Papers - UJIHARA, Toru
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Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles Reviewed
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, S. Harada, T. Ujihara
CrystEngComm Vol. 18 page： 7441-7448 2016
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Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents Reviewed
A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
Jpn. J. Appl. Phys Vol. 55 page： 01AC01 2016
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Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor Reviewed Open Access
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara
J. Cryst. Growth 2016
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Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC Reviewed
T. Umezaki, D. Koike, S. Harada, T. Ujihara
Japanese Journal of Applied Physics Vol. 55 ( 12 ) page： 125601 2016
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Two-step SiC solution growth for dislocation reduction Open Access
"K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"
J. Cryst. Growth 2016
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Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth Reviewed
Shiyu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 39-42 2015
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Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds Reviewed
Tomonori Umezaki, Daiki Koike, Shunta Harada and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 31-34 2015
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Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC Reviewed
Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige and Hajime Okumura
Materials Science Forum Vol. 821-823 page： 35-38 2015
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3C-SiC Crystal on Sapphire by Solution Growth Method Reviewed
Kenji Shibata, Shunta Harada and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 185-188 2015
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4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions Reviewed
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura
Mater. Sci. Forum, Vol. 821-823 page： 9-13 2015
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Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent Reviewed
Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura
Materials Science Forum Vol. 821-823 page： 14-17 2015
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バルク結晶成長のこの10年 Open Access
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌) Vol. 42 ( 1 ) page： pp.64-68 2015
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Non-uniform electrodeposition of zinc on the (0001) plane Reviewed Open Access
T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara
Thin Solid Films Vol. 590 page： pp. 207-213 2015
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Dislocation Conversion during SiC Solution Growth for High-quality Crystals Reviewed
S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
Vol. 821-823 page： pp. 3-8 2015
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Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal Reviewed
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara
Vol. 821-823 page： pp. 18-21 2015
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"Effect of forced convection by crucible design in solution growth of SiC single crystal" Reviewed
K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura
Vol. 821-823 page： pp. 22-25 2015
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Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura
J. Cryst. Growth Vol. 423 page： 45-49 2015
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"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" Reviewed
Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa
Journal of Crystal Growth Vol. 401 page： 494-498 2014.9
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"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" Reviewed
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura
Journal of Crystal Growth Vol. 401 page： 681-685 2014.9
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"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" Reviewed
Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Journal of Crystal Growth Vol. 395 page： 68-73 2014.6