講演・口頭発表等 - 坂下 満男
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Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical 国際会議
K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
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Defects introduced in germanium substrate by reactive ion etching 国際会議
Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima
5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
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Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical 国際会議
K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials
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High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization 国際会議
W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima
International Conference on Solid State Devices and Materials
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Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer 国際会議
H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima
IUMRS International Conference on Electronic Materials
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Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate 国際会議
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
IUMRS International Conference on Electronic Materials
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Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications 国際会議
O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima
University of Vigo and JSPS Core-to-Core Program Joint Seminar
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Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures 国際会議
Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
AWAD2012
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Potential of GeSn Alloys for Application to Si Nanoelectronics 国際会議
S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka
2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
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Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures 国際会議
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
CNSE and JSPS Core-to-Core Program Joint Seminar
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Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure 国際会議
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
ISTDM2012
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Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure 国際会議
K.Kato, M.Sakashita, W.Takeuchi, O. Nakatsuka, and S.Zaima
IC-PLANTS 2012
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The effect of light exposure on the electrical properties of GeO2/Ge gate stack 国際会議
Kusumandari, W.Takeuchi, M.Sakashita, O.Nakatsuka, and S.Zaima
ISPlasma2012
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Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique 国際会議
K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
ICTF-15
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Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-Oxide Film 国際会議
W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima
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Improvement of Al2O3 Interfacial Properties by O2 Annealing 国際会議
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
ICSI-7
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Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure 国際会議
K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
IC-PLANTS2011
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Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation 国際会議
Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima
ISPLasma2011
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Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma 国際会議
Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima
IWDTF
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Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique 国際会議
K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima
IWDTF