Papers - UJIHARA, Toru
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4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions Reviewed
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura
Mater. Sci. Forum, Vol. 821-823 page： 9-13 2015
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Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent Reviewed
Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura
Materials Science Forum Vol. 821-823 page： 14-17 2015
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バルク結晶成長のこの10年
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌) Vol. 42 ( 1 ) page： pp.64-68 2015
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Non-uniform electrodeposition of zinc on the (0001) plane Reviewed
T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara
Thin Solid Films Vol. 590 page： pp. 207-213 2015
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Dislocation Conversion during SiC Solution Growth for High-quality Crystals Reviewed
S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
Vol. 821-823 page： pp. 3-8 2015
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Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal Reviewed
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara
Vol. 821-823 page： pp. 18-21 2015
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"Effect of forced convection by crucible design in solution growth of SiC single crystal" Reviewed
K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura
Vol. 821-823 page： pp. 22-25 2015
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Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura
J. Cryst. Growth Vol. 423 page： 45-49 2015
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"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" Reviewed
Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa
Journal of Crystal Growth Vol. 401 page： 494-498 2014.9
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"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" Reviewed
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura
Journal of Crystal Growth Vol. 401 page： 681-685 2014.9
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"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" Reviewed
Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Journal of Crystal Growth Vol. 395 page： 68-73 2014.6
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"Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth" Reviewed
Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto
Crystal Growth and Design Vol. 14 ( 7 ) page： 3596-3602 2014.6
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"Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth" Reviewed
Hiromasa Niinomi, Atsushi Horio, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Katsuo Tsukamoto
Journal of Crystal Growth Vol. 394 page： 106-111 2014.5
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"Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method" Reviewed
Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Daiki Koike, Miho Tagawa, and Toru Ujihara
Applied Physics Express Vol. 7 page： 065501 2014.5
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"Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent" Reviewed
Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara
Journal of Crystal Growth Vol. 392 page： 60-65 2014.4
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"The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy" Reviewed
T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda, and H. Ikuta
Superconductor Science and Technology Vol. 27 page： 065005 (6pp) 2014.4
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"Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents" Reviewed
Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Koji Moriguchi, Hiroshi Kaido, Hironori Daikoku, Motohisa Kado, Katsunori Danno, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Materials Science Forum Vol. 778-780 page： Pages 79-82 2014.2
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"Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC" Reviewed
Tomonori Umezaki, Daiki Koike, Atsushi Horio, Shunta Harada, Toru Ujihara
Materials Science Forum Vol. 778-780 page： 63-66 2014.2
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"Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent" Reviewed
Shunta Harada, Yuji Yamamoto, Shi Yu Xiao, Miho Tagawa, Toru Ujihara
Materials Science Forum Vol. 778-780 page： 67-70 2014.2
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"Growth of a smooth CaF2 layer on NdFeAsO thin film" Reviewed
N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada and H. Ikuta
Journal of Physics: Conference Series Vol. 507 ( 1 ) page： 012047 2014