Papers - UJIHARA, Toru
-
Effect of Solution Components on Solvent Inclusion in SiC Solution Growth Reviewed
Huiqin Zhou, Hitoshi Miura, Yuma Fukami, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara
Crystal Growth & Design Vol. 24 ( 4 ) page： 1806 - 1817 2024.2
-
Machine Learning for Semiconductor Process Simulation Described by Coupled Partial Differential Equations Reviewed
Sato, R ; Kutsukake, K ; Harada, S ; Tagawa, M ; Ujihara
ADVANCED THEORY AND SIMULATIONS 2023.7
-
Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions Reviewed
Zhou, HQ (Zhou, Huiqin); Miura, H (Miura, Hitoshi); Dang, YF (Dang, Yifan); Fukami, Y (Fukami, Yuma); Takemoto, H (Takemoto, Hisaki); Harada, S (Harada, Shunta); Tagawa, M (Tagawa, Miho); Ujihara, T (Ujihara, Toru)
CRYSTAL GROWTH & DESIGN Vol. 23 ( 5 ) page： 3393 - 3401 2023.5
-
Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC Reviewed
Dang, Yifa , Liu, Xinbo,Zhu, Can, Fukami, Yuma,Ma, Shuyang , Zhou, Huiqin ,Liu, Xin ,Kutsukake, Kentaro, Harada, Shunta , Ujihara, Toru
CRYSTAL GROWTH & DESIGN page： 1023 - 1032 2023.2
-
Thermal conduction in titanium-chromium oxide natural superlattices with an ordered arrangement of nearly pristine interfaces Reviewed
Shunya Sugimoto, Gareoung Kim, Tsunehiro Takeuchi, Miho Tagawa, Toru Ujihara, Shunta Harada
Journal of Alloys and Compounds Vol. 934 2023.2
-
非弾性Ｘ線散乱によるルチル型酸化チタンのフォノン分散測定 Reviewed
原田 俊太, 小坂 直輝, 筒井 智嗣, 田中 克志, 田川 美穂, 宇治原 徹
SPring-8/SACLA利用研究成果集 Vol. 10 ( 6 ) page： 521 - 523 2022.12
-
Bayesian Optimization for Cascade-Type Multistage Processes Reviewed
Kusakawa, S,Takeno, S , Inatsu, Y, Kutsukake, K, Iwazaki, S,Nakano, T , Ujihara, T,Karasuyama, M ,Takeuchi, I
NEURAL COMPUTATION Vol. 34 ( 12 ) page： 2408 - 2431 2022.11
-
Thermal conduction in titanium-chromium oxide natural superlattices with an ordered arrangement of nearly pristine interfaces Reviewed
Shunya Sugimoto, Gareoung Kim, Tsunehiro Takeuchi, Miho Tagawa, Toru Ujihara, Shunta Harada
SSRN 2022.10
-
Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC Reviewed
Masaru Isono,Shunta Harada,Kentaro Kutsukake,Tomoo Yokoyama,Miho Tagawa,Toru Ujihara
ADVANCED THEORY AND SIMULATIONS Vol. 5 ( 9 ) 2022.7
-
A Transfer Learning-Based Method for Facilitating the Prediction of Unsteady Crystal Growth Reviewed
Yifan Dang,Kentaro Kutsukake,Xin Liu,Yoshiki Inoue,Xinbo Liu,Shota Seki,Can Zhu,Shunta Harada,Miho Tagawa,Toru Ujihara
ADVANCED THEORY AND SIMULATIONS Vol. 5 ( 9 ) 2022.7
-
Designing a High-Crystallinity Nano-Gapped Particle Superlattice via DNA-Guided Colloidal Crystallization and Dehydration Reviewed
Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto, and Miho Tagawa
Crystal Growth＆Design Vol. 22 ( 6 ) page： 3708 - 3718 2022.4
-
Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs Reviewed
Kumiko Konishi, Ryusei Fujita, Keisuke Kobayashi, Akio Yoneyama, Kotaro Ishiji, Hiroyuki Okino, Akio Shima, Toru Ujihara
AIP Advances 12 2022.3
-
Crossover from incoherent to coherent thermal conduction in bulk titanium oxide natural superlattices
Harada Shunta, Kosaka Naoki, Yagi Takashi, Sugimoto Shunya, Tagawa Miho, Ujihara Toru
SCRIPTA MATERIALIA Vol. 208 2022.2
-
Numerical investigation of solute evaporation in crystal growth from solution: A case study of SiC growth by TSSG method
Yifan Dang, Can Zhu, Xin Liu, Wancheng Yu, Xinbo Liu, Koki Suzuki, Tomoaki Furusho, Shunta Harada, Miho Tagawa, Toru Ujihara
Journal of Crystal Growth 2022.2
-
Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification Reviewed
Xin Liu, Yifan Dang, Hiroyuki Tanaka, Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Toru Ujihara, Noritaka Usami
ACS OMEGA Vol. 7 ( 8 ) page： 6665 - 6673 2022.2
-
Solvent design aiming at solution property induced surface stability: A case study using SiC solution growth
Liu Xinbo, Dang Yifan, Suzuki Koki, Zhu Can, Yu Wancheng, Harada Shunta, Tagawa Miho, Ujihara Toru
JOURNAL OF CRYSTAL GROWTH Vol. 578 2022.1
-
High fracture toughness AlN achieved by addition of AlN whiskers and tape-casting
Shimizu Hiroki, Kondo Naoki, Shimamura Akihiro, Hotta Mikinori, Harada Shunta, Ujihara Toru, Ohnishi Yoshihiro
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN Vol. 130 ( 1 ) page： 195 - 198 2022.1
-
Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography
Fujie Fumihiro, Harada Shunta, Suo Hiromasa, Raghothamachar Balaji, Dudley Michael, Hanada Kenji, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru
MATERIALIA Vol. 20 2021.12
-
Bayesian Optimization for Cascade-type Multi-stage Processes Reviewed
Shunya Kusakawa, Shion Takeno, Yu Inatsu, Kentaro Kutsukake, Shogo Iwazaki, Takashi Nakano, Toru Ujihara, Masayuki Karasuyama, Ichiro Takeuchi
arXiv:2111 2021.11
-
In-operando x-ray topography analysis of SiC metal-oxide-semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations Reviewed
Konishi Kumiko, Fujita Ryusei, Kobayashi Keisuke, Yoneyama Akio, Ishiji Kotaro, Okino Hiroyuki, Shima Akio, Ujihara Toru
JOURNAL OF APPLIED PHYSICS Vol. 130 ( 14 ) 2021.10
-
Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals Reviewed
Ailihumaer Tuerxun, Peng Hongyu, Fujie Fumihiro, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Ujihara Toru
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS Vol. 271 2021.9
-
Two-Step Nanoparticle Crystallization via DNA-Guided Self-Assembly and the Nonequilibrium Dehydration Process
Sumi Hayato, Ohta Noboru, Sekiguchi Hiroshi, Harada Shunta, Ujihara Toru, Tsukamoto Katsuo, Tagawa Miho
CRYSTAL GROWTH & DESIGN Vol. 21 ( 8 ) page： 4506 - 4515 2021.8
-
Y Local Atomic Structures for Tunable Ordered Arrangements of Crystallographic Shear Planes in Titanium-Chromium Oxide Natural Superlattices Reviewed
Harada Shunta, Sugimoto Shunya, Kosaka Naoki, Tagawa Miho, Ujihara Toru
JOURNAL OF PHYSICAL CHEMISTRY C Vol. 125 ( 28 ) page： 15730 - 15736 2021.7
-
Control of microstructure and mechanical properties of sintered aluminum nitride through addition of aluminum nitride whiskers Reviewed
Kondo Naoki, Shimamura Akihiro, Hotta Mikinori, Shimizu Hiroki, Ujihara Toru, Ohnishi Yoshihiro
JOURNAL OF ASIAN CERAMIC SOCIETIES Vol. 9 ( 3 ) page： 1248 - 1254 2021.7
-
Ordered Arrangement of Planar Faults with Picoscale Perfection in Titanium Oxide Natural Superlattices Reviewed
Harada Shunta, Kosaka Naoki, Tagawa Miho, Ujihara Toru
JOURNAL OF PHYSICAL CHEMISTRY C Vol. 125 ( 20 ) page： 11175 - 11181 2021.5
-
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC Reviewed
Fujie Fumihiro, Peng Hongyu, Ailihumaer Tuerxun, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Tagawa Miho, Ujihara Toru
ACTA MATERIALIA Vol. 208 2021.4
-
Geometrical design of a crystal growth system guided by a machine learning algorithm Reviewed
Yu Wancheng, Zhu Can, Tsunooka Yosuke, Huang Wei, Dang Yifan, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTENGCOMM Vol. 23 ( 14 ) page： 2695 - 2702 2021.4
-
Intensity Interference in a Coherent Spin-Polarized Electron Beam
Kuwahara Makoto, Yoshida Yuya, Nagata Wataru, Nakakura Kojiro, Furui Masato, Ishida Takafumi, Saitoh Koh, Ujihara Toru, Tanaka Nobuo
PHYSICAL REVIEW LETTERS Vol. 126 ( 12 ) 2021.3
-
Chiral Optical Force Generated by a Superchiral Near-Field of a Plasmonic Triangle Trimer as Origin of Giant Bias in Chiral Nucleation: A Simulation Study Reviewed
Niinomi Hiromasa, Sugiyama Teruki, Cheng An-Chieh, Tagawa Miho, Ujihara Toru, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi
JOURNAL OF PHYSICAL CHEMISTRY C Vol. 125 ( 11 ) page： 6209 - 6221 2021.3
-
Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth
Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTENGCOMM Vol. 23 ( 9 ) page： 1982 - 1990 2021.3
-
Detection and classification of dislocations in GaN by optical microscope using birefringence
Atsushi Tanaka, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, and Hiroshi Amano,
Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV ( 117060Y ) 2021.3
-
Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy
Kokubo Nobuhiko, Tsunooka Yosuke, Inotsume Sho, Fujie Fumihiro, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SA ) 2021.1
-
Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth Reviewed
Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
CrystEngComm Vol. 23 ( (8) ) 2021.1
-
Geometrical design of a crystal growth system guided by a machine learning algorithm Reviewed
Wancheng Yu, Can Zhu, Yosuke Tsunooka, Wei Huang, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara
CrystEngComm 2021
-
Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal Reviewed
Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
Vol. 16 ( 1 ) 2021
-
Adaptive Bayesian optimization for epitaxial growth of Si thin films under various constraints Reviewed
Osada Keiichi, Kutsukake Kentaro, Yamamoto Jun, Yamashita Shigeo, Kodera Takashi, Nagai Yuta, Horikawa Tomoyuki, Matsui Kota, Takeuchi Ichiro, Ujihara Toru
Vol. 25 2020.12
-
Optimal Control of SiC Crystal Growth in the RF-TSSG System Using Reinforcement Learning Reviewed
Wang Lei, Sekimoto Atsushi, Takehara Yuto, Okano Yasunori, Ujihara Toru, Dost Sadik
Vol. 10 ( 9 ) 2020.9
-
Plasmonic Manipulation of Sodium Chlorate Chiral Crystallization: Directed Chirality Transfer via Contact-Induced Polymorphic Transformation and Formation of Liquid Precursor Reviewed
Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Ujihara Toru, Omatsu Takashige, Miyamoto Katsuhiko, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi
CRYSTAL GROWTH & DESIGN Vol. 20 ( 8 ) page： 5493 - 5507 2020.8
-
Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography Reviewed
Fujie Fumihiro, Harada Shunta, Hanada Kenji, Suo Hiromasa, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru
ACTA MATERIALIA Vol. 194 page： 387 - 393 2020.8
-
Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method Reviewed
Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4
-
Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer Reviewed
Inotsume Sho, Kokubo Nobuhiko, Yamada Hisashi, Onda Shoichi, Kojima Jun, Ohara Junji, Harada Shunta, Tagawa Miho, Ujihara Toru
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4
-
Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes Reviewed
Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru
ACS APPLIED MATERIALS & INTERFACES Vol. 12 ( 8 ) page： 9341 - 9346 2020.2
-
Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation Reviewed
Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH Vol. 532 2020.2
-
Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field
Wang Lei, Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
CRYSTALS Vol. 10 ( 2 ) 2020.2
-
Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3 Reviewed
Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mitsuaki Shimizu
Phys. Status Solidi B Vol. 257 ( 2 ) page： 1900318 2020
-
Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal Reviewed
Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTENGCOMM Vol. 21 ( 47 ) page： 7260 - 7265 2019.12
-
Semi in-situ measurement of zincate ion concentration near zinc anode using background-oriented Schlieren technique Reviewed
Ito Yasumasa, Liang Xiao, Ishikawa Kohei, Ujihara Toru, Sakai Yasuhiko, Iwano Koji
Vol. 1 ( 3 ) 2019.12
-
Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method Reviewed
Wang L., Horiuchi T., Sekimoto A., Okano Y., Ujihara T., Dost S.
JOURNAL OF CRYSTAL GROWTH Vol. 520 page： 72 - 81 2019.8
-
Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process Reviewed
Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH Vol. 517 page： 59 - 63 2019.7
-
In Situ Microscopic Observation on Surface Kinetics in Optical Trapping-Induced Crystal Growth: Step Formation, Wetting Transition, and Nonclassical Growth Reviewed
Niinomi Hiromasa, Sugiyama Teruki, Ujihara Toru, Guo Suxia, Nozawa Jun, Okada Junpei, Omatsu Takashige, Uda Satoshi
CRYSTAL GROWTH & DESIGN Vol. 19 ( 7 ) page： 4138 - 4150 2019.7
-
Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4HSiC Wafer Fabricated by the Solution Growth Method Reviewed
Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Toru Ujihara
Mater. Sci. Forum Vol. 963 page： 80-84 2019.7
-
Nondestructive visualization of threading dislocations in GaN by micro raman mapping Reviewed
Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6
-
The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide
Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Yamamoto Takuya, Ujihara Toru, Dost Sadik
CRYSTAL RESEARCH AND TECHNOLOGY Vol. 54 ( 5 ) 2019.5
-
Plasmonic Trapping-Induced Crystallization of Acetaminophen Reviewed
Niinomi Hiromasa, Sugiyama Teruki, Uda Satoshi, Tagawa Miho, Ujihara Toni, Miyamoto Katsuhiko, Omatsu Takashige
CRYSTAL GROWTH & DESIGN Vol. 19 ( 2 ) page： 529-537 2019.2
-
機械学習を用いた結晶成長予測モデルの構築とその応用
宇治原 徹, 角岡 洋介, 畑佐 豪記, 沓掛 健太朗, 石黒 祥生, 村山 健太, 鳴海 大翔, 原田 俊太, 田川 美穂
表面と真空 Vol. 62 ( 3 ) page： 136-140 2019
-
少量添加で樹脂素材の熱伝導率を向上させるAlNウィスカーフィラーの開発
宇治原 徹
エレクトロニクス実装学会誌 Vol. 22 ( 3 ) page： 195-198 2019
-
結晶成長学的見地による金属負極の析出形態と結晶方位の相関解明
石川 晃平, 三橋 貴仁, 伊藤 靖仁, 竹内 幸久, 原田 俊太, 田川 美穂, 宇治原 徹
日本結晶成長学会誌 Vol. 46 ( 1 ) page： 136-140 2019
-
Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC Reviewed
Wang Lei, Horiuchi Takashi, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH Vol. 498 page： 140 - 147 2018.9
-
In Situ Observation of Chiral Symmetry Breaking in NaClO3 Chiral Crystallization Realized by Thermoplasmonic Micro-Stirring Reviewed
Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Harada Shunta, Ujihara Tom, Uda Satoshi, Miyamoto Katsuhiko, Omatsu Takashige
CRYSTAL GROWTH & DESIGN Vol. 18 ( 8 ) page： 4230 - 4239 2018.8
-
Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state Reviewed
Ichihashi Fumiaki, Dong Xinyu, Inoue Akito, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru
REVIEW OF SCIENTIFIC INSTRUMENTS Vol. 89 ( 7 ) 2018.7
-
Detection of edge component of threading dislocations in GaN by Raman spectroscopy
Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Hara Kazukuni, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru
APPLIED PHYSICS EXPRESS Vol. 11 ( 6 ) 2018.6
-
Dislocation Behavior in Bulk Crystals Grown by TSSG Method Reviewed
K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara
Mater. Sci. Forum Vol. 924 page： 39-42 2018
-
Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method Reviewed
K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara
Mater. Sci. Forum Vol. 924 page： 60-63 2018
-
Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation Reviewed
F. Fujie, S. Harada, H. Koizumi, K. Murayama, K. Hanada, M. Tagawa, T. Ujihara
Appl. Phys. Lett Vol. 113 page： 012101 2018
-
Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping
N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M.Shimizu, S. Harada, M. Tagawa, T. Ujihara
Appl. Phys. Express Vol. 11 page： 111001 2018
-
Improvement mechanism of sputtered AlN films by high-temperature annealing Reviewed
S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara
J. Cryst. Growth Vol. 502 page： 41-44 2018
-
High-speed prediction of computational fluid dynamics simulation in crystal growth Reviewed
Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara
CrystEngComm Vol. 20 page： 6546 - 6550 2018
-
Importance of Hydration State around Proteins Required to Grow High-Quality Protein Crystals Reviewed
H. Koizumi, S. Uda, K. Tsukamoto, K. Kojima, M. Tachibana, T. Ujihara
Cryst. Growth Des Vol. 18 page： 4749-4755 2018
-
Coherent pulse beam in spin-polarized TEM using an NEA photocathode Reviewed
Kuwahara M., Ujihara T., Saitoh K., Tanaka N.
2018 31ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) page： . 2018
-
Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photoemission measurements
Ichihashi Fumiaki, Kawaguchi Takahiko, Dong Xinyu, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru
AIP ADVANCES Vol. 7 ( 11 ) 2017.11
-
Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method Reviewed
Yamamoto Takuya, Adkar Nikhil, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH Vol. 474 page： 50-54 2017.9
-
Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation Reviewed
Yamamoto Takuya, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH Vol. 470 page： 75-88 2017.7
-
Morphology of AlN whiskers grown by reacting N-2 gas and Al vapor
Matsumoto M., Saitou H., Takeuchi Y., Harada S., Tagawa M., Ujihara T.
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 576-580 2017.6
-
Two-step SiC solution growth for dislocation reduction
Murayama K., Hori T., Harada S., Xiao S., Tagawa M., Ujihara T.
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 874-878 2017.6
-
Phase transition process in DDAB supported lipid bilayer Reviewed
Isogai Takumi, Nakada Sakiko, Yoshida Naoya, Sumi Hayato, Tero Ryugo, Harada Shunta, Ujihara Toru, Tagawa Miho
JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 88-92 2017.6
-
SiC solution growth on Si face with extremely low density of threading screw dislocations for suppression of polytype transformation Reviewed
K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara
Mater. Sci. Forum Vol. 897 page： 24-27 2017.5
-
Solvent design for high-purity SiC solution growth Reviewed
S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara
Mater. Sci. Forum Vol. 897 page： 32-35 2017.5
-
Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth Reviewed
T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara
Mater. Sci. Forum Vol. 897 page： 28-31 2017.5
-
Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors Reviewed
Ishikawa Kohei, Ito Yasumasa, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTAL GROWTH & DESIGN Vol. 17 ( 5 ) page： 2379-2385 2017.5
-
Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaCIO3 Unsaturated Mother Solution Reviewed
Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Maruyama Mihoko, Ujihara Toru, Omatsu Takashige, Mori Yusuke
CRYSTAL GROWTH & DESIGN Vol. 17 ( 2 ) page： 809-818 2017.2
-
Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents Reviewed
Komatsu Naoyoshi, Mitani Takeshi, Hayashi Yuichiro, Kato Tomohisa, Harada Shunta, Ujihara Toru, Okumura Hajime
JOURNAL OF CRYSTAL GROWTH Vol. 458 page： 37-43 2017.1
-
Phase transition process in DDAB supported lipid bilayer
"T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa"
J. Cryst. Growth Vol. 468 page： 88-92 2017
-
Septin Interferes with the Temperature-Dependent Domain Formation and Disappearance of Lipid Bilayer Membranes Reviewed
S. Yamada, T. Isogai, R. Tero, Y. Tanaka-Takiguchi, T. Ujihara, M. Kinoshita, K. Takiguchi
Langmuir page： 12823–12832 2016.11
-
Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth Reviewed
S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara
Cryst. Growth Des. page： 6436–6439 2016.10
-
Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles Reviewed
H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara
CrystEngComm Vol. 18 ( 39 ) page： 7441-7448 2016.7
-
Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis
"S. Xiao, S. Harada, K. Murayama, T. Ujihara"
Cryst. Growth Des. Vol. 16 ( 9 ) page： 5136-5140 2016.7
-
Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer Reviewed
T. Isogai, E. Akada, S. Nakada, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa
Japanese Journal of Applied Physics Vol. 55 ( 3S2 ) page： 03DF11 2016.3
-
Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method Reviewed
Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara
Mater. Sci. Forum, Vol. 858 page： 57-60 2016
-
High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent Reviewed
S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara
Mater. Sci. Forum, Vol. 858 page： 1210-1213 2016
-
The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode Reviewed
Makoto Kuwahara, Yoshito Nambo, Kota Aoki, Kensuke Sameshima, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Koh Saitoh, Yoshikazu Takeda and Nobuo Tanaka
Appl. Phys. Lett. Vol. 109 page： 013108 2016
-
Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC Reviewed
T. Umezaki, D. Koike, S. Harada, T. Ujihara
Japanese Journal of Applied Physics Vol. 55 ( 12 ) page： 125601 2016
-
Two-step SiC solution growth for dislocation reduction
"K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"
J. Cryst. Growth 2016
-
Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor Reviewed
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara
J. Cryst. Growth 2016
-
Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution Reviewed
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T.Omatsu, Y. Mori
Cryst. Growth Des. 2016
-
Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles Reviewed
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, S. Harada, T. Ujihara
CrystEngComm Vol. 18 page： 7441-7448 2016
-
Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents Reviewed
A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
Jpn. J. Appl. Phys Vol. 55 page： 01AC01 2016
-
Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth Reviewed
Shiyu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 39-42 2015
-
Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds Reviewed
Tomonori Umezaki, Daiki Koike, Shunta Harada and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 31-34 2015
-
Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC Reviewed
Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige and Hajime Okumura
Materials Science Forum Vol. 821-823 page： 35-38 2015
-
3C-SiC Crystal on Sapphire by Solution Growth Method Reviewed
Kenji Shibata, Shunta Harada and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 185-188 2015
-
4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions Reviewed
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura
Mater. Sci. Forum, Vol. 821-823 page： 9-13 2015
-
Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent Reviewed
Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura
Materials Science Forum Vol. 821-823 page： 14-17 2015
-
バルク結晶成長のこの10年
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志
JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌) Vol. 42 ( 1 ) page： pp.64-68 2015
-
Non-uniform electrodeposition of zinc on the (0001) plane Reviewed
T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara
Thin Solid Films Vol. 590 page： pp. 207-213 2015
-
Dislocation Conversion during SiC Solution Growth for High-quality Crystals Reviewed
S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
Vol. 821-823 page： pp. 3-8 2015
-
Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal Reviewed
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara
Vol. 821-823 page： pp. 18-21 2015
-
"Effect of forced convection by crucible design in solution growth of SiC single crystal" Reviewed
K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura
Vol. 821-823 page： pp. 22-25 2015
-
Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura
J. Cryst. Growth Vol. 423 page： 45-49 2015
-
"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" Reviewed
Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa
Journal of Crystal Growth Vol. 401 page： 494-498 2014.9
-
"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" Reviewed
Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura
Journal of Crystal Growth Vol. 401 page： 681-685 2014.9
-
"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" Reviewed
Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Journal of Crystal Growth Vol. 395 page： 68-73 2014.6
-
"Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth" Reviewed
Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto
Crystal Growth and Design Vol. 14 ( 7 ) page： 3596-3602 2014.6
-
"Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth" Reviewed
Hiromasa Niinomi, Atsushi Horio, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Katsuo Tsukamoto
Journal of Crystal Growth Vol. 394 page： 106-111 2014.5
-
"Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method" Reviewed
Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Daiki Koike, Miho Tagawa, and Toru Ujihara
Applied Physics Express Vol. 7 page： 065501 2014.5
-
"Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent" Reviewed
Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara
Journal of Crystal Growth Vol. 392 page： 60-65 2014.4
-
"The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy" Reviewed
T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda, and H. Ikuta
Superconductor Science and Technology Vol. 27 page： 065005 (6pp) 2014.4
-
"Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents" Reviewed
Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Koji Moriguchi, Hiroshi Kaido, Hironori Daikoku, Motohisa Kado, Katsunori Danno, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara
Materials Science Forum Vol. 778-780 page： Pages 79-82 2014.2
-
"Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC" Reviewed
Tomonori Umezaki, Daiki Koike, Atsushi Horio, Shunta Harada, Toru Ujihara
Materials Science Forum Vol. 778-780 page： 63-66 2014.2
-
"Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent" Reviewed
Shunta Harada, Yuji Yamamoto, Shi Yu Xiao, Miho Tagawa, Toru Ujihara
Materials Science Forum Vol. 778-780 page： 67-70 2014.2
-
"Growth of a smooth CaF2 layer on NdFeAsO thin film" Reviewed
N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada and H. Ikuta
Journal of Physics: Conference Series Vol. 507 ( 1 ) page： 012047 2014
-
"Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope" Reviewed
Makoto Kuwahara, Soichiro Kusunoki, Yoshito Nambo, Koh Saitoh, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Yoshikazu Takeda and Nobuo Tanaka
Appl. Phys. Lett. Vol. 105 ( 193101 ) 2014
-
Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy
F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th page： 2882-2885 2014
-
"Critical current density and grain boundary property of BaFe2(As,P)2 thin films" Reviewed
A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta
Physica C: Superconductivity,Proceedings of the 25th International Symposium on Superconductivity (ISS 2012) Advances in Superconductivity XXV Vol. 494 page： 181–184 2013.11
-
Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM Reviewed
Makoto Kuwahara,Yoshito Nambo, Soichiro Kusunoki, Xiuguang Jin, Koh Saitoh, Hidefumi Asano, Toru Ujihara, Yoshikazu Takeda, Tsutomu Nakanishi and Nobuo Tanaka
Microscopy Advance Access page： pp.1-8 2013.6
-
"Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals" Reviewed
Can Zhu, Shunta Harada, Kazuaki Seki, Huayu Zhang, Hiromasa Niinomi, Miho Tagawa, and Toru Ujihara
Cryst. Growth Des. Vol. 13 ( (8) ) page： 3691-3696 2013.6
-
"Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth" Reviewed
Materials Science Forum Vol. 740-742 page： pp.15-18 2013.1
-
"Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC" Reviewed
Materials Science Forum Vol. 740-742 page： 189-192 2013.1
-
"Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method" Reviewed
Materials Science Forum Vol. 740-742 page： pp.311-314 2013.1
-
Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method Reviewed
H. Matsubara, K. Mizuno, Y. Takeuchi, S. Harada, Y. Kitou, E. Okuno, and T. Ujihara,
Vol. 52 page： 08JE17 (4 pages). 2013
-
"Evolution of threading screw dislocation conversion during solution growth of 4H-SiC" Reviewed
S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, and T. Ujihara
APL Mater. Vol. 1 ( 2 ) page： 022109 (7 pages) 2013
-
超高品質SiC溶液成長 Reviewed
宇治原徹, 原田俊太, 山本祐治, 関和明
応用物理 Vol. 82 ( 4 ) page： 326-329 2013
-
SiC 結晶成長における多形制御 ～速度論的多形制御法の提案（3C-SiC 溶液成長を例に）～ Reviewed
関 和明、原田 俊太、宇治原 徹
日本結晶成長学会誌 Vol. 40 ( 4 ) page： 253-260 2013
-
SiC溶液成長の最近の展開 Reviewed
原田 俊太、山本 祐治、関 和明、宇治原 徹
日本結晶成長学会誌 Vol. 40 page： 25-32 2013
-
"Achiral Metastable Crystals of Sodium Chlorate Forming Prior to Chiral Crystals in Solution Growth" Reviewed
Hiromasa Niinomi, Tomoya Yamazaki, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Takahiro Kuribayashi, Makio Uwaha, and Katsuo Tsukamoto
Cryst. Growth Des. Vol. 13 ( 12 ) page： pp.5188-5192 2013
-
“Polytype-selective growth of SiC by supersaturation control in solution growth Original Research Article” Reviewed
Journal of Crystal Growth Vol. 360 page： 176-180. 2012.12
-
Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation Reviewed
Xiuguang Jin, Hirotaka Nakahara, Koh Saitoh, Takashi Saka, Toru Ujihara, Nobuo Tanaka, Yoshikazu Takeda
Journal of Crystal Growth Vol. 353 ( 1 ) page： 84-87 2012.8
-
Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth Reviewed
Toru Ujihara, Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Shunta Harada
Materials Science Forum Vol. 717–720 page： 351-354 2012.5
-
Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Reviewed
Yuji Yamamoto, Kazuaki Seki, Shigeta Kozawa, Alexander, Shunta Harada, Toru Ujihara
Materials Science Forum Vol. 717–720 page： 53-56 2012.5
-
Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films Reviewed
Hiroki Uemura, Takahiko Kawaguchi, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda, Hiroshi Ikuta
Solid State Communications Vol. 152 ( 8 ) page： 735-739 2012.4
-
30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode Reviewed
M. Kuwahara, S. Kusunoki, X. G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, and N. Tanaka
Appl. Phys. Lett. Vol. 101 page： 033102 2012
-
Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth Reviewed
Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Can Zhu, Yuta Yamamoto, Shigeo Arai, Jun Yamasaki, Nobuo Tanaka, and Toru Ujihara
Crystal Growth & Design Vol. 12 ( (6) ) page： 3209-3214 2012
-
“Development of Spin-Polarized and Pulsed TEM “ Reviewed
Vol. 371 page： 012004 2012
-
“High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth” Reviewed
Vol. 5 page： 115501 (3 pages). 2012
-
Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system Reviewed
Kazuaki Seki, Alexander, Shigeta Kozawa, Toru Ujihara, Patrick Chaudouët, Didier Chaussende, Yoshikazu Takeda
Journal of Crystal Growth Vol. 335 ( 1 ) page： 94-99 2011.11
-
High-quality and large-area 3C-SiC growth on 6H-SiC(0 0 0 1) seed crystal with top-seeded solution method. Reviewed
Toru Ujihara, Kazuaki Seki, Ryo Tanaka, Shigeta Kozawa, Alexander, Kai Morimoto, Katsuhiro Sasaki, Yoshikazu Takeda
Journal of Crystal Growth Vol. 318 page： pp 389-393. 2011
-
Anomalous Diffusion in Supported Lipid Bilayers Induced by Oxide Surface Nanostructures Reviewed
Ryugo Tero, Gen Sazaki, Toru Ujihara, and Tsuneo Urisu
Vol. 27 page： 9662-9665 2011
-
Development of spin-polarized transmission electron microscope Reviewed
M. Kuwahara, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi and N Tanaka
Vol. 298 page： 012016 2011
-
Polytype stability of 4H-SiC seed crystal on solution growth Reviewed
Alexander, K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara and Y. Takeda
Materials Science Forum Vol. 679-680 page： pp 24-27 2011
-
Defect evaluation of SiC crystal grown by solution method: the study by synchrotron X-ray topography and etching method Reviewed
S. Kozawa, K. Seki, Alexander, Y. Yamamoto, T. Ujihara and Y. Takeda
Materials Science Forum Vol. 679-680 page： pp 28-31 2011
-
Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness. Reviewed
Kazuma Tani, Shingo Fuchi, Ryota Mizutani, Toru Ujihara, Yoshikazu Takeda
Journal of Crystal Growth Vol. 318 page： pp 1113-1116 2011
-
Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method Reviewed
Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda and Hiroshi Ikuta
Appl. Phys. Express Vol. 4 page： 083102 (3 pages) 2011
-
Epitaxial growth of LaFeAs(O,F) thin films by molecular beam epitaxy Reviewed
T. Kawaguchi , H. Uemura , T. Ohno , M. Tabuchi , T. Ujihara , K. Takenaka , Y. Takeda , H. Ikuta
Physica C: Superconductivity Vol. Volume 471 ( Issues 21-22 ) page： pp. 1174-1176 2011
-
Status of the high brightness polarized electron source using transmission photocathode
N. Yamamoto, X.G.Jin, A. Mano, T. Ujihara, Y. Takeda, S. Okumi, T. Nakanishi, T. Yasue, T. Koshikawa, T.Oshima, T. Saka and H. Horinaka,
Vol. 298 page： 012017 2011
-
Strain of GaAs/GaAsP superlattices used as spin-polarized electron photocathodes, determined by X-ray diffraction Reviewed
T. Saka, Y. Ishida, M. Kanda, X.G. Jin, Y. Maeda, S. Fuchi, T. Ujihara, Y. Takeda, T. Matsuyama, H. Horinaka, T. Kato, N. Yamamoto, A. Mano, Y. Nakagawa, M. Kuwahara, S. Okumi, T. Nakanishi, M. Yamamoto, T. Ohshima, T. Kohashi, M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa
-Journal of Surface Science and Nanotechnology Vol. 8 page： 125-130 2010
-
Stacking Faults around the hetero-interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth Reviewed
K. Seki, K. Morimoto, T. Ujihara, T. Tokunaga, K. Sasaki, K. Kuroda, and Y. Takeda
Mater. Sci. Forum Vol. 645-648 page： 363-366 2010
-
Real time magnetic imaging by spin-polarized low energy electron microscopy with highly spin-polarized and high brightness electron gun Reviewed
M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa, Y. Nakagawa, T. Konomi, A. Mano, N. Yamamoto, M. Kuwahara, M. Yamamoto, S. Okumi, T. Nakanishi, X.G. Jin, T. Ujihara, Y. Takeda, T. Kohashi, T. Ohshima, T. Saka, T. Kato, and H. Horinaka
Appl. Phys. Express Vol. 3 page： 026601 2010
-
Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices. Reviewed
X.G. Jin, Y. Maeda, T. Sasaki, S. Arai, Y. Ishida, M. Kanda, S. Fuchi, T. Ujihara, T. Saka, and Y. Takeda
J. Appl. Phys. Vol. 108 ( 9 ) page： 094509 - 094509-6 2010
-
TEM analysis of SiC crystal grown on (001) 3C-SiC CVD substrate by solution growth Reviewed
K. Morimoto, R.Tanaka, K. Seki, T. Tokunaga, T. Ujihara, K. Sasaki, Y. Takeda, K. Kuroda
International Journal of Advanced Microscopy and Theoretical Calculations Vol. Letters 2 page： pp 242-243 2010
-
In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy Reviewed
T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta
Appl. Phys. Lett. Vol. 97 ( 4 ) page： 042509 2010
-
High Temperature Solution Growth on Free-standing (001)3C-SiC Epilayers Reviewed
R. Tanaka, K. Seki, T. Ujihara, Y. Takeda
Mater. Sci Forum Vol. 615-617 page： 37-40 2009
-
High Brightness and High Polarization Electron Source Using Transmission Photocathode Reviewed
N. Yamamoto, X. Jin, A. Mano, Y. Nakagawa, T. Nakanishi, T. Ujihara, S. Okumi, M. Yamamoto, T. Konomi, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa
AIP Proceedings Vol. 1149 page： 1052-1056 2009
-
Status of 200keV Beam Operations at Nagoya University Reviewed
M. Yamamoto, T. Konomi, S. Okumi, Y. Nakagawa, N. Yamamoto, M.Tanioku, X. Jin, T. Ujihara, Y. Takeda, F. Fukuta, H. Matsumoto
AIP Proceedings Vol. 1149 page： 987-991 2009
-
Shape transformation of adsorbed vesicles on oxide surfaces: Effect of substrate material and photo-irradiation Reviewed
R. Tero, T. Ujihara and T. Urisu
Trans. Mater. Res. Soc. Jpn. Vol. 34 ( 2 ) page： 183-188 2009
-
Effects of Applied Voltage on the Size of Phase-Separated Domains in DMPS-DOPC Lipid Binary Bilayers Supported on SiO2/Si Substrates Reviewed
Y. Yamauchi, T. Ujihara, R. Tero and Y. Takeda
Trans. Mater. Res. Soc. Jpn. Vol. 34 ( 2 ) page： 217-220 2009
-
Local Condensation of Artificial Raft Domains under Light Irradiation in Supported Lipid Bilayer of PSM-DOPC-Cholesterol System Reviewed
T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero and Y. Takeda
Trans. Mater. Res. Soc. Jpn. Vol. 34 ( 2 ) page： 179-182 2009
-
次世代のＳｉＣ高品質基板結晶作製技術 溶液法によりマイクロパイプ・基底面転位を低減 産学の連携を深め、実用化をめざす
宇治原徹, 竹田美和
Semiconductor FPD World Vol. 11 page： 55-58 2009
-
ＳｉＣ単結晶の溶液成長
宇治原徹
Materials Stage Vol. 9 page： 46-49 2009
-
Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy Reviewed
Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Ryotaro Watanabe, Masao Tabuchi, Toru Ujihara, Koshi Takenaka, Yoshikazu Takeda, and Hiroshi Ikuta
Applied Physics Express Vol. 2 page： 093002 2009
-
Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates Reviewed
T. Saka, T. Kato, X.G. Jin, M. Tanioku, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Matsuyama, T. Yasue, and T. Koshikawa
Phys. Status Solidi Vol. 8 page： 1785 2009
-
*Stability Growth Condition for 3C-SiC Crystals by Solution Technique Reviewed
T. Ujiahra, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, Y. Takeda,
Mater. Sci Forum Vol. 600-603 page： 63-66 2009
-
Low temperature solution growth of 3C-SiC crystals in Si-Ge-Ti solvent Reviewed
R. Tanaka, T. Ujihara, Y. Takeda,
Mater. Sci Forum Vol. 600-603 page： 59-62 2009
-
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method Reviewed
K. Seki, R. Tanaka, T. Ujihara, Y. Takeda,
Mater. Sci Forum Vol. 615-617 page： 27-30 2009
-
Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy Reviewed
Masaki Takihara, Takuji Takahashi, Toru Ujihara
Appl. Phys. Lett. Vol. 95 page： 19 2009
-
High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers Reviewed
N. Yamamoto, Y. Nakanishi, A. Mano, Y. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X. G. Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara
J. Appl. Phys. Vol. 103 page： 64905 2008
-
固体表面物性がサポーティッドメンブレンの形成過程と構造に及ぼす影響 Reviewed
手老龍吾, 宇治原徹, 宇理須恒雄,
表面 HYOMEN(SURFACE) Vol. 46 page： 287-299 2008
-
Minority Carrier Lifetime in Polycrystalline Silicon Solar Cells Studied by Phot-assisted Kelvin Probe Force Microscopy Reviewed
M. Takihara, T. Ujihara, T. Takahashi
Appl. Phys. Lett. Vol. 93 page： 021902 2008
-
Local concentration of gel phase domains in supported lipid bilayers under light irradiation in binary mixture of phospholipids doped with dyes for photoinduced activation Reviewed
T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero, Y. Takeda,
Langmuir Vol. 24 page： 10974-10980 2008
-
Lipid Bilayer Membrane with Atomic Step Structure:Supported Bilayer on Step-and-Terrace TiO2(100) Surface Reviewed
R. Tero, T. Ujihara, T. Urisu,
Langmuir Vol. 24 page： 11567-11576 2008
-
Highly spin-polarized electron photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer Reviewed
X.G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, and T. Koshikawa
J. Crystal Gorwth Vol. 310 page： 5039-5043 2008
-
" 歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係,"
"前多悠也, 金秀光, 谷奥雅俊, 渕真悟, 宇治原徹, 竹田美和, 山本尚人,中川靖英, 山本将博, 奥見正治, 中西彊, 坂貴, 堀中博道, 加藤俊宏, 安江常夫, 越川孝範"
信学技報 Vol. 108 page： 75-84 2008
-
Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy Reviewed
S. Fuchi, S. Miyake, S. Kawamura, W.S. Lee, T. Ujihara, Y. Takeda
J. Crystal Gorwth Vol. 310 page： 2239-2243 2008
-
*Solution growth of high-quality 3C-SiC crystals Reviewed
T. Ujihara, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, and Y. Takeda
J. Crystal Gorwth Vol. 310 page： 1438-1442 2008
-
*Super-high brightness spin-polarized transmission photocathode based on GaAs-GaAsP strained superlattice structure on GaP substrate Reviewed
X.G. Jin, N. Yamamoto,Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi11, T. Saka, H. Horinaka, T. Yasue, and T. Koshikawa
Appl. Phys. Express Vol. 1 page： 45002 2008
-
Supported lipid bilayer membranes on SiO2 and TiO2: substrate effects on membrane formation and shape transformation Reviewed
R. Tero, T. Ujihara, T. Urisu
Proceedings of SPIE Vol. 6769 page： 1-12 2007
-
" Er,O共添加GaAsを有する分離閉じ込め構造による1.5μm帯の電流注入による発光強度の増大,"
宇木大輔, 山口岳宏, 田中雄太, 渕真悟, 宇治原徹, 竹田美和
信学技報 Vol. 107 page： 29-34 2007
-
"歪み補償型GaAs/GaAsP超格子偏極電子源の特性向上,"
加藤鷹紀, 酒井良介, 谷奥雅俊, 中川靖英, 前田義紀, 金秀光, 渕真悟, 山本将博, 宇治原徹, 中西 彊, 竹田美和
信学技報 Vol. 107 page： 109-114 2007
-
生体膜における相分離構造に関する研究
宇治原徹
まてりあ Vol. 46 page： 433 2007
-
Photovoltage mapping on polycrystalline silicon solar cells by Kelvin probe force microscopy with piezoresistive cantilever Reviewed
M. Takihara, T. Igarashi, T. Ujihara and T. Takahashi
Jpn. J. Appl. Phys. Part 1 Vol. 46 page： 5548-5551 2007
-
Thermal emittance measurements for electron beams produced from bulk and superlattice negative electron affinity photocathods Reviewed
N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Sakai, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T. Nakanishi, M. Kuriki, C. Bo, T. Ujihara and Y. Takeda
J. Appl. Phys. Vol. 102 page： 24904 2007
-
"Effect of Li doping on photoluminescence from Er, O-codoped GaAs" Reviewed
D. Uki, H. Ohnishi, T. Yamaguchi, Y. Takemori, A. Koizumi, S. Fuchi, T. Ujihara and Y. Takeda
J. Crystal Growth Vol. 298 page： 69-72 2007
-
Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method Reviewed
"T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda"
Appl. Phys. Lett. Vol. 89 page： 083110 2006
-
Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique Reviewed
K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, and K. Nakajima
Mater. Sci Forum Vol. 527-529 page： 119-122 2006
-
分散量子ドット構造を利用した広帯域発光素子 Reviewed
李祐植, 三宅信輔, 渕真悟, 宇治原徹, 竹田美和
日本結晶成長学会誌 Vol. 33 page： 106-110 2006
-
Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by AFM with Piezo-resistive Cantilever Reviewed
T. Igarashi, T. Ujihara, T. Takahashi
Jpn. J. Appl. Phys. Part 1 Vol. 45 page： 2128-2131 2006
-
"Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution" Reviewed
Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara and Kazuo Nakajima
Mater. Sci Forum Vol. 527-529 page： 115-118 2006
-
Evaluation of Strain Field around SiC Particle in Poly-Crystalline Silicon
"T. Ujihara, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda,"
Proc. IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC4) page： 272 2006
-
GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化
宇治原徹, 陳 博, 安井健一, 酒井良介、山本将博、中西 彊、竹田美和
信学技報 Vol. 106 page： 79-84 2006
-
The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution Reviewed
S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda
page： p. 208-210 2006
-
Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy Reviewed
T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda
J. Crystal Growth Vol. 289 page： 89-95 2006
-
Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study Reviewed
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
Thin Solid Films Vol. 476 page： 206-209 2005
-
Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent Reviewed
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara
J. Appl. Phys. Vol. 98 page： 073708 2005
-
メサ構造ＩｎＰテンプレート基板へのＩｎＡｓ量子ドットの成長とサイズ制御
宇治原 徹, 吉田義浩, 李祐植, 竹田美和
信学技報 Vol. 105 page： 23-26 2005
-
Structural properties of directionally grown polycrystalline SiGe for solar cells Reviewed
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima
J.Cryst.Growth. Vol. 275 page： 467-473 2005
-
Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams Reviewed
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki
International Journal of Material & Product Technology. Vol. 22 page： 185-212 2005
-
"Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate" Reviewed
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
J.Cryst.Growth. Vol. 273 page： 594-602 2005
-
A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal Reviewed
Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima
J.Cryst.Growth Vol. 276 page： 393-400 2005
-
太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性 ―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価― Reviewed
藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄
日本結晶成長学会誌 Vol. 32 page： 291-296 2005
-
Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM
T. Ujihara, K. Nakajima, Y. Takeda
Proc. 15th PVSEC page： 118-119 2005
-
Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Reviewed
K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima
Mater. Sci Forum Vol. 483 page： 13-16 2005
-
Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE Reviewed
Toru Ujihara, Yoshihiro Yoshida, Woo Sik Lee, Ryo Oga, Yoshikazu Takeda
page： p112 2005
-
Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer Reviewed
U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima
J. Cryst. Growth Vol. 275 page： 1203-1207 2005
-
Grain growth behaviors of polycrystalline silicon during melt growth processes Reviewed
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
J. Crystal Growth Vol. 266 page： 441-448 2004
-
Molten metal flux growth and properties of CrSi2 Reviewed
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima
JOURNAL OF ALLOYS AND COMPOUNDS. Vol. 383 page： 319-321 2004
-
Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer Reviewed
"A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki"
Appl. Phys. Lett. Vol. 84 page： 2802-2804 2004
-
In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy Reviewed
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima
J. Crystal Growth Vol. 262 page： 536-542 2004
-
Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate Reviewed
G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima
J. Crystal Growth Vol. 262 page： 196-201 2004
-
Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime Reviewed
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Thin Solid Films Vol. 451-452 page： 604-607 2004
-
In-situ observations of melt growth behavior of polycrystalline silicon Reviewed
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
J. Crystal Growth Vol. 262 page： 124 2004
-
Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations Reviewed
K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido
J. Crystal Growth Vol. 260 page： 372-383 2004
-
On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates Reviewed
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima
Appl. Phys. Lett. Vol. 85 page： 1335-1337 2004
-
Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe Reviewed
N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima
Jpn. J. Appl. Phys. Vol. 43 page： L250-L252 2004
-
Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution Reviewed
W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa
J. Appl. Phys. Vol. 96 (2) page： 1238-1241 2004
-
Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation Reviewed
Y.Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara
Jpn. J. Appl. Phys. Vol. Feb-46 page： L907 2004
-
Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate Reviewed
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Appl. Surf. Sci. Vol. 224 page： 604-607 2004
-
Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy Reviewed
T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
J. Crystal Growth Vol. 266 page： 467-474 2004
-
材料工学からの太陽電池研究
宇治原徹
まてりあ Vol. 43 page： 949-953 2004
-
SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶
中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦
日本結晶成長学会誌 Vol. 31 page： 29-37 2004
-
Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Reviewed
Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima
Mater. Sci Forum Vol. 457-460 page： 633-637 2004
-
Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method Reviewed
Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima
page： ? 2004
-
TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Reviewed
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima
Mater. Sci Forum Vol. 457-460 page： 347-351 2004
-
Solution growth of self standing 6H-SiC single crystal using metal solvent Reviewed
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima
Mater. Sci Forum Vol. 457-460 page： 123-126 2004
-
Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals Reviewed
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima
J. Crystal Growth Vol. 254 page： 188-195 2003
-
High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature Reviewed
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
Jpn. J. Appl. Phys. Vol. 42 page： L217-L219 2003
-
Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix Reviewed
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima
Journal of Applied Physics Vol. 94 page： 916-920 2003
-
Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Reviewed
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Applied Physics Letters Vol. 83 page： 1258-1260 2003
-
Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Jpn. J. Appl. Phys. Vol. 42 page： L232-L234 2003
-
Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Reviewed
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth Vol. 250 page： 298-304 2003
-
Hightemperature solution growth and characterization of chromium disilicide Reviewed
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima
Jpn. J. Appl. Phys. Vol. 42 page： 7292-7293 2003
-
Stacked Ge islands for photovoltaic applications Reviewed
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Sci. Tech. Adv. Mat Vol. 4 page： 367-370 2003
-
What is the most important growth parameter on crystal quality of the silicon layer by LPE method? Reviewed
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
( 2 ) page： 1241 - 1244 2003
-
Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure Reviewed
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima
( 3 ) page： 2746 - 2749 2003
-
Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application Reviewed
N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima
( 1 ) page： 98-101 2003
-
Direct observations of crystal growth from silicon melt Reviewed
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima
( 1 ) page： 110 - 113 2003
-
Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution Reviewed
K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima
( 1 ) page： 158 - 160 2003
-
Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications Reviewed
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido
Sol. Energy Mater. Sol. Cells Vol. 72 page： 93-100 2002
-
New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth Vol. 241 page： 387-394 2002
-
Crystal growth of silicon-germanium homogeneous bulk crystal and related measurement
J. Japanese association for crystal growth Vol. 29 ( 5 ) page： 339 2002
-
Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution Reviewed
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
J. Appl. Phys. Vol. 92 page： 7098-7101 2002
-
Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Non-Cryst. Solids Vol. 312-314 page： 196-202 2002
-
In situ observation of crystal growth behavior from silicon melt Reviewed
K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima
J. Crystal Growth Vol. 243 page： 275-282 2002
-
Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals Reviewed
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido
J. Crystal Growth Vol. 240 page： 370-381 2002
-
Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells Reviewed
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Sol. Energy Mater. Sol. Cells Vol. 73 page： 305-320 2002
-
Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution Reviewed
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
Jpn. J. Appl. Phys. Vol. 41 page： 4462-4465 2002
-
Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima
Mat. Sci. Eng. B Vol. 89 page： 364-367 2002
-
In-situ monitoring system of the position and temperature at the crystal-solution interface Reviewed
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth Vol. 236 page： 364-367 2002
-
*Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth Vol. 242 page： 313-320 2002
-
Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties Reviewed
Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Yoshihiro Murakami, Kuninori Kitahara and Kazuo Nakajima
page： 1339-1342 2002
-
Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution Reviewed
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima, and H. Yaguchi
Jpn. J. Appl. Phys. Vol. 41 page： L37-L39 2002
-
In-situ observation of the Marangoni convection of a NaCl aqueous solutions under microgravity Reviewed
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, N. Usami, and K. Nakajima
J. Crystal Growth Vol. 234 page： 516-522 2002
-
Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique Reviewed
Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima
page： 408-411 2002
-
Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency Reviewed
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
page： 247-249 2002
-
Assessing composition gradient energy effects due to spin interaction on the spinodal decomposition of Fe-Cr Reviewed
T. Ujihara, K. Osamura
Mater. Sci. Eng. A Vol. 312 page： 128 2001
-
Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K.Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa, and S. Kodama
Semicon. Sci. and Technol. Vol. 16 page： 699-703 2001
-
Effects of misfit dislocation and AlN buffer layer on the GaInN/GaN phase diagram of the growth modes Reviewed
K. Nakajima, T. Ujihara, and G. Sazaki
J. Appl. Phys. Vol. 89 page： 146-153 2001
-
Growth of SixGe1-x (x=0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal-Solution Interface Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami, and K.Nakajima
Jpn. J. Appl. Phys. Vol. 44 page： 4141-4144 2001
-
Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in-situ monitoring system Reviewed
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, and K. Nakajima
J. Crystal Growth Vol. 224 page： 204-211 2001
-
Physical model for the evaluation of solid-liquid interfacial tension in silicon Reviewed
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, K. Nakajima
J. Appl. Phys. Vol. 90 page： 750-755 2001
-
Kinetic analysis of spinodal decomposition process in Fe-Cr alloys by small angle neutron scattering Reviewed
T. Ujihara, K. Osamura
Acta Materialia Vol. 48 page： 1629-1637 2000
-
Effects of the dislocation density and surface energy on phase diagrams of the S-K mode for the GaInN/GaN and GaPSb/GaP systems Reviewed
K. Nakajima, T. Ujihara, S. Miyashita, and G. Sazaki
In Mat. Res. Soc. Symp. Proc. Vol. 618 page： 285-290 2000
-
"Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies" Reviewed
K. Nakajima, T. Ujihara, G. Sazaki, and N. Usami
J. Crystal Growth Vol. 220 page： 413-424 2000
-
SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, Y. Yakabe, T. Kondo, S. Koh, B. Zhang, Y. Segawa,Y. Shiraki, S. Kodama, and K. Nakajima
Appl. Phys. Lett. Vol. 77 page： 3565-3567 2000
-
In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry Reviewed
T. Ujihara, G. Sazaki, S. Miyashita, N. Usami, K. Nakajima
Jpn J. Appl. Phys Vol. 39 page： 5981-5982 2000
-
Thickness dependence of stable structure of the Stranski-Krastanov mode in the GaPSb/GaP system Reviewed
K. Nakajima, T. Ujihara, S. Miyashita, G. Sazaki
Journal of Crystal Growth Vol. 209 page： 637-647 2000
-
"The excess free energy due to composition gradient for ferromagnetic alloys""" Reviewed
T. Ujihara, K. Osamura
Acta Materialia Vol. 47 page： 3041-3048 1999
-
Kinetics of Spinodal Decomposition with Composition Dependent Mobility Reviewed
T. Ujihara, K. Osamura
Proceeding of the International Conference on Solid-Solid Phase Transformation Vol. 99 page： 117-120 1999
-
Phase diagrams and stable structures for Sranski-Krastanov mode of III-V ternary quantum dots Reviewed
K. Nakajima, T. Ujihara, S. Miyashita and G. Sazaki
Journal of Korean Association of Crystal Growth Vol. 9 page： 387-395 1999
-
Magnetic damping of the temperature-driven convection in NaCl aqueous solution using a static and homogenous of 10 T Reviewed
G. Sazaki, S. D. Drubin, S. Miyashita, T. Ujihara, K. Nakajima, M. Motokawa
Jpn. J. Appl. Phys. Vol. 38 page： L842-L844 1999
-
Effect of nonlinearity of the evolution equation on the spinodal decomposition process in alloys Reviewed
T. Ujihara, K. Osamura
Physical Review Vol. B58 ( 17 ) page： 11371 1998
-
Shape Anisotropy of GP Zone in Early Decomposition Process of Al-Zn Binary Alloy Reviewed
J. Japan Inst. Metals Vol. 62 ( 2 ) page： 117 1998
-
Effect of Third Elements on Cu Precipitation on Fe-Cu Alloys Reviewed
Toru Ujihara, Kozo Osamura
Ann. Physiq. Vol. C3 ( 20 ) page： 3 1995
-
Phase Decomposition in Fe-Cr-Mo Alloy Reviewed
Kozo Osamura Toru Ujihara, Hiroshi Okuda, Michihiro Furusaka
Proc. Int. Conf. On PTM'94 Solid-Solid Transformation in Inorganic Materials page： ",377" 1994