際会議

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima

8th International Conference on Processing & Manufacturing of Advanced Materials (THERMEC' 2013)

Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density 国際会議

S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima

2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF 2013)

Robustness of Sn Precipitation During Thermal Process of Ge1-xSnx 国際会議

K. Kato, T. Asano, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima

2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF 2013)

Interface Properties of Al2O3/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD 国際会議

T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, S. Zaima

2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF 2013)

Heteroepitaxial Growth of Sn-Related Group-IV Materials On Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities 国際会議

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita and S. Zaima

The 224th Electrochemical Society Meeting

Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface 国際会議

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

The 224th Electrochemical Society Meeting

Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by using Microdiffraction Method 国際会議

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

The 224th Electrochemical Society Meeting

Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate 国際会議

N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration -

Stabilization for Higher-k Films with Meta-Stable Crystalline Structure 国際会議

K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration -

Fluctuation of Lattice Spacing around Trough Si Vias in Wafer -on -wafer Structures 国際会議

N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima

Advanced Metallization Conference 2013 (AMC 2013) 30th Edition

Formation and Crystalline Structure of Ni Silicides on Si(110) Substrate 国際会議

O. Nakatsuka, M. Hasegawa, K. Kato, N. Taoka, and S. Zaima

Advanced Metallization Conference 2013:23rd Asian Session (ADMETA Plus 2013)

Fluctuation of Lattice Spacing around Trough Si Vias in Wafer -on -wafer Structures 国際会議

N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima

Advanced Metallization Conference 2013:23rd Asian Session (ADMETA Plus 2013)

Thermal Stability of Epitaxial NiGe Layers Formed on Ge(110) Substrate 国際会議

Y. Deng, O. Nakatsuka, N. Taoka, and S. Zaima

Advanced Metallization Conference 2013:23rd Asian Session (ADMETA Plus 2013)

Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode 国際会議

A. Suzuki, S. Asaba, J. Yokoi, O. Nakatsuka, M. Kurosawa, K. Kato, M. Sakashita, N. Taoka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013)

Engineering of Energy Band Structure with Epitaxial Ge1-x-ySixSny/n-Ge Hetero Junctions for Solar Cell Applications 国際会議

S. Asaba, T. Yamaha, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013)

Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate 国際会議

T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013)

Large grain growth of poly-GeSn on insulator by pulsed laser annealing in water 国際会議

M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013)

Strain Undulation around Through Si Vias in Wafer-On-Wafer Structures 国際会議

N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba and S. Zaima

2nd international Workshop Advanced Packaging & System Technology (IWAPS 2013)

Function of Additional Element Incorporation for Tetragonal ZrO2 Formation 国際会議

K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

NIMS Conference 2013 -Structure Control of Atomic/Molecular Thin Films and Their Applications-

Crystalline Structures and Electrical Property of Epitaxial Ni Germanide Layers Formed on Ge(110) Substrate 国際会議

Y. Deng, J. Yokoi, O. Nakatsuka, N. Taoka, S. Zaima