講演・口頭発表等 - 石川 健治
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Cleaning of copper surface using vapor-phase organic acids 国際会議
2nd EU-Japan Joint Symposium on Plasma processing, (February 17-19, 2004), P-06, p. 322.
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Incident angular dependence of SiO2 and Si3N4 etching with mass-analyzed CFx+ ion beam irradiation 国際会議
2nd EU-Japan Joint Symposium on Plasma processing, (February 17-19, 2004), P-03, p. 295.
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Incident angular dependence of SiO2 and Si3N4 etching with mass-analyzed CFx+ ion beam irradiation 国際会議
4th International Symposium on Dry Process, (Hongoh, Tokyo, November 14-15, 2003), 7-3, pp. 271-276.
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Study of SiO2 plasma etching with off-normal mass-analyzed CFx+ ion beam irradiation 国際会議
AVS 50th International Symposium American Vacuum Society (AVS), (Baltimore, MD, U. S. A., November 2-7, 2003), PS1-WeA9, p. 171.
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Mechanisms of vapor cleaning of copper surface using organic acids 国際会議
204th Meeting of the Electrochemical Society (ECS), (Orlando, Florida, U. S. A., October 12-17, 2003), G1-613, pp. 259-263.
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Study of fluorocarbon plasma etching and film deposition with mass separated CFx+ ion beam irradiation 国際会議
16th International Symposium on Plasma Chemistry (ISPC16), (Taorumina, Italy, June 22-27, 2003), p. 307.
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Cleaning of copper surface using vapor-phase organic acids 国際会議
203rd Meeting of the Electrochemical Society (ECS), (Paris, France, April 27 – May 2, 2003), F2-425, pp. 320-323.
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Vapor treatment of copper surface using organic acids 国際会議
2003 Spring meeting of the Material Research Society (MRS), (San Francisco, April 21–25, 2003), E3-28, pp. 459-464.
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Study of selective etching of SiO2-to-Si3N4 and a-C:F film deposition with mass-analyzed CFx+ ion beam irradiation 国際会議
4th International Conference on Microelectronics and Interfaces (ICMI'03), (Santa Clara, CA, March 3-6, 2003), pp. .
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Measurements of Desorbed Products and Etching Yield by CFx+(x=1,2,3) Ion Irradiation 国際会議
AVS 49th International Symposium American Vacuum Society (AVS), (Denver Colorado, November 3-8, 2002), PS-FrM2, p.137.
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Using Real-time Infrared Spectroscopy and In-vacuo Electron-Spin-Resonance Technique in the Analysis of Surface Reactions during Etching of Organic Low-k Film by a Plasma of N2 and H2 国際会議
2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002), I-7, pp. 39-44.
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Decomposition Mechanism of c-C4F8 in Plasma Assisted Catalytic Technology (PACT) 国際会議
2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002). VI-22, pp. 243-248.
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Study of SiO2 plasma etching and fluorocarbon film deposition with mass separated CFx+ ion beam irradiation 国際会議
2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002), VII-3, pp. 269-274.
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Dangling Bond Observation during Plasma Etching Processes Using In-vacuo Electron-Spin-Resonance Technique 国際会議
16th European Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG) and 5th International Conference on Reactive Plasmas (ICRP), (Grenoble, France, July 15-18, 2002), P1-65, pp.169-170.
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Measurements of desorbed products and etching yield by CFx+ (x=1,2,3) ion irradiation on SiO2 国際会議
16th European Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG) and 5th International Conference on Reactive Plasmas (ICRP), (Grenoble, France, July 15-18, 2002), P1-80, pp. 199-200.
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Measurements of SiO2 Etch Yields under F+ and CFx+ Ion Irradiation 国際会議
3rd International Conference on Microelectronics and Interfaces (ICMI'02), (Santa Clara, CA, February 11-15, 2002), pp. .
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Dangling Bond Observation during Fluorocarbon Plasma Etching Processes Using In-vacuo Electron-Spin-Resonance Technique 国際会議
1st International Symposium on Dry Process, (Waseda, Tokyo, November 20-21, 2001), VII-6, pp. 301-306.
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In-vacuo Electron-Spin-Resonance Study on Fluorocarbon Films for SiO2 Plasma Etching 国際会議
AVS 48th International Symposium American Vacuum Society (AVS), (San Francisco, CA, October 28-November 2, 2001), PS1-MoA2, p.64.
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Early-stage modification of Silicon dioxide surface during fluorocarbon plasma etching 国際会議
25th Intern. Conf. on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a35, p. 89.
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Time-Resolved Planer Laser-Induced Fluorescence of Fluorocarbon Radicals in Oxide Etch Process Plasma 国際会議
25th International Conference on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a36, p. 91.