研究者詳細 - 坂下　満男

講演・口頭発表等 - 坂下　満男

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A new challenge in group-IV materials: energy harvesting application & 2D crystal synthesizing 招待有り国際会議

Masashi Kurosawa, Akio Ohta, Masaaki Araidai, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月14日

Thermoelectric properties of Sb-doped Ge1-x-ySixSny ternary alloy layers lattice matched to GaAs substrates 国際会議

Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa

14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月14日

Electrical activation of implanted phosphorus in GeSn epitaxial layers grown on Si(111) substrate 国際会議

Yoshiki Kato, Masahiro Fukuda, Shigehisa Shibayama, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月15日

Crystal Growth Technology of GeSn-related Group-IV Heteroepitaxial Layers 招待有り国際会議

Osamu Nakatsuka, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita

3rd Nucleation and Growth Research Conference (NGRC) 2023年11月10日

Sputtering Heteroepitaxy of Ge0.75Sn0.25 Layer on InP(001) Substrate 国際会議

Taichi Kabeya, Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY 2023年10月25日

Epitaxial Growth Technique for Si1-xSnx Binary Alloy Thin Films 招待有り国際会議

Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

244th ECS Meeting 2023年10月10日

Seed-layer driven solid phase epitaxy of amorphous Ge1-xSnx layers on Si(001) substrates toward in-plane strain control 国際会議

Tatsuma Hiraide, Masashi Kurosawa, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka

2023 International Conference on Solid State Devices and Materials 2023年9月7日

Experimental observation of negative differential resistance in GeSn/GeSiSn double barrier structure toward resonant tunneling diode applications 国際会議

Shuto Ishimoto, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama

2023 International Conference on Solid State Devices and Materials 2023年9月7日

Optoelectronic properties of Ge1−xSnx/high-Si-content SiyGe1−y− zSnz double quantum wells formed by low-temperature MBE growth and post deposition annealing 国際会議

Shigehisa Shibayama, Shiyu Zhang, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka

2023 International Conference on Solid State Devices and Materials 2023年9月7日

Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge1-x-ySixSny layers 国際会議

Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa

2023 International Conference on Solid State Devices and Materials 2023年9月7日

Giant thermoelectric power of n-type Si1-xSnx layers grown on FZ-Si(001) substrates 国際会議

Tatsuki Oiwa, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa

2023 International Conference on Solid State Devices and Materials 2023年9月7日

Heteroepitaxial Growth of High Substitutional Sn-content Ge1−xSnx Layer Lattice-matched on InP Substrate 国際会議

Osamu Nakatsuka, Komei Takagi, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita

The International Conference on Silicon Epitaxy and Heterostructures and the International SiGe Technology and Device Meetings 2023年5月22日

Low-temperature Thermoelectric Properties of GeSn Alloys Films

M. Kurosawa, T. Katase, Y. Imai, M. Nakata, M. Kimura, T. Kamiya, S. Shibayama, M. Sakashita, and O. Nakatsuka

The International Conference on Silicon Epitaxy and Heterostructures and the International SiGe Technology and Device Meetings 2023年5月22日

Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications 招待有り国際会議

Osamu Nakatsuka, Masashi Kurosawa, Shigehisa Shibayama, and Mitsuo Sakashita

2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors 2023年5月15日

Potential of Silicon-Germanium-Tin Thin Films for Future Thermoelectric Device Applications 招待有り国際会議

M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka

15th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 16th International Conference on Plasma-Nano Technology and Science (ISPlasma 2023 / IC-PLANTS 2023) 2023年3月8日

Challenge and new opportunity of Ge1-x-ySixSny/Ge1-xSnx heterostructures for optoelectronic and electronic device applications 招待有り国際会議

S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月24日

Arising ferroelectric properties in ZrO2 thin film down to 4 nm 国際会議

S. Ikeguchi, J. Nagano, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Shibayama

13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月23日

Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers 国際会議

T. Mori, S. Shibayama, K. Nishizawa, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月23日

Crystalline and electrical properties of Ge1-x-ySixSny epitaxial layers - Effect of Si incorporation and H2 irradiation 国際会議

K. Nishizawa, S. Shibayama, T. Mori, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月24日

Heteroepitaxy of Ge1-xSnx with a high Sn content over 25% on InP(001) toward group-IV infrared detector 国際会議

K. Takagi, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月23日

Epitaxial Germanide/Germanium Contact: Its Impact on Schottky Barrier Height 招待有り国際会議

O. Nakatsuka, S. Shibayama, M. Sakashita, and M. Kurosawa

13th International WorkShop on New Group IV Semiconductor Nanoelectronics 2023年1月23日

Research and Development of GeSn-related Group-IV Semiconductor Heterostructures for Optoelectronic Applications 招待有り国際会議

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

Symposium on Light Emission and Photonics of Group IV Semiconductor Nanostructures (LPGN) 2022年12月14日

Synthesis of multilayer two-dimensional group-IV flakes and nanosheets 国際会議

M. Kurosawa, M. Itoh, Y. Ito, K. Okada, A. Ohta, M. Araidai, Kosuke O. Hara, Y. Ando, S. Yamada, S. Shibayama, M. Sakashita, and O. Nakatsuka

the 33rd International Photovoltaic Science and Engineering Conference (PVSEC-33) 2022年11月15日

Impact of Strain Structure in Epitaxial HfGe2/n-Ge(001) Contact on Morphology and Schottky Barrier Height 国際会議

O. Nakatsuka, Kentaro Kasahara, S. Shibayama, M. Sakashita, and M. Kurosawa

Advanced Metallization Conference 2022 31st Asian Session (ADMETA Plus 2022) 2022年10月

Study on doping by ion implantation to Si1-xSnx epitaxial layers 国際会議

T. Oiwa, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

2022 International Conference on Solid State Devices and Materials (SSDM 2022) 2022年9月

Molecular beam epitaxy of Si1-xSnx layers with 10%-Sn content on Si1-yGey buffers 国際会議

K. Fujimoto, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka

2022 International Conference on Solid State Devices and Materials (SSDM 2022) 2022年9月

Formation of ferroelectric ZrO2 film in ultra-thin region by sputtering method 国際会議

S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

2022 International Conference on Solid State Devices and Materials (SSDM 2022) 2022年9月

Substrate engineering for strain-controlled high-Sn-content Ge1-xSnx epitaxy 国際会議

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022) 2022年7月

Enhancement of the Field-Effect Mobility of 4H-SiC Buried Channel n-MOSFETs by Using Al2O3 as a Gate Insulator 国際会議

T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2021 IWDTF)

Optoelectronic properties of pseudo-direct transition n+-Ge1-xSnx and heterostructures composed of n+-Ge1-xSnx and n-SiyGe1-y 国際会議

S. Zhang, M. Sakashita, S. Shibayama, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)

Schottky barrier height lowering for metal/n-type 4H-SiC contacts using low work function metals 国際会議

T. Doi, S. Shibayama, M. Sakashita, M. Shimizu, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)

Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface 国際会議

E. Kagoshima, W. Takeuchi, K. Kutsuki, M. Sakashita, H. Fujiwara, and O. Nakatsuka

2021 International Conference on Solid State Devices and Materials (SSDM 2021)

Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property 招待有り国際会議

K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka

20th International Workshop on Junction Technology 2021 (IWJT2021)

Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application 国際会議

O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima

ECS Meeting

Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り国際会議

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Meeting

Understanding wet annealing effect on phase transition and ferroelectric phase formation for Hf1-xZrxO2 film 国際会議

S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

SSDM2020 2020年9月28日

In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity 国際会議

M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka

ISCSI-VIII

Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices 招待有り国際会議

O. Nakatsuka, M. Kurosawa, S. Shibayama, M. Sakashita and S. Zaima

ISCSI-VIII

Ferroelectric Phase Evolution of Undoped ZrO2 Thin Film by Wet O2 Annealing Process 国際会議

S. Shibayama, J. Nagano, M. Sakashita, O. Nakatsuka

IWDTF

Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface 国際会議

T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu and O. Nakatsuka

ICMaSS

Optoelectronic Property of GeSn and GeSiSn Heterostructure 国際会議

M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka

ICMaSS

Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET 国際会議

W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, and O. Nakatsuka

SSDM

In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks 国際会議

T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

SSDM

GeSn and GeSiSn Heterostructures for Optoelectronic Applications 招待有り国際会議

O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima

2019 IEEE Photonics Society Summer Topicals Meeting Series

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 国際会議

K. Senga, S. Shibayama, M. Sakashita, S. Zaima, and O. Nakatsuka

19th International Workshop on Junction Technology 2019 (IWJT2019)

Development and challenges of group-IV alloy semiconductors for nanoelectronic applications 招待有り国際会議

S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama

The Eleventh International Conference on High-Performance Ceramics (CICC-11)

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny QuantumWell Structures 国際会議

G. R. Suwito, M. Fukuda, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

Compoud Semiconductor Week 2019 (CSW 2019)

GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications 招待有り国際会議

O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics

Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure 国際会議

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

ACSIN-ICSPM

Impact of Crystalline Property of SixGe1-x-ySny Ternary Alloy Interlayer on Schottky Barrier Height Engineering of Metal/Ge Contact 国際会議

O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima

ADMETA Plus

Composition and Strain Engineering of New Group-IV Thermoelectric Materials 招待有り国際会議

M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

ECS Meeting

Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2018 International Conference on Solid State Devices and Materials (SSDM 2018)

Impact of Oxygen Radical Treatment on Improvement of Al2O3/SiC Interface 国際会議

T. Doi, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

2018 International Conference on Solid State Devices and Materials (SSDM 2018)

GeSn-based thin film thermoelectric generators 招待有り国際会議

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications

Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films 招待有り国際会議

O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima

IEEE Photonics Society Summer Topical Meeting Series 2018

Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

European Materials Research Society (2018 E-MRS Spring Meeting)

Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer 国際会議

M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

1st Joint Conference ICSI / ISTDM 2018

Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator 国際会議

K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

The 2nd Electron Devices Technology and Manufacturing (EDTM 2018)

Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

11th International WorkShop on New Group IV Semiconductor Nanoelectronics

Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators 招待有り国際会議

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

The 2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017)

Characterization of Defects in Ge1-xSnx Gate Stack Structure 国際会議

Y. Kaneda, S. Ike, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF)

Development of GeSn-Related Group-IV Semiconductor Thin Films for Future Si Nanoelectronic Applications 招待有り国際会議

S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita

the 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017)

GeSn and related group-IV alloy thin films for future Si nanoelectronics 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima

Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher

Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure 国際会議

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)

Control of Electrical Property at Metal/Ge Interface with Group-IV Alloy Interlayer 国際会議

A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)

Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

2017 International Conference on Solid State Devices and Materials (SSDM 2017)

Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, S. Zaima

Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017)

Development of GeSn and related semiconductor thin films for next generation optoelectronic applications 招待有り国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2017 Global Conference on Polymer and Composite Materials (PCM 2017)

Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer 国際会議

A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)

Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure 国際会議

M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)

Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)

Heavily p-type Doping to Si1-xSnx Layers Grown on SOI Substrates 国際会議

Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 11th International Conference on Plasma-Nano Technology and Science (ISPlasma 2018 / IC-PLANTS 2018)

Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition 国際会議

W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and , S. Zaima

9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017)

Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties 招待有り国際会議

W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack 国際会議

Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates 国際会議

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers 国際会議

A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"

Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"

Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy 国際会議

W. Takeuchi, Y. Inuzuka, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium)

Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact 国際会議

A. Suzuki, S. Toda, O. Nakatsuka, M. Sakashita, and S. Zaima

2016 International Conference on Solid State Devices and Materials (SSDM 2016)

Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor 国際会議

W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima

2016 International Conference on Solid State Devices and Materials (SSDM 2016)

Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

2016 International Conference on Solid State Devices and Materials (SSDM 2016)

Challenges in Engineering Materials Properties for GeSn Nanoelectronics 招待有り国際会議

S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita

The 2016 European Materials Research Society (E-MRS) Fall Meeting

Growth and applications of GeSn-related group-IV semiconductor materials 国際会議

S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita

IEEE 2016 Summer Topicals Meeting Series

Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate 国際会議

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

ISCSI-VII/ISTDM 2016

Control of the Fermi level pinning position at metal/Ge interface by using Ge1-xSnx interlayer 国際会議

A. Suzuki, O. Nakatsuka, M. Sakashita, S. Zaima

ISCSI-VII/ISTDM 2016

Development of GeSn thin film technology for electronic and optoelectronic applications 国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

2016 EMN Summer Meeting & Photodetectors Meeting

Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property 国際会議

S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, S. Zaima

ISPlasma 2016 / IC-PLANTS 2016

Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties 国際会議

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima

ISPlasma 2016 / IC-PLANTS 2016

Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer 国際会議

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers 国際会議

J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka and S. Zaima

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties 国際会議

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima

9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Schottky Barrier Engineering by Epitaxial Metal Germanide/Germanium Contacts 国際会議

O. Nakatsuka, Y. Deng, A. Suzuki, M. Sakashita, and S. Zaima

ISETS '15

Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions 国際会議

W. Takeuchi, Y. Inuzuka, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

ISETS '15

Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer 国際会議

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

ISETS '15

Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

ISETS '15

Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications 国際会議

O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima

IWAN 2015

Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack 国際会議

M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

2015 IWDTF

Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy 国際会議

Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima

2015 IWDTF

Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits 国際会議

S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita

The 228th Electrochemical Society Meeting

Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform 国際会議

S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi and M. Sakashita

SSDM 2015

Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface 国際会議

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima

SSDM 2015

Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge 国際会議

W. Takeuchi, K. Yamamoto, M. Sakashita, T. Kanemura, O. Nakatsuka and S. Zaima

SSDM 2015

Characterization of Deep-level Defects in Epitaxial Ge1-xSnx/Ge structure 国際会議

W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima

JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration

Reduction of Schottky barrier height with Sn/Ge contact 国際会議

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, S. Zaima

JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration

Development of polycrystalline Sn-related group-IV semiconductor thin films - Aiming for 3D-IC 国際会議

M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)

Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation 国際会議

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

15th International Workshop on Junction Technology 2015 (IWJT 2015)

Formation of type-I energy band alignment of Ge1-x-ySixSny/Ge hetero structure 国際会議

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices 国際会議

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers 国際会議

T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

T. Yamaha, K. Kato, S. Shibayama, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima

Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer 国際会議

W. Takeuchi, T. Asano, M. Sakashita, O. Nakatsuka, S. Zaima

7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference

Solid phase epitaxy of Ge1-x-ySnxCy ternary alloy layers 国際会議

H. Oda, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 8th International Conference

Crystalline and Optical Properties of Ge1-x-ySixSny Ternary Alloy Layers for Solar Cell Application 国際会議

T. Yamaha, S. Asaba, T. Terashima, T. Asano, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Behaviors of tin related defects in Sb doped n-type germanium 国際会議

W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima

8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"

Development of metal/Ge contacts for engineering Schottky barriers 国際会議

O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"

Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height 国際会議

O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima

Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd

Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates 国際会議

A. Suzuki, D. Yunsheng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Advanced Metallization Conference 2014: 24th Asian Session (ADMETA Plus 2014) in conjunction with the 3rd

Challenges and Developments in GeSn Process Technology for Si Nanoelectronics 国際会議

S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita

226th Meeting of The Electrochemical Society (ECS) and SMEQ (Sociedad Mexicana de Electroquímica) Joint

Impact of Hydrogen Surfactant Epitaxy and Annealing on Crystallinity of Epitaxial Ge1-xSnx Layers 国際会議

2014 International Conference on Solid State Devices and Materials (SSDM 2014)

Mobility behavior of Si1-x-yGexSny polycrystals grown on insulators 国際会議

International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)

Transformation of Defects Structure in Germanium by Sn Ion Implantation 国際会議

International Union of Materials Research Societies - International Conference in Asia 2014 (IUMRS-ICA 2014)

Crystalline Growth and Characterization of Group-IV Ternary Alloy Thin Films for Solar Cell 国際会議

T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

T. Yamaha, K. Terasawa, T. Terashima, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Formation and Electrical Properties of Metal/Ge1-xSnx Contacts 国際会議

O. Nakatsuka, T. Nishimura, A. Suzuki, K. Kato, Y. Deng, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima

14th International Workshop on Junction Technology (IWJT 2014)

Sn-related Group-IV semiconductor materials for electronic and optoelectronic applications 国際会議

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

3rd international Conference on Nanotek and Expo (Nanotek-2013)

Development of Ge1-xSn and Ge1-x-ySixSny thin film materials for future electronic applications 国際会議

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima

3rd international Conference on Nanotek and Expo (Nanotek-2013)

Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density 国際会議

S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima

IWDTF2013

Robustness of Sn Precipitation During Thermal Process of Ge1-xSnx 国際会議

K. Kato, T. Asano, N. Taoka, M. Sakashita, O. Nakatsuka, S. Zaima

IWDTF2013

Interface Properties of Al2O3/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD 国際会議

T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, S. Zaima

IWDTF2013

Heteroepitaxial Growth of Sn-Related Group-IV Materials On Si Platform for Microelectronic and Optoelectronic Applications:Challenges and Opportunities 国際会議

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita and S. Zaima

The 224th Electrochemical Society Meeting

Reduction of Interface States Density due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface 国際会議

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima

The 224th Electrochemical Society Meeting

Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate 国際会議

N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration -

Stabilization for Higher-k Films with Meta-Stable Crystalline Structure 国際会議

K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

JSPS Core-to-Core Program Workshop - Atomically Controlled Processing for Ultralarge Scale Integration -

Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode 国際会議

A. Suzuki, S. Asaba, J. Yokoi, O. Nakatsuka, M. Kurosawa, K. Kato, M. Sakashita, N. Taoka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013)

Engineering of Energy Band Structure with Epitaxial Ge1-x-ySixSny/n-Ge Hetero Junctions for Solar Cell Applications 国際会議

S. Asaba, T. Yamaha, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013)

Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate 国際会議

T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

2013 International Conference on Solid State Devices and Materials (SSDM 2013)

Function of Additional Element Incorporation for Tetragonal ZrO2 Formation 国際会議

K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

NIMS Conference 2013 -Structure Control of Atomic/Molecular Thin Films and Their Applications-

Formation of Tetragonal ZrO2 Thin Film by ALD Method 国際会議

K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Control of Interfacial Reactions in Al2O3/Ge Structures 国際会議

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Lateral Growth Enhancement of Poly-Ge1-xSnx on SiO2 using a Eutectic Reaction 国際会議

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion 国際会議

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)

Impacts of AlGeO Formation by Post Thermal Oxidation of Al2O3/Ge Structure on Interface Properties 国際会議

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar

Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits 国際会議

N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar

Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn) 国際会議

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar

Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical 国際会議

K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)

Defects introduced in germanium substrate by reactive ion etching 国際会議

Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima

5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)

Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical 国際会議

K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

International Conference on Solid State Devices and Materials

High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization 国際会議

W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima

International Conference on Solid State Devices and Materials

Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer 国際会議

H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima

IUMRS International Conference on Electronic Materials

Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate 国際会議

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

IUMRS International Conference on Electronic Materials

Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications 国際会議

O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima

University of Vigo and JSPS Core-to-Core Program Joint Seminar

Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures 国際会議

Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

AWAD2012

Potential of GeSn Alloys for Application to Si Nanoelectronics 国際会議

S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka

2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices

Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures 国際会議

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima

CNSE and JSPS Core-to-Core Program Joint Seminar

Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure 国際会議

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

ISTDM2012

Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure 国際会議

K.Kato, M.Sakashita, W.Takeuchi, O. Nakatsuka, and S.Zaima

IC-PLANTS 2012

The effect of light exposure on the electrical properties of GeO2/Ge gate stack 国際会議

Kusumandari, W.Takeuchi, M.Sakashita, O.Nakatsuka, and S.Zaima

ISPlasma2012

Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique 国際会議

K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

ICTF-15

Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-Oxide Film 国際会議

W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima

Improvement of Al2O3 Interfacial Properties by O2 Annealing 国際会議

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

ICSI-7

Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure 国際会議

K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

IC-PLANTS2011

Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation 国際会議

Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima

ISPLasma2011

Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma 国際会議

Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima

IWDTF

Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique 国際会議

K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima

IWDTF

Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors 国際会議

K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima

The 1st Korea-Japan Symposium on Surface Technology

Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy 国際会議

2010 International Conference on Solid State Devices and Materials (SSDM 2010)

Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition 国際会議

2010 International Conference on Solid State Devices and Materials (SSDM 2010)

Nitrogen content dependence of crystalline and electrical properties of ternary transition metal gate electrodes 国際会議

International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)

Crystalline and electrical properties of PrAlO gate insulator films formed by atomic layer deposition 国際会議

International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)

Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen 国際会議

5th International SiGe Technology Device Meeting 2010 (ISTDM2010)

Formation of Pr Oxide Films by Atomic Layer Deposition using Pr(EtCp)3 Precursor 国際会議

2009 International Conference on Solid State Devices and Materials (SSDM)

LaAlO/Ge構造へのALD-Al2O3界面制御層挿入の効果

坂下満男, 加藤亮祐, 京極真也, 近藤博基, 財満鎭明

応用物理学会　シリコンテクノロジー分科会研究集会

Pr-Oxide-Based Dielectric Films on Ge Substrates 国際会議

2007 International Conference on Solid State Devices and Materials

開催年月日： 2007年9月

記述言語：英語会議種別：ポスター発表

国名：日本国

We investigated film structures and electrical properties of Pr oxide films prepared in various ambient on Ge (001) wafers by pulsed laser deposition. Angle-resolved X-ray photoelectron spectroscopy revealed that GeOx incorporation into the Pr oxide film is obvious, leading to reduction of permittivity, when depositing in Ar ambient, whereas it is suppressed in O2 and the vacuum deposition.

Ge基板上に堆積したPr酸化物ゲート絶縁膜の角度分解XPSによる評価

坂下満男、鬼頭伸幸、酒井　朗、小川正毅、財満鎭明

第68回応用物理学会学術講演会

Ge基板上へのPr酸化膜の作製と評価

坂下満男、鬼頭伸幸、酒井　朗、小川正毅、財満鎭明

応用物理学会　シリコンテクノロジー分科会研究集会

Prシリケイト膜の結晶構造と電気的特性の熱処理依存性

坂下満男、山矢　隼、酒井　朗、小川正毅、財満鎭明

第52回応用物理学関係連合講演会

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