講演・口頭発表等 - 坂下 満男
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Control of Electrical Property at Metal/Ge Interface with Group-IV Alloy Interlayer 国際会議
A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima
International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)
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Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
2017 International Conference on Solid State Devices and Materials (SSDM 2017)
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Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic 招待有り 国際会議
O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, S. Zaima
Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017)
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Development of GeSn and related semiconductor thin films for next generation optoelectronic applications 招待有り 国際会議
O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
2017 Global Conference on Polymer and Composite Materials (PCM 2017)
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Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer 国際会議
A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima
The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
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Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure 国際会議
M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
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Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
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Heavily p-type Doping to Si1-xSnx Layers Grown on SOI Substrates 国際会議
Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 11th International Conference on Plasma-Nano Technology and Science (ISPlasma 2018 / IC-PLANTS 2018)
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Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition 国際会議
W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and , S. Zaima
9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017)
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Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties 招待有り 国際会議
W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka and S. Zaima
10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack 国際会議
Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates 国際会議
I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima
10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers 国際会議
A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima
JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"
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Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"
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Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy 国際会議
W. Takeuchi, Y. Inuzuka, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium)
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Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact 国際会議
A. Suzuki, S. Toda, O. Nakatsuka, M. Sakashita, and S. Zaima
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor 国際会議
W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Challenges in Engineering Materials Properties for GeSn Nanoelectronics 招待有り 国際会議
S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita
The 2016 European Materials Research Society (E-MRS) Fall Meeting
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Growth and applications of GeSn-related group-IV semiconductor materials 国際会議
S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita
IEEE 2016 Summer Topicals Meeting Series