講演・口頭発表等 - 坂下 満男
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Formation of ultra-thin GeSn layer by segregation method through Al/GeSn(111) structure 国際会議
Taiga Matsumoto, Akio Ohta, Ryo Yokogawa, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama
JSAP Tokai New Frontier Research International Workshop 2025年3月2日
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Impact of deposition rate on spatial homogeneity of high-Sn-content Ge1-xSnx (x~0.25) epitaxial layers in sputtering method 国際会議
Shigehisa Shibayama, Taichi Kabeya, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
JSAP Tokai New Frontier Research International Workshop 2025年3月2日
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Phosphorus ion implantation and activation in GeSn epitaxial layers grown on Si(111)substrate 国際会議
Yoshiki Kato, Masahiro Fukuda, Shigehisa Shibayama, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
JSAP Tokai New Frontier Research International Workshop 2025年3月2日
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Low-temperature thermoelectric properties of n-type Ge1-x-ySixSny thin films 国際会議
Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa
JSAP Tokai New Frontier Research International Workshop 2025年3月2日
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Explorer and Development of Very-High-Sn-Content Ge1−xSnx Epitaxy for Electronic and Optoelectronic Applications 招待有り 国際会議
Osamu Nakatsuka, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2024年10月21日
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Segregation induced GeSn nanosheet formation through Al and Ge1−xSnx epitaxial layers 国際会議
Taiga Matsumoto, Akio Ohta, Ryo Yokogawa, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2024年10月22日
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New interests of Ge1−x−ySixSny/Ge1−xSnx heterostructures for electronic device applications 招待有り 国際会議
Shigehisa Shibayama, Shuto Ishimoto, Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2024年10月22日
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Giant thermoelectric power observed in group-IV-based films with high carrier concentrations at low temperatures 招待有り 国際会議
Masashi Kurosawa, Takayoshi Katase, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2024年10月21日
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Formation of methylated germanane multilayers from CaGe2 epitaxial layers on Ge(111) 国際会議
Atsuki Nakayama, Kazuho Matsumoto, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2024年10月22日
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Comprehensive study on epitaxial growth of GeSn(111) layers with high Sn content on Si(111) featuring Ge buffer layer 国際会議
S. Shibayama, S. Mori, Y. Kato, M. Sakashita, M. Kurosawa, and O. Nakatsuka
ECS PRiME2024 2024年10月10日
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Recent Progress on Heteroepitaxy of Si-Sn Alloy Thin Films 招待有り 国際会議
M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
ECS PRiME2024 2024年10月10日
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Influence of hydrogen desorption temperature on interlayer distance of multilayered GeH nanosheets under ultrahigh vacuum ambient 国際会議
Kazuho Matsumoto, Masaaki Araidai, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Tomonori Nishimura, Kosuke Nagashio, and Masashi Kurosawa
2024 International Conference on Solid State Devices and Materials (SSDM2024) 2024年9月4日 JSAP
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Impacts of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC Trench MOSFET 国際会議
Momoko Inayoshi, Naotoshi Hikosaka, Ryuki Kamiya, Eiji Kagoshima, Shigehisa Shibayama, Mitsuo Sakashita, Hidemoto Tomita, Tsuyoshi Nishiwaki, Hirokazu Fujiwara, Osamu Nakatsuka, Noriyuki Taoka, Wakana Takeuchi
2024 International Conference on Solid State Devices and Materials (SSDM2024) 2024年9月3日 JSAP
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Efficient Reverse Current Reduction of GeSn-Based pn Diodes by Surface Passivation of ALD-GeO2 and Al2O3 Stacked Structure 国際会議
Yoshiki Kato, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, and Shigehisa Shibayama
2024 International Conference on Solid State Devices and Materials (SSDM2024) 2024年9月2日 JSAP
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Comprehensive Study on Crystal Growth of CaSi2 Layers on Si(111) Using Solid Phase Epitaxy 国際会議
Kagiri Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, and Masashi Kurosawa
2024 International Conference on Solid State Devices and Materials (SSDM2024) 2024年9月4日 JSAP
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A new challenge in group-IV materials: energy harvesting application & 2D crystal synthesizing 招待有り 国際会議
Masashi Kurosawa, Akio Ohta, Masaaki Araidai, Shigehisa Shibayama, Mitsuo Sakashita, and Osamu Nakatsuka
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月14日
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Thermoelectric properties of Sb-doped Ge1-x-ySixSny ternary alloy layers lattice matched to GaAs substrates 国際会議
Itsuki Sugimura, Masaya Nakata, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Takayoshi Katase, and Masashi Kurosawa
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月14日
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Electrical activation of implanted phosphorus in GeSn epitaxial layers grown on Si(111) substrate 国際会議
Yoshiki Kato, Masahiro Fukuda, Shigehisa Shibayama, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
14th International Workshop on New Group IV Semiconductor Nanoelectronics 2023年12月15日
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Crystal Growth Technology of GeSn-related Group-IV Heteroepitaxial Layers 招待有り 国際会議
Osamu Nakatsuka, Shigehisa Shibayama, Masashi Kurosawa, and Mitsuo Sakashita
3rd Nucleation and Growth Research Conference (NGRC) 2023年11月10日
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Sputtering Heteroepitaxy of Ge0.75Sn0.25 Layer on InP(001) Substrate 国際会議
Taichi Kabeya, Shigehisa Shibayama, Komei Takagi, Mitsuo Sakashita, Masashi Kurosawa, and Osamu Nakatsuka
2023 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY 2023年10月25日