講演・口頭発表等 - 坂下 満男
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Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact 国際会議
A. Suzuki, S. Toda, O. Nakatsuka, M. Sakashita, and S. Zaima
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Effect of N bonding structure in AlON on leakage current of 4H-SiC MOS capacitor 国際会議
W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
2016 International Conference on Solid State Devices and Materials (SSDM 2016)
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Challenges in Engineering Materials Properties for GeSn Nanoelectronics 招待有り 国際会議
S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita
The 2016 European Materials Research Society (E-MRS) Fall Meeting
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Growth and applications of GeSn-related group-IV semiconductor materials 国際会議
S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita
IEEE 2016 Summer Topicals Meeting Series
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Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate 国際会議
I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
ISCSI-VII/ISTDM 2016
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Control of the Fermi level pinning position at metal/Ge interface by using Ge1-xSnx interlayer 国際会議
A. Suzuki, O. Nakatsuka, M. Sakashita, S. Zaima
ISCSI-VII/ISTDM 2016
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Development of GeSn thin film technology for electronic and optoelectronic applications 国際会議
O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
2016 EMN Summer Meeting & Photodetectors Meeting
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Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property 国際会議
S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, S. Zaima
ISPlasma 2016 / IC-PLANTS 2016
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Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties 国際会議
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima
ISPlasma 2016 / IC-PLANTS 2016
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Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer 国際会議
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers 国際会議
J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties 国際会議
S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka and S. Zaima
9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Schottky Barrier Engineering by Epitaxial Metal Germanide/Germanium Contacts 国際会議
O. Nakatsuka, Y. Deng, A. Suzuki, M. Sakashita, and S. Zaima
ISETS '15
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Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions 国際会議
W. Takeuchi, Y. Inuzuka, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima
ISETS '15
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Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer 国際会議
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
ISETS '15
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Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
ISETS '15
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Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications 国際会議
O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
IWAN 2015
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Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack 国際会議
M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
2015 IWDTF