Presentations -
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Porous SiOCH Low-k Film Etch Process and its Surface Reactions Employing an Alternative Fluorocarbon Gas C5F10O
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Modeling of Radical Tranformation under `PAPE' Structure and Method of Estimation for Surface Loss Probabilities of Radicals
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Measurement of H Radical Density in H2/Ar Nonequilibrium Atmospheric Pressure Plasma
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Surface Loss Probabilities of H Atom on Various Silicon Thin Films
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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A Well-Established Compact Combinatorial Etching Process Employing Inductively Coupled H2/N2 Plasma
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Nanoscale engineering for plasma etching of future device fabrication International conference
The 10th International Workshop of Advanced Plasma Processing and Diagnostics
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A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site International conference
2008 IEEE International Electron Devices Meeting (IEDM), (San Francisco, U.S.A., December 15-17, 2008), 18-2, pp. 443-447.
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Enhancing Yield and Reliability by Applying Dry Organic Acid Vapor Cleaning to Copper Contact Via-Bottom for 32-nm Nodes and Beyond International conference
The 11th International Interconnect Technology Conference (IITC) 2008, (San Francisco, June 10-12, 2008), pp. 93-96.
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Reaction mechanism of low-temperature damageless cleaning of Cu2O by HCOOH International conference
Advanced Metallization Conference (AMC) 2006: 16th Asian Session, (Tokyo, September 25-27, 2006), No. 3-6, pp. 111-116.
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Large Reduction in Standby Power Consumption Achieved with Stress-controlled SRAM Cell Layout International conference
Ext. Abst. the 2006 International conference on Solid State Devices and Materials (SSDM), (Yokohama, Japan, September 12-15, 2006), H-2-2, pp. 172-173.
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Reduction of Copper Surface with Formic Acid for 32-nm-Node ULSI Metallization: Surface Kinetics Study International conference
The 209th Electrochemical Society Spring Meeting (ECS) (Colorado, U.S.A., May 7-12, 2006), vol. 601, p. 828.
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Plasma emission irradiation effects on etching surface reactions: Analysis using in-vacuo electron-spin-resonance technique International conference
International conference on reactive plasmas and Symposium on Plasma processing (ICRP 6/SPP 23), (Sendai, Japan, January 24-27, 2006), P-2A-38, p. 467.
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Structural damage of diamond by oxygen ion beam exposure International conference
International conference on reactive plasmas and Symposium on Plasma processing (ICRP 6/SPP 23), (Sendai, Japan, January 24-27, 2006), G-3A-5, p. 91.
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Vacuum-ultraviolet photon irradiation effects in fluorocarbon plasmas on SiO2 etching surface reactions using In vacuo electron-spin-resonance
AVS 52nd International Symposium American Vacuum Society (AVS), (Boston, MA, U. S. A., October 31-November 4, 2005), PS-TuA6, p.97.
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Low temperature dry cleaning technology using formic acid in Cu/Low-k multilecel interconnects for 45 nm node and beyond International conference
Advanced Metallization Conference (AMC) 2005, (Colorado, U. S. A., September 27-29, 2005), pp. 569-574.
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Efficient reduction of standby leakage current in LSIs for use in mobile devices International conference
Ext. Abst. the 2005 International conference on Solid State Devices and Materials (SSDM), (Kobe, September 13-15, 2005), pp. 878-879.
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Defect creation in diamond by hydrogen plasma treatment at room temperature International conference
23rd International Conference on Defects in Semiconductors (ICDS-23), (Hyogo, Japan, July 24 -29, 2005), Th-P17, p. 290.
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Structural change in diamond by hydrogen plasma treatment at room temperature International conference
10th International Conference New Diamond Science and Technology (ICNDST-10), (Tsukuba, Japan, May 11-14, 2005), P5-3, p. 21.
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Using In-vacuo Electron-spin-resonance and infrared spectroscopy technique in the analysis of surface reactions of Low-k films during/after plasma processes
AVS 51th International Symposium American Vacuum Society (AVS), (Anaheim, CA, U. S. A., November 14-17, 2004), PS1-MoM6, p. 62.
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Dangling bond creation and annihilation during plasma processes studied by in-situ ESR technique International conference
AVS 51st International Symposium American Vacuum Society (AVS), (Anaheim, CA, U. S. A., November 14-17, 2004), PS-ThA4, p. 140.