Presentations -
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Electron-Spin-Resonance Investigation on Solid Surfaces Irradiated by Fluorocarbon Plasma International conference
25th International Conference on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a34, p. 87.
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Early-stage modification of silicon oxide surface in fluorocarbon plasma for selective etching over silicon International conference
47th International Symposium American Vacuum Society (AVS), (Boston, MA, October 2-6, 2000), PS-MoM4, p. 6.
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An in-situ time-resolved infrared spectroscopic study of silicon dioxide surface during selective etching over silicon using fluorocarbon plasma International conference
Microprocess and Nanotechnology Conference (MNC), (Tokyo, July 11-13, 2000), 13B-9-3, pp. 270-271.
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Early Stage of Native Oxide Growth on an Atomically Flat Hydrogen Terminated Si(111) Surface International conference
Proc. 3rd Intern. Symp. Ultra Clean Processing of Silicon Surface (UCPSS 96), edited by M. Heyns, (Acco Leuven/Amersfoort, 1996), pp. 273-278.
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Thickness-Deconvolved Structural Properties of Thermally Grown Silicon Dioxide Film International conference
26th IEEE Semiconductor Interface Specialist Conf. (SISC 95), (Charleston, South Carolina, December 7-9, 1995), P1.2.
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Thickness-Deconvolved Structural Properties of Thermally Grown Silicon Dioxide Film International conference
Ext. Abst. of the 1995 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Osaka, August 21-24, 1995), PA-1-8, pp. 500-502.
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In-situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces International conference
Ext. Abst. of the 1995 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Osaka, August 21-24, 1995), S-1-1-2, pp.13-15.
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Study on Reaction of Fluorine Radicals with Si(111) Surface Employing an In-situ Combinated of ATR and XPS International conference
8th Intern. Micro Process Conf., (Sendai, July 17-20, 1995), pp. 170-171.
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Contribution of Si/SiO2 Interface Roughness in the Observation of Chemical Structure International conference
Ext. Abst. of the 1994 Intern. Conf. on Solid State Devices and Mater.(SSDM), (Yokohama, August 23-26, 1994), C-8-5, pp. 850-852.
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Effects of Dissolved Oxygen in HF solution on Silicon Surface Morphology International conference
Ext. Abst. of the 1994 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Yokohama, August 23-26, 1994), pp. 437-439.
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New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectorscopy (IR-RAS) International conference
1993 Fall Meeting of the Material Research Society (MRS), Proc. 318 (Boston, November 28-December 5, 1993), pp. 425-430.
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FT-IR-RAS Analysis of Native Oxide Grown on Si(111) International conference
S. Fujimura, H. Ogawa, K. Ishikawa, C. Inomata, and H. Mori
Ext. Abst. of the 1993 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Makuhari, August 29-September 1, 1993), pp.618-620.