講演・口頭発表等 - 坂下 満男
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Molecular beam epitaxy of Si1-xSnx layers with 10%-Sn content on Si1-yGey buffers 国際会議
K. Fujimoto, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
2022 International Conference on Solid State Devices and Materials (SSDM 2022) 2022年9月
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Formation of ferroelectric ZrO2 film in ultra-thin region by sputtering method 国際会議
S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka
2022 International Conference on Solid State Devices and Materials (SSDM 2022) 2022年9月
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Substrate engineering for strain-controlled high-Sn-content Ge1-xSnx epitaxy 国際会議
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022) 2022年7月
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Enhancement of the Field-Effect Mobility of 4H-SiC Buried Channel n-MOSFETs by Using Al2O3 as a Gate Insulator 国際会議
T. Doi, S. Shibayama, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
2021 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2021 IWDTF)
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Optoelectronic properties of pseudo-direct transition n+-Ge1-xSnx and heterostructures composed of n+-Ge1-xSnx and n-SiyGe1-y 国際会議
S. Zhang, M. Sakashita, S. Shibayama, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)
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Schottky barrier height lowering for metal/n-type 4H-SiC contacts using low work function metals 国際会議
T. Doi, S. Shibayama, M. Sakashita, M. Shimizu, and O. Nakatsuka
International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)
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Enhancement of Channel Mobility in 4H-SiC Trench MOSFET by Inducing Stress at SiO2/SiC Gate Interface 国際会議
E. Kagoshima, W. Takeuchi, K. Kutsuki, M. Sakashita, H. Fujiwara, and O. Nakatsuka
2021 International Conference on Solid State Devices and Materials (SSDM 2021)
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Improved interface uniformity of epitaxial HfGe2/Ge(001) contact by microfabrication and its electron conduction property 招待有り 国際会議
K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka
20th International Workshop on Junction Technology 2021 (IWJT2021)
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Formation and Characterization of Ge1–x–ySixSny/Ge Heterojunction Structures for Photovoltaic Cell Application 国際会議
O. Nakatsuka, S. Asaba, M. Kurosawa, M. Sakashita, N. Taoka, and S. Zaima
ECS Meeting
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Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design 招待有り 国際会議
O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
ECS Meeting
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Understanding wet annealing effect on phase transition and ferroelectric phase formation for Hf1-xZrxO2 film 国際会議
S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka
SSDM2020 2020年9月28日
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In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity 国際会議
M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka
ISCSI-VIII
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Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices 招待有り 国際会議
O. Nakatsuka, M. Kurosawa, S. Shibayama, M. Sakashita and S. Zaima
ISCSI-VIII
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Ferroelectric Phase Evolution of Undoped ZrO2 Thin Film by Wet O2 Annealing Process 国際会議
S. Shibayama, J. Nagano, M. Sakashita, O. Nakatsuka
IWDTF
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Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface 国際会議
T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu and O. Nakatsuka
ICMaSS
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Optoelectronic Property of GeSn and GeSiSn Heterostructure 国際会議
M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka
ICMaSS
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Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET 国際会議
W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, and O. Nakatsuka
SSDM
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In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks 国際会議
T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka
SSDM
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GeSn and GeSiSn Heterostructures for Optoelectronic Applications 招待有り 国際会議
O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima
2019 IEEE Photonics Society Summer Topicals Meeting Series
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Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 国際会議
K. Senga, S. Shibayama, M. Sakashita, S. Zaima, and O. Nakatsuka
19th International Workshop on Junction Technology 2019 (IWJT2019)