講演・口頭発表等 - 坂下 満男
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Epitaxial Germanide/Germanium Contact: Its Impact on Schottky Barrier Height 招待有り 国際会議
O. Nakatsuka, S. Shibayama, M. Sakashita, and M. Kurosawa
13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月23日
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Research and Development of GeSn-related Group-IV Semiconductor Heterostructures for Optoelectronic Applications 招待有り 国際会議
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
Symposium on Light Emission and Photonics of Group IV Semiconductor Nanostructures (LPGN) 2022年12月14日
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Synthesis of multilayer two-dimensional group-IV flakes and nanosheets 国際会議
M. Kurosawa, M. Itoh, Y. Ito, K. Okada, A. Ohta, M. Araidai, Kosuke O. Hara, Y. Ando, S. Yamada, S. Shibayama, M. Sakashita, and O. Nakatsuka
the 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33) 2022年11月15日
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Impact of Strain Structure in Epitaxial HfGe2/n-Ge(001) Contact on Morphology and Schottky Barrier Height 国際会議
O. Nakatsuka, Kentaro Kasahara, S. Shibayama, M. Sakashita, and M. Kurosawa
Advanced Metallization Conference 2022 31st Asian Session (ADMETA Plus 2022) 2022年10月
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Study on doping by ion implantation to Si1-xSnx epitaxial layers 国際会議
T. Oiwa, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
2022 International Conference on Solid State Devices and Materials (SSDM 2022) 2022年9月
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Molecular beam epitaxy of Si1-xSnx layers with 10%-Sn content on Si1-yGey buffers 国際会議
K. Fujimoto, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
2022 International Conference on Solid State Devices and Materials (SSDM 2022) 2022年9月
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Formation of ferroelectric ZrO2 film in ultra-thin region by sputtering method 国際会議
S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka
2022 International Conference on Solid State Devices and Materials (SSDM 2022) 2022年9月
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Substrate engineering for strain-controlled high-Sn-content Ge1-xSnx epitaxy 国際会議
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022) 2022年7月
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Enhancement of the Field-Effect Mobility of 4H-SiC Buried Channel n-MOSFETs by Using Al2O3 as a Gate Insulator 国際会議
T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2021 IWDTF)
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Optoelectronic properties of pseudo-direct transition n+-Ge1-xSnx and heterostructures composed of n+-Ge1-xSnx and n-SiyGe1-y 国際会議
S. Zhang, M. Sakashita, S. Shibayama, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)
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Schottky barrier height lowering for metal/n-type 4H-SiC contacts using low work function metals 国際会議
T. Doi, S. Shibayama, M. Sakashita, M. Shimizu, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)
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Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface 国際会議
E. Kagoshima, W. Takeuchi, K. Kutsuki, M. Sakashita, H. Fujiwara, and O. Nakatsuka
2021 International Conference on Solid State Devices and Materials (SSDM 2021)
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Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property 招待有り 国際会議
K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka
20th International Workshop on Junction Technology 2021 (IWJT2021)
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Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application 国際会議
O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima
ECS Meeting
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Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り 国際会議
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
ECS Meeting
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Understanding wet annealing effect on phase transition and ferroelectric phase formation for Hf1-xZrxO2 film 国際会議
S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka
SSDM2020 2020年9月28日
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In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity 国際会議
M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka
ISCSI-VIII
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Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices 招待有り 国際会議
O. Nakatsuka, M. Kurosawa, S. Shibayama, M. Sakashita and S. Zaima
ISCSI-VIII
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Ferroelectric Phase Evolution of Undoped ZrO2 Thin Film by Wet O2 Annealing Process 国際会議
S. Shibayama, J. Nagano, M. Sakashita, O. Nakatsuka
IWDTF
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Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface 国際会議
T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu and O. Nakatsuka
ICMaSS