Papers - UJIHARA, Toru
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Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima
Mat. Sci. Eng. B Vol. 89 page： 364-367 2002
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In-situ monitoring system of the position and temperature at the crystal-solution interface Reviewed
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth Vol. 236 page： 364-367 2002
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Crystal growth of silicon-germanium homogeneous bulk crystal and related measurement Open Access
J. Japanese association for crystal growth Vol. 29 ( 5 ) page： 339 2002
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*Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth Vol. 242 page： 313-320 2002
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New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth Vol. 241 page： 387-394 2002
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Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution Reviewed
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima, and H. Yaguchi
Jpn. J. Appl. Phys. Vol. 41 page： L37-L39 2002
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In-situ observation of the Marangoni convection of a NaCl aqueous solutions under microgravity Reviewed
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, N. Usami, and K. Nakajima
J. Crystal Growth Vol. 234 page： 516-522 2002
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Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique Reviewed
Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima
page： 408-411 2002
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Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency Reviewed
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
page： 247-249 2002
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Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties Reviewed
Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Yoshihiro Murakami, Kuninori Kitahara and Kazuo Nakajima
page： 1339-1342 2002
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Assessing composition gradient energy effects due to spin interaction on the spinodal decomposition of Fe-Cr Reviewed
T. Ujihara, K. Osamura
Mater. Sci. Eng. A Vol. 312 page： 128 2001
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Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K.Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa, and S. Kodama
Semicon. Sci. and Technol. Vol. 16 page： 699-703 2001
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Effects of misfit dislocation and AlN buffer layer on the GaInN/GaN phase diagram of the growth modes Reviewed
K. Nakajima, T. Ujihara, and G. Sazaki
J. Appl. Phys. Vol. 89 page： 146-153 2001
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Growth of SixGe1-x (x=0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal-Solution Interface Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami, and K.Nakajima
Jpn. J. Appl. Phys. Vol. 44 page： 4141-4144 2001
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Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in-situ monitoring system Reviewed
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, and K. Nakajima
J. Crystal Growth Vol. 224 page： 204-211 2001
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Physical model for the evaluation of solid-liquid interfacial tension in silicon Reviewed
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, K. Nakajima
J. Appl. Phys. Vol. 90 page： 750-755 2001
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Kinetic analysis of spinodal decomposition process in Fe-Cr alloys by small angle neutron scattering Reviewed
T. Ujihara, K. Osamura
Acta Materialia Vol. 48 page： 1629-1637 2000
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Effects of the dislocation density and surface energy on phase diagrams of the S-K mode for the GaInN/GaN and GaPSb/GaP systems Reviewed
K. Nakajima, T. Ujihara, S. Miyashita, and G. Sazaki
In Mat. Res. Soc. Symp. Proc. Vol. 618 page： 285-290 2000
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"Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies" Reviewed
K. Nakajima, T. Ujihara, G. Sazaki, and N. Usami
J. Crystal Growth Vol. 220 page： 413-424 2000
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SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, Y. Yakabe, T. Kondo, S. Koh, B. Zhang, Y. Segawa,Y. Shiraki, S. Kodama, and K. Nakajima
Appl. Phys. Lett. Vol. 77 page： 3565-3567 2000