講演・口頭発表等 - 坂下 満男
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Sn-related Group-IV semiconductor materials for electronic and optoelectronic applications 国際会議
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
3rd international Conference on Nanotek and Expo (Nanotek-2013)
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Development of Ge1-xSn and Ge1-x-ySixSny thin film materials for future electronic applications 国際会議
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
3rd international Conference on Nanotek and Expo (Nanotek-2013)
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Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density 国際会議
S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima
IWDTF2013
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Robustness of Sn Precipitation During Thermal Process of Ge1-xSnx 国際会議
K. Kato, T. Asano, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima
IWDTF2013
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Interface Properties of Al2O3/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD 国際会議
T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, S. Zaima
IWDTF2013
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Heteroepitaxial Growth of Sn-Related Group-IV Materials On Si Platform for Microelectronic and Optoelectronic Applications:Challenges and Opportunities 国際会議
O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita and S. Zaima
The 224th Electrochemical Society Meeting
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Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface 国際会議
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima
The 224th Electrochemical Society Meeting
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Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate 国際会議
N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration -
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Stabilization for Higher-k Films with Meta-Stable Crystalline Structure 国際会議
K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration -
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Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode 国際会議
A. Suzuki, S. Asaba, J. Yokoi, O. Nakatsuka, M. Kurosawa, K. Kato, M. Sakashita, N. Taoka and S. Zaima
2013 International Conference on Solid State Devices and Materials (SSDM 2013)
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Engineering of Energy Band Structure with Epitaxial Ge1-x-ySixSny/n-Ge Hetero Junctions for Solar Cell Applications 国際会議
S. Asaba, T. Yamaha, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima
2013 International Conference on Solid State Devices and Materials (SSDM 2013)
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Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate 国際会議
T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima
2013 International Conference on Solid State Devices and Materials (SSDM 2013)
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Function of Additional Element Incorporation for Tetragonal ZrO2 Formation 国際会議
K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
NIMS Conference 2013 -Structure Control of Atomic/Molecular Thin Films and Their Applications-
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Formation of Tetragonal ZrO2 Thin Film by ALD Method 国際会議
K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Control of Interfacial Reactions in Al2O3/Ge Structures 国際会議
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Lateral Growth Enhancement of Poly-Ge1-xSnx on SiO2 using a Eutectic Reaction 国際会議
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion 国際会議
K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
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Impacts of AlGeO Formation by Post Thermal Oxidation of Al2O3/Ge Structure on Interface Properties 国際会議
S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits 国際会議
N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
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Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn) 国際会議
M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar