講演・口頭発表等 - 石川 健治
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Measurement of Si Wafer Temperature with Metal Thin Film during Plasma Process Using Low-Coherence Interferometer
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Deep-Level Defect Passivation by High Density Hydrogen Radical Exposure on Ion Irradiated Si
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Analysis of ArF Photoresist Modified by Fluorocarbon Ion Bombardment
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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SiO2 Cotact Hole Etch Mechanism Using Environment-Friendly New Gas, C5F7H
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Porous SiOCH Low-k Film Etch Process and its Surface Reactions Employing an Alternative Fluorocarbon Gas C5F10O
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Modeling of Radical Tranformation under `PAPE' Structure and Method of Estimation for Surface Loss Probabilities of Radicals
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Measurement of H Radical Density in H2/Ar Nonequilibrium Atmospheric Pressure Plasma
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Surface Loss Probabilities of H Atom on Various Silicon Thin Films
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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A Well-Established Compact Combinatorial Etching Process Employing Inductively Coupled H2/N2 Plasma
The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan
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Nanoscale engineering for plasma etching of future device fabrication 国際会議
The 10th International Workshop of Advanced Plasma Processing and Diagnostics
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A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site 国際会議
2008 IEEE International Electron Devices Meeting (IEDM), (San Francisco, U.S.A., December 15-17, 2008), 18-2, pp. 443-447.
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Enhancing Yield and Reliability by Applying Dry Organic Acid Vapor Cleaning to Copper Contact Via-Bottom for 32-nm Nodes and Beyond 国際会議
The 11th International Interconnect Technology Conference (IITC) 2008, (San Francisco, June 10-12, 2008), pp. 93-96.
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Reaction mechanism of low-temperature damageless cleaning of Cu2O by HCOOH 国際会議
Advanced Metallization Conference (AMC) 2006: 16th Asian Session, (Tokyo, September 25-27, 2006), No. 3-6, pp. 111-116.
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Large Reduction in Standby Power Consumption Achieved with Stress-controlled SRAM Cell Layout 国際会議
Ext. Abst. the 2006 International conference on Solid State Devices and Materials (SSDM), (Yokohama, Japan, September 12-15, 2006), H-2-2, pp. 172-173.
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Reduction of Copper Surface with Formic Acid for 32-nm-Node ULSI Metallization: Surface Kinetics Study 国際会議
The 209th Electrochemical Society Spring Meeting (ECS) (Colorado, U.S.A., May 7-12, 2006), vol. 601, p. 828.
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Plasma emission irradiation effects on etching surface reactions: Analysis using in-vacuo electron-spin-resonance technique 国際会議
International conference on reactive plasmas and Symposium on Plasma processing (ICRP 6/SPP 23), (Sendai, Japan, January 24-27, 2006), P-2A-38, p. 467.
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Structural damage of diamond by oxygen ion beam exposure 国際会議
International conference on reactive plasmas and Symposium on Plasma processing (ICRP 6/SPP 23), (Sendai, Japan, January 24-27, 2006), G-3A-5, p. 91.
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Vacuum-ultraviolet photon irradiation effects in fluorocarbon plasmas on SiO2 etching surface reactions using In vacuo electron-spin-resonance
AVS 52nd International Symposium American Vacuum Society (AVS), (Boston, MA, U. S. A., October 31-November 4, 2005), PS-TuA6, p.97.
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Low temperature dry cleaning technology using formic acid in Cu/Low-k multilecel interconnects for 45 nm node and beyond 国際会議
Advanced Metallization Conference (AMC) 2005, (Colorado, U. S. A., September 27-29, 2005), pp. 569-574.
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Efficient reduction of standby leakage current in LSIs for use in mobile devices 国際会議
Ext. Abst. the 2005 International conference on Solid State Devices and Materials (SSDM), (Kobe, September 13-15, 2005), pp. 878-879.