Presentations -
-
Quantum chemical investigations for excitation dissociations of C5F8 and C5HF7 etching gases International conference
T. Hayashi, Kenji Ishikawa, M. Sekine, M. Hori
The 34th International Symposium on Dry Process (DPS)
-
Highly selective etching of gap-fill dielectrics over SiC and SiN by the dc-bias superposed dual-frequency CCP International conference
T. Komuro, K. Takeda, Kenji Ishikawa, M. Sekine, Y. Ohya, H. Kondo, and M. Hori
The 34th International Symposium on Dry Process (DPS)
-
Photon-stimulated surface reaction and generation of damage to hydrogenated silicon nitride in fluorocarbon plasma International conference
M. Fukasawa, H. Matsugai, T. Honda, Y. Miyawaki, Y. Kondo, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, K. Nagahata, F. Uesawa, M. Hori, and T. Tatsumi
The 34th International Symposium on Dry Process (DPS)
-
An in-situ sequential H and N radical exposure process for recovery of plasma-damaged GaN International conference
Z. Liu, S. Chen, Y. Lu, R. Kometani, Kenji Ishikawa, H. Kano, K. Takeda, H. Kondo, M. Sekine, T. Egawa, H. Amano, and M. Hori
The 34th International Symposium on Dry Process (DPS)
-
High performances of microcrystalline Si thin film formation for a solar cell by measurement and control of hydrogen radicals in the SiH4/H2 plasma International conference
Y. Abe, A. Fukushima, Y. Lu, Y. Kim, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, and M. Hori
The 34th International Symposium on Dry Process (DPS)
-
Evaluation of gas-surface reaction dynamics during the plasmaless Si etching using NO/F2 gas mixture International conference
S. Tajima, T. Hayashi, Kenji Ishikawa, M. Sekine, and M. Hori
The 34th International Symposium on Dry Process (DPS)
-
(INVITED) Real time In Situ Electron Spin Resonance (ESR) Study of Free Radicals on Materials Created by Plasmas International conference
Kenji Ishikawa,
American Vacuum Society (AVS)
-
(Coburn Winters Finalist) Mechanism of Generating Ions and Radicals in Fluorocarbon Plasma Investigated by Reaction Model Analysis International conference
Yusuke Kondo, Kenji Ishikawa,
American Vacuum Society (AVS)
-
Subsequent Temporal Change of Gaseous H and N Radical Density in Plasma after Different Processes International conference
Toshiya Suzuki, Kenji Ishikawa,
American Vacuum Society (AVS)
-
Investigation of Plasma-Surface Interactions Between Hydrogen Radical and Chemically Amplified Photoresist International conference
Arkadiusz Malinowski, Makoto Sekine, Kenji Ishikawa,
American Vacuum Society (AVS)
-
Evaluation of Surface Chemical Bonding State and Surface Roughness of Chemical Dry Etched Si using NO and F2 Gas Mixture International conference
Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori
American Vacuum Society (AVS)
-
Control of Surface Properties on Plasma-Etched Gallium Nitride (GaN) International conference
Makoto Sekine, Ryosuke Kometani, Kenji Ishikawa,
American Vacuum Society (AVS)
-
Measurement of activated species generated by 60 Hz excited atmospheric pressure Ar plasma in atmospheric gas International conference
Keigo Takeda, Jerome Jolibois, Kenji Ishikawa, Hiromasa Tanaka, Hiroyuki Kano, Makoto Sekine, and Masaru Hori
65th Annual Gaseous Electronics Conference (GEC)
-
Reaction model for etching surface interacted with hydrofluorocarbon plasmas International conference
Kenji Ishikawa, Yusuke Kondo, Yudai Miyawaki, Toshio Hayashi, Makoto Sekine, Keigo Takeda, Hiroki Kondo, and Masaru Hori
65th Annual Gaseous Electronics Conference (GEC)
-
Study on synthesis processes and crystallinity changes of nanographene materials synthesized by alcohol liquid-plasma International conference
Hiroki Kondo, Tatusya Hagino, Keigo Takeda, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, and Masaru Hori
65th Annual Gaseous Electronics Conference (GEC)
-
Precise plasma process control based on combinatorial plasma etching International conference
Makoto Sekine, Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, and Masaru Hori
65th Annual Gaseous Electronics Conference (GEC)
-
Temperature measurement of substrate with a thin film using low-coherence interference International conference
Takayoshi Tsutsumi, Takehiro Hiraoka, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, and Masaru Hori
65th Annual Gaseous Electronics Conference (GEC)
-
(Invited) Healing Process of Plasma Damaged Gallium Nitride (GaN) International conference
Kenji Ishikawa, Shang Chen,
International conference on emerging advanced nanomaterials (ICEAN)
-
Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals International conference
Yu Arai, Yusuke Noto, Yousuke Goto, Seiji Takahashi, Akihiko Kono, Tatsuo Ishijima, Kenji Ishikawa, Masaru Hori, and Hideo Horibe
7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD-7)
-
Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer International conference
Akihiko Kono, Yu Arai, Yousuke Goto, Seiji Takahashi, Kenji Ishikawa, Masaru Hori, and Hideo Horibe
7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD-7)