Faculty Profiles - UJIHARA, Toru

Papers - UJIHARA, Toru

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Modeling and analysis of undoped GaN grown in a horizontal laminar flow MOCVD reactor Reviewed

Takahiro Gotow, Tsutomu Sonoda, Tokio Takahashi, Hisashi Yamada, Toshihide Ide, Reiko Azumi, Mitsuaki Shimizu, Yosuke Tsunooka, Shota Seki, Kentaro Kutsukake, and Toru Ujihara

Materials Science in Semiconductor Processing Vol. 188 page： 109258 2025.3

The effects of polyethylene glycol on the nucleation and growth of DNA-functionalized gold nanoparticles crystals Reviewed

Kojima, S; Zhang, LD; Kumar, C; Sumi, H; Ohta, N; Sekiguchi, H; Tsuzuki, K; Harada, S; Ujihara, T; Tsukamoto, K; Tagawa, M

Journal of Crystal Growth Vol. 640 2024.8

Modulated crystallographic shear structure in titanium–chromium oxides: their structure and phonon-transport properties Reviewed

S. Harada, T. Hattori, M. Inden, S. Sugimoto, M. Ito, M. Tagawa and T. Ujihara

Journal of Applied Crystallography Vol. 57 ( 4 ) page： 1212 - 1216 2024.8

Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth Reviewed

Yuki Nakanishi, Kentaro Kutsukake, Yifan Dang, Shunta Harada, Miho Tagawa, Toru Ujihara

Journal of Crystal Growth Vol. 631 2024.4

Effect of Solution Components on Solvent Inclusion in SiC Solution Growth Reviewed

Huiqin Zhou, Hitoshi Miura, Yuma Fukami, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

Crystal Growth & Design Vol. 24 ( 4 ) page： 1806 - 1817 2024.2

Machine Learning for Semiconductor Process Simulation Described by Coupled Partial Differential Equations Reviewed

Sato, R ; Kutsukake, K ; Harada, S ; Tagawa, M ; Ujihara

ADVANCED THEORY AND SIMULATIONS 2023.7

Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions Reviewed

Zhou, HQ (Zhou, Huiqin); Miura, H (Miura, Hitoshi); Dang, YF (Dang, Yifan); Fukami, Y (Fukami, Yuma); Takemoto, H (Takemoto, Hisaki); Harada, S (Harada, Shunta); Tagawa, M (Tagawa, Miho); Ujihara, T (Ujihara, Toru)

CRYSTAL GROWTH & DESIGN Vol. 23 ( 5 ) page： 3393 - 3401 2023.5

Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC Reviewed

Dang, Yifa , Liu, Xinbo,Zhu, Can, Fukami, Yuma,Ma, Shuyang , Zhou, Huiqin ,Liu, Xin ,Kutsukake, Kentaro, Harada, Shunta , Ujihara, Toru

CRYSTAL GROWTH & DESIGN page： 1023 - 1032 2023.2

Thermal conduction in titanium-chromium oxide natural superlattices with an ordered arrangement of nearly pristine interfaces Reviewed

Shunya Sugimoto, Gareoung Kim, Tsunehiro Takeuchi, Miho Tagawa, Toru Ujihara, Shunta Harada

Journal of Alloys and Compounds Vol. 934 2023.2

非弾性Ｘ線散乱によるルチル型酸化チタンのフォノン分散測定 Reviewed

原田俊太, 小坂直輝, 筒井智嗣, 田中克志, 田川美穂, 宇治原徹

SPring-8/SACLA利用研究成果集 Vol. 10 ( 6 ) page： 521 - 523 2022.12

Bayesian Optimization for Cascade-Type Multistage Processes Reviewed

Kusakawa, S,Takeno, S , Inatsu, Y, Kutsukake, K, Iwazaki, S,Nakano, T , Ujihara, T,Karasuyama, M ,Takeuchi, I

NEURAL COMPUTATION Vol. 34 ( 12 ) page： 2408 - 2431 2022.11

Thermal conduction in titanium-chromium oxide natural superlattices with an ordered arrangement of nearly pristine interfaces Reviewed

Shunya Sugimoto, Gareoung Kim, Tsunehiro Takeuchi, Miho Tagawa, Toru Ujihara, Shunta Harada

SSRN 2022.10

Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC Reviewed

Masaru Isono,Shunta Harada,Kentaro Kutsukake,Tomoo Yokoyama,Miho Tagawa,Toru Ujihara

ADVANCED THEORY AND SIMULATIONS Vol. 5 ( 9 ) 2022.7

A Transfer Learning-Based Method for Facilitating the Prediction of Unsteady Crystal Growth Reviewed

Yifan Dang,Kentaro Kutsukake,Xin Liu,Yoshiki Inoue,Xinbo Liu,Shota Seki,Can Zhu,Shunta Harada,Miho Tagawa,Toru Ujihara

ADVANCED THEORY AND SIMULATIONS Vol. 5 ( 9 ) 2022.7

Designing a High-Crystallinity Nano-Gapped Particle Superlattice via DNA-Guided Colloidal Crystallization and Dehydration Reviewed

Hayato Sumi, Noboru Ohta, Hiroshi Sekiguchi, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto, and Miho Tagawa

Crystal Growth＆Design Vol. 22 ( 6 ) page： 3708 - 3718 2022.4

Nucleation sites of expanded stacking faults detected by in operando x-ray topography analysis to design epitaxial layers for bipolar-degradation-free SiC MOSFETs Reviewed

Kumiko Konishi, Ryusei Fujita, Keisuke Kobayashi, Akio Yoneyama, Kotaro Ishiji, Hiroyuki Okino, Akio Shima, Toru Ujihara

AIP Advances 12 2022.3

Crossover from incoherent to coherent thermal conduction in bulk titanium oxide natural superlattices

Harada Shunta, Kosaka Naoki, Yagi Takashi, Sugimoto Shunya, Tagawa Miho, Ujihara Toru

SCRIPTA MATERIALIA Vol. 208 2022.2

Numerical investigation of solute evaporation in crystal growth from solution: A case study of SiC growth by TSSG method

Yifan Dang, Can Zhu, Xin Liu, Wancheng Yu, Xinbo Liu, Koki Suzuki, Tomoaki Furusho, Shunta Harada, Miho Tagawa, Toru Ujihara

Journal of Crystal Growth 2022.2

Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification Reviewed

Xin Liu, Yifan Dang, Hiroyuki Tanaka, Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Toru Ujihara, Noritaka Usami

ACS OMEGA Vol. 7 ( 8 ) page： 6665 - 6673 2022.2

Solvent design aiming at solution property induced surface stability: A case study using SiC solution growth

Liu Xinbo, Dang Yifan, Suzuki Koki, Zhu Can, Yu Wancheng, Harada Shunta, Tagawa Miho, Ujihara Toru

JOURNAL OF CRYSTAL GROWTH Vol. 578 2022.1

High fracture toughness AlN achieved by addition of AlN whiskers and tape-casting

Shimizu Hiroki, Kondo Naoki, Shimamura Akihiro, Hotta Mikinori, Harada Shunta, Ujihara Toru, Ohnishi Yoshihiro

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN Vol. 130 ( 1 ) page： 195 - 198 2022.1

Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography

Fujie Fumihiro, Harada Shunta, Suo Hiromasa, Raghothamachar Balaji, Dudley Michael, Hanada Kenji, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru

MATERIALIA Vol. 20 2021.12

Bayesian Optimization for Cascade-type Multi-stage Processes Reviewed

Shunya Kusakawa, Shion Takeno, Yu Inatsu, Kentaro Kutsukake, Shogo Iwazaki, Takashi Nakano, Toru Ujihara, Masayuki Karasuyama, Ichiro Takeuchi

arXiv:2111 2021.11

In-operando x-ray topography analysis of SiC metal-oxide-semiconductor field-effect transistors to visualize stacking fault expansion motions dynamically during operations Reviewed

Konishi Kumiko, Fujita Ryusei, Kobayashi Keisuke, Yoneyama Akio, Ishiji Kotaro, Okino Hiroyuki, Shima Akio, Ujihara Toru

JOURNAL OF APPLIED PHYSICS Vol. 130 ( 14 ) 2021.10

Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals Reviewed

Ailihumaer Tuerxun, Peng Hongyu, Fujie Fumihiro, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Ujihara Toru

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS Vol. 271 2021.9

Two-Step Nanoparticle Crystallization via DNA-Guided Self-Assembly and the Nonequilibrium Dehydration Process

Sumi Hayato, Ohta Noboru, Sekiguchi Hiroshi, Harada Shunta, Ujihara Toru, Tsukamoto Katsuo, Tagawa Miho

CRYSTAL GROWTH & DESIGN Vol. 21 ( 8 ) page： 4506 - 4515 2021.8

Y Local Atomic Structures for Tunable Ordered Arrangements of Crystallographic Shear Planes in Titanium-Chromium Oxide Natural Superlattices Reviewed

Harada Shunta, Sugimoto Shunya, Kosaka Naoki, Tagawa Miho, Ujihara Toru

JOURNAL OF PHYSICAL CHEMISTRY C Vol. 125 ( 28 ) page： 15730 - 15736 2021.7

Control of microstructure and mechanical properties of sintered aluminum nitride through addition of aluminum nitride whiskers Reviewed

Kondo Naoki, Shimamura Akihiro, Hotta Mikinori, Shimizu Hiroki, Ujihara Toru, Ohnishi Yoshihiro

JOURNAL OF ASIAN CERAMIC SOCIETIES Vol. 9 ( 3 ) page： 1248 - 1254 2021.7

Ordered Arrangement of Planar Faults with Picoscale Perfection in Titanium Oxide Natural Superlattices Reviewed

Harada Shunta, Kosaka Naoki, Tagawa Miho, Ujihara Toru

JOURNAL OF PHYSICAL CHEMISTRY C Vol. 125 ( 20 ) page： 11175 - 11181 2021.5

Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC Reviewed

Fujie Fumihiro, Peng Hongyu, Ailihumaer Tuerxun, Raghothamachar Balaji, Dudley Michael, Harada Shunta, Tagawa Miho, Ujihara Toru

ACTA MATERIALIA Vol. 208 2021.4

Geometrical design of a crystal growth system guided by a machine learning algorithm Reviewed

Yu Wancheng, Zhu Can, Tsunooka Yosuke, Huang Wei, Dang Yifan, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTENGCOMM Vol. 23 ( 14 ) page： 2695 - 2702 2021.4

Intensity Interference in a Coherent Spin-Polarized Electron Beam

Kuwahara Makoto, Yoshida Yuya, Nagata Wataru, Nakakura Kojiro, Furui Masato, Ishida Takafumi, Saitoh Koh, Ujihara Toru, Tanaka Nobuo

PHYSICAL REVIEW LETTERS Vol. 126 ( 12 ) 2021.3

Chiral Optical Force Generated by a Superchiral Near-Field of a Plasmonic Triangle Trimer as Origin of Giant Bias in Chiral Nucleation: A Simulation Study Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Cheng An-Chieh, Tagawa Miho, Ujihara Toru, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi

JOURNAL OF PHYSICAL CHEMISTRY C Vol. 125 ( 11 ) page： 6209 - 6221 2021.3

Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth

Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTENGCOMM Vol. 23 ( 9 ) page： 1982 - 1990 2021.3

Detection and classification of dislocations in GaN by optical microscope using birefringence

Atsushi Tanaka, Shunta Harada, Kenji Hanada, Yoshio Honda, Toru Ujihara, and Hiroshi Amano,

Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV ( 117060Y ) 2021.3

Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy

Kokubo Nobuhiko, Tsunooka Yosuke, Inotsume Sho, Fujie Fumihiro, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SA ) 2021.1

Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth Reviewed

Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru

CrystEngComm Vol. 23 ( (8) ) 2021.1

Geometrical design of a crystal growth system guided by a machine learning algorithm Reviewed

Wancheng Yu, Can Zhu, Yosuke Tsunooka, Wei Huang, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara

CrystEngComm 2021

Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal Reviewed

Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

Vol. 16 ( 1 ) 2021

Adaptive Bayesian optimization for epitaxial growth of Si thin films under various constraints Reviewed

Osada Keiichi, Kutsukake Kentaro, Yamamoto Jun, Yamashita Shigeo, Kodera Takashi, Nagai Yuta, Horikawa Tomoyuki, Matsui Kota, Takeuchi Ichiro, Ujihara Toru

Vol. 25 2020.12

Optimal Control of SiC Crystal Growth in the RF-TSSG System Using Reinforcement Learning Reviewed

Wang Lei, Sekimoto Atsushi, Takehara Yuto, Okano Yasunori, Ujihara Toru, Dost Sadik

Vol. 10 ( 9 ) 2020.9

Plasmonic Manipulation of Sodium Chlorate Chiral Crystallization: Directed Chirality Transfer via Contact-Induced Polymorphic Transformation and Formation of Liquid Precursor Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Ujihara Toru, Omatsu Takashige, Miyamoto Katsuhiko, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi

CRYSTAL GROWTH & DESIGN Vol. 20 ( 8 ) page： 5493 - 5507 2020.8

Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography Reviewed

Fujie Fumihiro, Harada Shunta, Hanada Kenji, Suo Hiromasa, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru

ACTA MATERIALIA Vol. 194 page： 387 - 393 2020.8

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer Reviewed

Inotsume Sho, Kokubo Nobuhiko, Yamada Hisashi, Onda Shoichi, Kojima Jun, Ohara Junji, Harada Shunta, Tagawa Miho, Ujihara Toru

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method Reviewed

Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4

Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes Reviewed

Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru

ACS APPLIED MATERIALS & INTERFACES Vol. 12 ( 8 ) page： 9341 - 9346 2020.2

Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation Reviewed

Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH Vol. 532 2020.2

Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field

Wang Lei, Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

CRYSTALS Vol. 10 ( 2 ) 2020.2

Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3 Reviewed

Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mitsuaki Shimizu

Phys. Status Solidi B Vol. 257 ( 2 ) page： 1900318 2020

Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal Reviewed

Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTENGCOMM Vol. 21 ( 47 ) page： 7260 - 7265 2019.12

Semi in-situ measurement of zincate ion concentration near zinc anode using background-oriented Schlieren technique Reviewed

Ito Yasumasa, Liang Xiao, Ishikawa Kohei, Ujihara Toru, Sakai Yasuhiko, Iwano Koji

Vol. 1 ( 3 ) 2019.12

Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method Reviewed

Wang L., Horiuchi T., Sekimoto A., Okano Y., Ujihara T., Dost S.

JOURNAL OF CRYSTAL GROWTH Vol. 520 page： 72 - 81 2019.8

Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process Reviewed

Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH Vol. 517 page： 59 - 63 2019.7

In Situ Microscopic Observation on Surface Kinetics in Optical Trapping-Induced Crystal Growth: Step Formation, Wetting Transition, and Nonclassical Growth Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Ujihara Toru, Guo Suxia, Nozawa Jun, Okada Junpei, Omatsu Takashige, Uda Satoshi

CRYSTAL GROWTH & DESIGN Vol. 19 ( 7 ) page： 4138 - 4150 2019.7

Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4HSiC Wafer Fabricated by the Solution Growth Method Reviewed

Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Toru Ujihara

Mater. Sci. Forum Vol. 963 page： 80-84 2019.7

Nondestructive visualization of threading dislocations in GaN by micro raman mapping Reviewed

Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6

The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide

Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Yamamoto Takuya, Ujihara Toru, Dost Sadik

CRYSTAL RESEARCH AND TECHNOLOGY Vol. 54 ( 5 ) 2019.5

Plasmonic Trapping-Induced Crystallization of Acetaminophen Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Uda Satoshi, Tagawa Miho, Ujihara Toni, Miyamoto Katsuhiko, Omatsu Takashige

CRYSTAL GROWTH & DESIGN Vol. 19 ( 2 ) page： 529-537 2019.2

機械学習を用いた結晶成長予測モデルの構築とその応用

宇治原徹, 角岡洋介, 畑佐豪記, 沓掛健太朗, 石黒祥生, 村山健太, 鳴海大翔, 原田俊太, 田川美穂

表面と真空 Vol. 62 ( 3 ) page： 136-140 2019

少量添加で樹脂素材の熱伝導率を向上させるAlNウィスカーフィラーの開発

宇治原徹

エレクトロニクス実装学会誌 Vol. 22 ( 3 ) page： 195-198 2019

結晶成長学的見地による金属負極の析出形態と結晶方位の相関解明

石川晃平, 三橋貴仁, 伊藤靖仁, 竹内幸久, 原田俊太, 田川美穂, 宇治原徹

日本結晶成長学会誌 Vol. 46 ( 1 ) page： 136-140 2019

Numerical investigation of the effect of static magnetic field on the TSSG growth of SiC Reviewed

Wang Lei, Horiuchi Takashi, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH Vol. 498 page： 140 - 147 2018.9

In Situ Observation of Chiral Symmetry Breaking in NaClO3 Chiral Crystallization Realized by Thermoplasmonic Micro-Stirring Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Harada Shunta, Ujihara Tom, Uda Satoshi, Miyamoto Katsuhiko, Omatsu Takashige

CRYSTAL GROWTH & DESIGN Vol. 18 ( 8 ) page： 4230 - 4239 2018.8

Development of angle-resolved spectroscopy system of electrons emitted from a surface with negative electron affinity state Reviewed

Ichihashi Fumiaki, Dong Xinyu, Inoue Akito, Kawaguchi Takahiko, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

REVIEW OF SCIENTIFIC INSTRUMENTS Vol. 89 ( 7 ) 2018.7

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Hara Kazukuni, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru

APPLIED PHYSICS EXPRESS Vol. 11 ( 6 ) 2018.6

Dislocation Behavior in Bulk Crystals Grown by TSSG Method Reviewed

K. Seki, K. Kusunoki, Y. Kishida, H. Kaido, K. Moriguchi, M. Kado, H. Daikoku, T. Shirai, M. Akita, A. Seki, H. Saito, S. Harada, T. Ujihara

Mater. Sci. Forum Vol. 924 page： 39-42 2018

Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method Reviewed

K. Murayama, S. Harada, F. Fujie, X. Liu, R. Murai, C. Zhu, K. Hanada, M. Tagawa, T. Ujihara

Mater. Sci. Forum Vol. 924 page： 60-63 2018

Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation Reviewed

F. Fujie, S. Harada, H. Koizumi, K. Murayama, K. Hanada, M. Tagawa, T. Ujihara

Appl. Phys. Lett Vol. 113 page： 012101 2018

Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

N. Kokubo, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M.Shimizu, S. Harada, M. Tagawa, T. Ujihara

Appl. Phys. Express Vol. 11 page： 111001 2018

Improvement mechanism of sputtered AlN films by high-temperature annealing Reviewed

S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara

J. Cryst. Growth Vol. 502 page： 41-44 2018

High-speed prediction of computational fluid dynamics simulation in crystal growth Reviewed

Y. Tsunooka, N. Kokubo, G. Hatasa, S. Harada, M. Tagawa, T. Ujihara

CrystEngComm Vol. 20 page： 6546 - 6550 2018

Importance of Hydration State around Proteins Required to Grow High-Quality Protein Crystals Reviewed

H. Koizumi, S. Uda, K. Tsukamoto, K. Kojima, M. Tachibana, T. Ujihara

Cryst. Growth Des Vol. 18 page： 4749-4755 2018

Coherent pulse beam in spin-polarized TEM using an NEA photocathode Reviewed

Kuwahara M., Ujihara T., Saitoh K., Tanaka N.

2018 31ST INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) page： . 2018

Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photoemission measurements

Ichihashi Fumiaki, Kawaguchi Takahiko, Dong Xinyu, Kuwahara Makoto, Ito Takahiro, Harada Shunta, Tagawa Miho, Ujihara Toru

AIP ADVANCES Vol. 7 ( 11 ) 2017.11

Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method Reviewed

Yamamoto Takuya, Adkar Nikhil, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH Vol. 474 page： 50-54 2017.9

Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation Reviewed

Yamamoto Takuya, Okano Yasunori, Ujihara Toru, Dost Sadik

JOURNAL OF CRYSTAL GROWTH Vol. 470 page： 75-88 2017.7

Morphology of AlN whiskers grown by reacting N-2 gas and Al vapor

Matsumoto M., Saitou H., Takeuchi Y., Harada S., Tagawa M., Ujihara T.

JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 576-580 2017.6

Two-step SiC solution growth for dislocation reduction

Murayama K., Hori T., Harada S., Xiao S., Tagawa M., Ujihara T.

JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 874-878 2017.6

Phase transition process in DDAB supported lipid bilayer Reviewed

Isogai Takumi, Nakada Sakiko, Yoshida Naoya, Sumi Hayato, Tero Ryugo, Harada Shunta, Ujihara Toru, Tagawa Miho

JOURNAL OF CRYSTAL GROWTH Vol. 468 page： 88-92 2017.6

SiC solution growth on Si face with extremely low density of threading screw dislocations for suppression of polytype transformation Reviewed

K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

Mater. Sci. Forum Vol. 897 page： 24-27 2017.5

Solvent design for high-purity SiC solution growth Reviewed

S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara

Mater. Sci. Forum Vol. 897 page： 32-35 2017.5

Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth Reviewed

T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara

Mater. Sci. Forum Vol. 897 page： 28-31 2017.5

Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors Reviewed

Ishikawa Kohei, Ito Yasumasa, Harada Shunta, Tagawa Miho, Ujihara Toru

CRYSTAL GROWTH & DESIGN Vol. 17 ( 5 ) page： 2379-2385 2017.5

Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaCIO3 Unsaturated Mother Solution Reviewed

Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Maruyama Mihoko, Ujihara Toru, Omatsu Takashige, Mori Yusuke

CRYSTAL GROWTH & DESIGN Vol. 17 ( 2 ) page： 809-818 2017.2

Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents Reviewed

Komatsu Naoyoshi, Mitani Takeshi, Hayashi Yuichiro, Kato Tomohisa, Harada Shunta, Ujihara Toru, Okumura Hajime

JOURNAL OF CRYSTAL GROWTH Vol. 458 page： 37-43 2017.1

Phase transition process in DDAB supported lipid bilayer

"T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa"

J. Cryst. Growth Vol. 468 page： 88-92 2017

Septin Interferes with the Temperature-Dependent Domain Formation and Disappearance of Lipid Bilayer Membranes Reviewed

S. Yamada, T. Isogai, R. Tero, Y. Tanaka-Takiguchi, T. Ujihara, M. Kinoshita, K. Takiguchi

Langmuir page： 12823–12832 2016.11

Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth Reviewed

S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara

Cryst. Growth Des. page： 6436–6439 2016.10

Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles Reviewed

H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara

CrystEngComm Vol. 18 ( 39 ) page： 7441-7448 2016.7

Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis

"S. Xiao, S. Harada, K. Murayama, T. Ujihara"

Cryst. Growth Des. Vol. 16 ( 9 ) page： 5136-5140 2016.7

Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer Reviewed

T. Isogai, E. Akada, S. Nakada, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa

Japanese Journal of Applied Physics Vol. 55 ( 3S2 ) page： 03DF11 2016.3

The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode Reviewed

Makoto Kuwahara, Yoshito Nambo, Kota Aoki, Kensuke Sameshima, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Koh Saitoh, Yoshikazu Takeda and Nobuo Tanaka

Appl. Phys. Lett. Vol. 109 page： 013108 2016

Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method Reviewed

Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara

Mater. Sci. Forum, Vol. 858 page： 57-60 2016

High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent Reviewed

S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara

Mater. Sci. Forum, Vol. 858 page： 1210-1213 2016

Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC Reviewed

T. Umezaki, D. Koike, S. Harada, T. Ujihara

Japanese Journal of Applied Physics Vol. 55 ( 12 ) page： 125601 2016

Two-step SiC solution growth for dislocation reduction

"K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"

J. Cryst. Growth 2016

Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor Reviewed

M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara

J. Cryst. Growth 2016

Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution Reviewed

H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T.Omatsu, Y. Mori

Cryst. Growth Des. 2016

Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles Reviewed

H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, S. Harada, T. Ujihara

CrystEngComm Vol. 18 page： 7441-7448 2016

Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents Reviewed

A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

Jpn. J. Appl. Phys Vol. 55 page： 01AC01 2016

Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth Reviewed

Shiyu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai and Toru Ujihara

Materials Science Forum Vol. 821-823 page： 39-42 2015

Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds Reviewed

Tomonori Umezaki, Daiki Koike, Shunta Harada and Toru Ujihara

Materials Science Forum Vol. 821-823 page： 31-34 2015

Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC Reviewed

Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige and Hajime Okumura

Materials Science Forum Vol. 821-823 page： 35-38 2015

4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions Reviewed

Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, and Hajime Okumura

Mater. Sci. Forum, Vol. 821-823 page： 9-13 2015

Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent Reviewed

Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, and Hajime Okumura

Materials Science Forum Vol. 821-823 page： 14-17 2015

3C-SiC Crystal on Sapphire by Solution Growth Method Reviewed

Kenji Shibata, Shunta Harada and Toru Ujihara

Materials Science Forum Vol. 821-823 page： 185-188 2015

バルク結晶成長のこの10年

宇治原徹, 島村清史, 宇佐美徳隆, 太子敏則, 樋口幹雄, 吉村政志

JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTAL GROWTH(日本結晶成長学会誌) Vol. 42 ( 1 ) page： pp.64-68 2015

Non-uniform electrodeposition of zinc on the (0001) plane Reviewed

T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara

Thin Solid Films Vol. 590 page： pp. 207-213 2015

Dislocation Conversion during SiC Solution Growth for High-quality Crystals Reviewed

S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara

Vol. 821-823 page： pp. 3-8 2015

Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal Reviewed

D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara

Vol. 821-823 page： pp. 18-21 2015

"Effect of forced convection by crucible design in solution growth of SiC single crystal" Reviewed

K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura

Vol. 821-823 page： pp. 22-25 2015

Effect of aluminum addition on the surface step morphology of 4H SiC grown from Si-Cr-C solution

T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura

J. Cryst. Growth Vol. 423 page： 45-49 2015

"Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers" Reviewed

Takumi Isogai, Agnes Piednoir, Eri Akada, Yuki Akahoshi, Ryugo Tero, Shunta Harada, Toru Ujihara, Miho Tagawa

Journal of Crystal Growth Vol. 401 page： 494-498 2014.9

"Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions" Reviewed

Takeshi Mitani, Naoyoshi Komatsu, Tetsuo Takahashi, Tomohisa Kato, Kuniharu Fujii, Toru Ujihara, Yuji Matsumoto, Kazuhisa Kurashige, Hajime Okumura

Journal of Crystal Growth Vol. 401 page： 681-685 2014.9

"Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique" Reviewed

Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

Journal of Crystal Growth Vol. 395 page： 68-73 2014.6

"Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth" Reviewed

Hiromasa Niinomi, Hitoshi Miura, Yuki Kimura, Makio Uwaha, Hiroyasu Katsuno, Shunta Harada, Toru Ujihara, Katsuo Tsukamoto

Crystal Growth and Design Vol. 14 ( 7 ) page： 3596-3602 2014.6

"Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth" Reviewed

Hiromasa Niinomi, Atsushi Horio, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Katsuo Tsukamoto

Journal of Crystal Growth Vol. 394 page： 106-111 2014.5

"Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method" Reviewed

Yuji Yamamoto, Shunta Harada, Kazuaki Seki, Atsushi Horio, Takato Mitsuhashi, Daiki Koike, Miho Tagawa, and Toru Ujihara

Applied Physics Express Vol. 7 page： 065501 2014.5

"Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent" Reviewed

Kazuhiko Kusunoki, Kazuhito Kamei, Kazuaki Seki, Shunta Harada, Toru Ujihara

Journal of Crystal Growth Vol. 392 page： 60-65 2014.4

"The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy" Reviewed

T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda, and H. Ikuta

Superconductor Science and Technology Vol. 27 page： 065005 (6pp) 2014.4

"Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents" Reviewed

Kazuhiko Kusunoki, Kazuhito Kamei, Nobuhiro Okada, Koji Moriguchi, Hiroshi Kaido, Hironori Daikoku, Motohisa Kado, Katsunori Danno, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

Materials Science Forum Vol. 778-780 page： Pages 79-82 2014.2

"Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC" Reviewed

Tomonori Umezaki, Daiki Koike, Atsushi Horio, Shunta Harada, Toru Ujihara

Materials Science Forum Vol. 778-780 page： 63-66 2014.2

"Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent" Reviewed

Shunta Harada, Yuji Yamamoto, Shi Yu Xiao, Miho Tagawa, Toru Ujihara

Materials Science Forum Vol. 778-780 page： 67-70 2014.2

"Growth of a smooth CaF2 layer on NdFeAsO thin film" Reviewed

N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada and H. Ikuta

Journal of Physics: Conference Series Vol. 507 ( 1 ) page： 012047 2014

"Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope" Reviewed

Makoto Kuwahara, Soichiro Kusunoki, Yoshito Nambo, Koh Saitoh, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Yoshikazu Takeda and Nobuo Tanaka

Appl. Phys. Lett. Vol. 105 ( 193101 ) 2014

Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy

F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th page： 2882-2885 2014

"Critical current density and grain boundary property of BaFe2(As,P)2 thin films" Reviewed

A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta

Physica C: Superconductivity,Proceedings of the 25th International Symposium on Superconductivity (ISS 2012) Advances in Superconductivity XXV Vol. 494 page： 181–184 2013.11

Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM Reviewed

Makoto Kuwahara,Yoshito Nambo, Soichiro Kusunoki, Xiuguang Jin, Koh Saitoh, Hidefumi Asano, Toru Ujihara, Yoshikazu Takeda, Tsutomu Nakanishi and Nobuo Tanaka

Microscopy Advance Access page： pp.1-8 2013.6

"Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals" Reviewed

Can Zhu, Shunta Harada, Kazuaki Seki, Huayu Zhang, Hiromasa Niinomi, Miho Tagawa, and Toru Ujihara

Cryst. Growth Des. Vol. 13 ( (8) ) page： 3691-3696 2013.6

"Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth" Reviewed

Materials Science Forum Vol. 740-742 page： pp.15-18 2013.1

"Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC" Reviewed

Materials Science Forum Vol. 740-742 page： 189-192 2013.1

"Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method" Reviewed

Materials Science Forum Vol. 740-742 page： pp.311-314 2013.1

Direct Growth of AlN Single Crystal on Sapphire by Solution Growth Method Reviewed

H. Matsubara, K. Mizuno, Y. Takeuchi, S. Harada, Y. Kitou, E. Okuno, and T. Ujihara,

Vol. 52 page： 08JE17 (4 pages). 2013

"Evolution of threading screw dislocation conversion during solution growth of 4H-SiC" Reviewed

S. Harada, Y. Yamamoto, K. Seki, A. Horio, T. Mitsuhashi, M. Tagawa, and T. Ujihara

APL Mater. Vol. 1 ( 2 ) page： 022109 (7 pages) 2013

超高品質SiC溶液成長 Reviewed

宇治原徹,　原田俊太,　山本祐治, 関和明

応用物理 Vol. 82 ( 4 ) page： 326-329 2013

SiC 結晶成長における多形制御～速度論的多形制御法の提案（3C-SiC 溶液成長を例に）～ Reviewed

関和明、原田俊太、宇治原　徹

日本結晶成長学会誌 Vol. 40 ( 4 ) page： 253-260 2013

SiC溶液成長の最近の展開 Reviewed

原田俊太、山本祐治、関和明、宇治原徹

日本結晶成長学会誌 Vol. 40 page： 25-32 2013

"Achiral Metastable Crystals of Sodium Chlorate Forming Prior to Chiral Crystals in Solution Growth" Reviewed

Hiromasa Niinomi, Tomoya Yamazaki, Shunta Harada, Toru Ujihara, Hitoshi Miura, Yuki Kimura, Takahiro Kuribayashi, Makio Uwaha, and Katsuo Tsukamoto

Cryst. Growth Des. Vol. 13 ( 12 ) page： pp.5188-5192 2013

“Polytype-selective growth of SiC by supersaturation control in solution growth Original Research Article” Reviewed

Journal of Crystal Growth Vol. 360 page： 176-180. 2012.12

Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation Reviewed

Xiuguang Jin, Hirotaka Nakahara, Koh Saitoh, Takashi Saka, Toru Ujihara, Nobuo Tanaka, Yoshikazu Takeda

Journal of Crystal Growth Vol. 353 ( 1 ) page： 84-87 2012.8

Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth Reviewed

Toru Ujihara, Shigeta Kozawa, Kazuaki Seki, Alexander, Yuji Yamamoto, Shunta Harada

Materials Science Forum Vol. 717–720 page： 351-354 2012.5

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Reviewed

Yuji Yamamoto, Kazuaki Seki, Shigeta Kozawa, Alexander, Shunta Harada, Toru Ujihara

Materials Science Forum Vol. 717–720 page： 53-56 2012.5

Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films Reviewed

Hiroki Uemura, Takahiko Kawaguchi, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda, Hiroshi Ikuta

Solid State Communications Vol. 152 ( 8 ) page： 735-739 2012.4

Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth Reviewed

Shunta Harada, Alexander, Kazuaki Seki, Yuji Yamamoto, Can Zhu, Yuta Yamamoto, Shigeo Arai, Jun Yamasaki, Nobuo Tanaka, and Toru Ujihara

Crystal Growth & Design Vol. 12 ( (6) ) page： 3209-3214 2012

30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode Reviewed

M. Kuwahara, S. Kusunoki, X. G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, and N. Tanaka

Appl. Phys. Lett. Vol. 101 page： 033102 2012

“Development of Spin-Polarized and Pulsed TEM “ Reviewed

Vol. 371 page： 012004 2012

“High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth” Reviewed

Vol. 5 page： 115501 (3 pages). 2012

Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si-Sc-C system Reviewed

Kazuaki Seki, Alexander, Shigeta Kozawa, Toru Ujihara, Patrick Chaudouët, Didier Chaussende, Yoshikazu Takeda

Journal of Crystal Growth Vol. 335 ( 1 ) page： 94-99 2011.11

Anomalous Diffusion in Supported Lipid Bilayers Induced by Oxide Surface Nanostructures Reviewed

Ryugo Tero, Gen Sazaki, Toru Ujihara, and Tsuneo Urisu

Vol. 27 page： 9662-9665 2011

Development of spin-polarized transmission electron microscope Reviewed

M. Kuwahara, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi and N Tanaka

Vol. 298 page： 012016 2011

Polytype stability of 4H-SiC seed crystal on solution growth Reviewed

Alexander, K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara and Y. Takeda

Materials Science Forum Vol. 679-680 page： pp 24-27 2011

Defect evaluation of SiC crystal grown by solution method: the study by synchrotron X-ray topography and etching method Reviewed

S. Kozawa, K. Seki, Alexander, Y. Yamamoto, T. Ujihara and Y. Takeda

Materials Science Forum Vol. 679-680 page： pp 28-31 2011

Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness. Reviewed

Kazuma Tani, Shingo Fuchi, Ryota Mizutani, Toru Ujihara, Yoshikazu Takeda

Journal of Crystal Growth Vol. 318 page： pp 1113-1116 2011

High-quality and large-area 3C-SiC growth on 6H-SiC(0 0 0 1) seed crystal with top-seeded solution method. Reviewed

Toru Ujihara, Kazuaki Seki, Ryo Tanaka, Shigeta Kozawa, Alexander, Kai Morimoto, Katsuhiro Sasaki, Yoshikazu Takeda

Journal of Crystal Growth Vol. 318 page： pp 389-393. 2011

Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method Reviewed

Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Masao Tabuchi, Toru Ujihara, Yoshikazu Takeda and Hiroshi Ikuta

Appl. Phys. Express Vol. 4 page： 083102 (3 pages) 2011

Epitaxial growth of LaFeAs(O,F) thin films by molecular beam epitaxy Reviewed

T. Kawaguchi , H. Uemura , T. Ohno , M. Tabuchi , T. Ujihara , K. Takenaka , Y. Takeda , H. Ikuta

Physica C: Superconductivity Vol. Volume 471 ( Issues 21-22 ) page： pp. 1174-1176 2011

Status of the high brightness polarized electron source using transmission photocathode

N. Yamamoto, X.G.Jin, A. Mano, T. Ujihara, Y. Takeda, S. Okumi, T. Nakanishi, T. Yasue, T. Koshikawa, T.Oshima, T. Saka and H. Horinaka,

Vol. 298 page： 012017 2011

Strain of GaAs/GaAsP superlattices used as spin-polarized electron photocathodes, determined by X-ray diffraction Reviewed

T. Saka, Y. Ishida, M. Kanda, X.G. Jin, Y. Maeda, S. Fuchi, T. Ujihara, Y. Takeda, T. Matsuyama, H. Horinaka, T. Kato, N. Yamamoto, A. Mano, Y. Nakagawa, M. Kuwahara, S. Okumi, T. Nakanishi, M. Yamamoto, T. Ohshima, T. Kohashi, M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa

-Journal of Surface Science and Nanotechnology Vol. 8 page： 125-130 2010

Stacking Faults around the hetero-interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth Reviewed

K. Seki, K. Morimoto, T. Ujihara, T. Tokunaga, K. Sasaki, K. Kuroda, and Y. Takeda

Mater. Sci. Forum Vol. 645-648 page： 363-366 2010

Real time magnetic imaging by spin-polarized low energy electron microscopy with highly spin-polarized and high brightness electron gun Reviewed

M. Suzuki, M. Hashimoto, T. Yasue, T. Koshikawa, Y. Nakagawa, T. Konomi, A. Mano, N. Yamamoto, M. Kuwahara, M. Yamamoto, S. Okumi, T. Nakanishi, X.G. Jin, T. Ujihara, Y. Takeda, T. Kohashi, T. Ohshima, T. Saka, T. Kato, and H. Horinaka

Appl. Phys. Express Vol. 3 page： 026601 2010

Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattices. Reviewed

X.G. Jin, Y. Maeda, T. Sasaki, S. Arai, Y. Ishida, M. Kanda, S. Fuchi, T. Ujihara, T. Saka, and Y. Takeda

J. Appl. Phys. Vol. 108 ( 9 ) page： 094509 - 094509-6 2010

TEM analysis of SiC crystal grown on (001) 3C-SiC CVD substrate by solution growth Reviewed

K. Morimoto, R.Tanaka, K. Seki, T. Tokunaga, T. Ujihara, K. Sasaki, Y. Takeda, K. Kuroda

International Journal of Advanced Microscopy and Theoretical Calculations Vol. Letters 2 page： pp 242-243 2010

In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy Reviewed

T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, and H. Ikuta

Appl. Phys. Lett. Vol. 97 ( 4 ) page： 042509 2010

High Temperature Solution Growth on Free-standing (001)3C-SiC Epilayers Reviewed

R. Tanaka, K. Seki, T. Ujihara, Y. Takeda

Mater. Sci Forum Vol. 615-617 page： 37-40 2009

High Brightness and High Polarization Electron Source Using Transmission Photocathode Reviewed

N. Yamamoto, X. Jin, A. Mano, Y. Nakagawa, T. Nakanishi, T. Ujihara, S. Okumi, M. Yamamoto, T. Konomi, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa

AIP Proceedings Vol. 1149 page： 1052-1056 2009

Status of 200keV Beam Operations at Nagoya University Reviewed

M. Yamamoto, T. Konomi, S. Okumi, Y. Nakagawa, N. Yamamoto, M.Tanioku, X. Jin, T. Ujihara, Y. Takeda, F. Fukuta, H. Matsumoto

AIP Proceedings Vol. 1149 page： 987-991 2009

Shape transformation of adsorbed vesicles on oxide surfaces: Effect of substrate material and photo-irradiation Reviewed

R. Tero, T. Ujihara and T. Urisu

Trans. Mater. Res. Soc. Jpn. Vol. 34 ( 2 ) page： 183-188 2009

Effects of Applied Voltage on the Size of Phase-Separated Domains in DMPS-DOPC Lipid Binary Bilayers Supported on SiO2/Si Substrates Reviewed

Y. Yamauchi, T. Ujihara, R. Tero and Y. Takeda

Trans. Mater. Res. Soc. Jpn. Vol. 34 ( 2 ) page： 217-220 2009

Local Condensation of Artificial Raft Domains under Light Irradiation in Supported Lipid Bilayer of PSM-DOPC-Cholesterol System Reviewed

T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero and Y. Takeda

Trans. Mater. Res. Soc. Jpn. Vol. 34 ( 2 ) page： 179-182 2009

次世代のＳｉＣ高品質基板結晶作製技術　溶液法によりマイクロパイプ・基底面転位を低減　産学の連携を深め、実用化をめざす

宇治原徹, 竹田美和

Semiconductor FPD World Vol. 11 page： 55-58 2009

ＳｉＣ単結晶の溶液成長

宇治原徹

Materials Stage Vol. 9 page： 46-49 2009

Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy Reviewed

Takahiko Kawaguchi, Hiroki Uemura, Toshiya Ohno, Ryotaro Watanabe, Masao Tabuchi, Toru Ujihara, Koshi Takenaka, Yoshikazu Takeda, and Hiroshi Ikuta

Applied Physics Express Vol. 2 page： 093002 2009

Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates Reviewed

T. Saka, T. Kato, X.G. Jin, M. Tanioku, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Matsuyama, T. Yasue, and T. Koshikawa

Phys. Status Solidi Vol. 8 page： 1785 2009

*Stability Growth Condition for 3C-SiC Crystals by Solution Technique Reviewed

T. Ujiahra, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, Y. Takeda,

Mater. Sci Forum Vol. 600-603 page： 63-66 2009

Low temperature solution growth of 3C-SiC crystals in Si-Ge-Ti solvent Reviewed

R. Tanaka, T. Ujihara, Y. Takeda,

Mater. Sci Forum Vol. 600-603 page： 59-62 2009

Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method Reviewed

K. Seki, R. Tanaka, T. Ujihara, Y. Takeda,

Mater. Sci Forum Vol. 615-617 page： 27-30 2009

Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy Reviewed

Masaki Takihara, Takuji Takahashi, Toru Ujihara

Appl. Phys. Lett. Vol. 95 page： 19 2009

High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers Reviewed

N. Yamamoto, Y. Nakanishi, A. Mano, Y. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X. G. Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara

J. Appl. Phys. Vol. 103 page： 64905 2008

固体表面物性がサポーティッドメンブレンの形成過程と構造に及ぼす影響 Reviewed

手老龍吾, 宇治原徹, 宇理須恒雄,

表面 HYOMEN(SURFACE) Vol. 46 page： 287-299 2008

Minority Carrier Lifetime in Polycrystalline Silicon Solar Cells Studied by Phot-assisted Kelvin Probe Force Microscopy Reviewed

M. Takihara, T. Ujihara, T. Takahashi

Appl. Phys. Lett. Vol. 93 page： 021902 2008

Local concentration of gel phase domains in supported lipid bilayers under light irradiation in binary mixture of phospholipids doped with dyes for photoinduced activation Reviewed

T. Ujihara, S. Suzuki, Y. Yamauchi, R. Tero, Y. Takeda,

Langmuir Vol. 24 page： 10974-10980 2008

Lipid Bilayer Membrane with Atomic Step Structure:Supported Bilayer on Step-and-Terrace TiO2(100) Surface Reviewed

R. Tero, T. Ujihara, T. Urisu,

Langmuir Vol. 24 page： 11567-11576 2008

Highly spin-polarized electron photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer Reviewed

X.G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, and T. Koshikawa

J. Crystal Gorwth Vol. 310 page： 5039-5043 2008

" 歪み超格子スピン偏極電子源構造におけるバッファ層歪み緩和過程と偏極度の関係,"

"前多悠也, 金秀光, 谷奥雅俊, 渕真悟, 宇治原徹, 竹田美和, 山本尚人,中川靖英, 山本将博, 奥見正治, 中西彊, 坂貴, 堀中博道, 加藤俊宏, 安江常夫, 越川孝範"

信学技報 Vol. 108 page： 75-84 2008

Effects of absorbed group-V atoms on the size distribution and optical properties of InAsP quantum dots fabricated by the droplet hetero-epitaxy Reviewed

S. Fuchi, S. Miyake, S. Kawamura, W.S. Lee, T. Ujihara, Y. Takeda

J. Crystal Gorwth Vol. 310 page： 2239-2243 2008

*Solution growth of high-quality 3C-SiC crystals Reviewed

T. Ujihara, R. Maekawa, R. Tanaka, K. Sasaki, K. Kuroda, and Y. Takeda

J. Crystal Gorwth Vol. 310 page： 1438-1442 2008

*Super-high brightness spin-polarized transmission photocathode based on GaAs-GaAsP strained superlattice structure on GaP substrate Reviewed

X.G. Jin, N. Yamamoto,Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi11, T. Saka, H. Horinaka, T. Yasue, and T. Koshikawa

Appl. Phys. Express Vol. 1 page： 45002 2008

Supported lipid bilayer membranes on SiO2 and TiO2: substrate effects on membrane formation and shape transformation Reviewed

R. Tero, T. Ujihara, T. Urisu

Proceedings of SPIE Vol. 6769 page： 1-12 2007

" Er,O共添加GaAsを有する分離閉じ込め構造による1.5μm帯の電流注入による発光強度の増大,"

宇木大輔, 山口岳宏, 田中雄太, 渕真悟, 宇治原徹, 竹田美和

信学技報 Vol. 107 page： 29-34 2007

"歪み補償型GaAs/GaAsP超格子偏極電子源の特性向上,"

加藤鷹紀, 酒井良介, 谷奥雅俊, 中川靖英, 前田義紀, 金秀光, 渕真悟, 山本将博, 宇治原徹, 中西彊, 竹田美和

信学技報 Vol. 107 page： 109-114 2007

生体膜における相分離構造に関する研究

宇治原徹

まてりあ Vol. 46 page： 433 2007

Photovoltage mapping on polycrystalline silicon solar cells by Kelvin probe force microscopy with piezoresistive cantilever Reviewed

M. Takihara, T. Igarashi, T. Ujihara and T. Takahashi

Jpn. J. Appl. Phys. Part 1 Vol. 46 page： 5548-5551 2007

Thermal emittance measurements for electron beams produced from bulk and superlattice negative electron affinity photocathods Reviewed

N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Sakai, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T. Nakanishi, M. Kuriki, C. Bo, T. Ujihara and Y. Takeda

J. Appl. Phys. Vol. 102 page： 24904 2007

"Effect of Li doping on photoluminescence from Er, O-codoped GaAs" Reviewed

D. Uki, H. Ohnishi, T. Yamaguchi, Y. Takemori, A. Koizumi, S. Fuchi, T. Ujihara and Y. Takeda

J. Crystal Growth Vol. 298 page： 69-72 2007

Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method Reviewed

"T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda"

Appl. Phys. Lett. Vol. 89 page： 083110 2006

Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique Reviewed

K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, and K. Nakajima

Mater. Sci Forum Vol. 527-529 page： 119-122 2006

分散量子ドット構造を利用した広帯域発光素子 Reviewed

李祐植, 三宅信輔, 渕真悟, 宇治原徹, 竹田美和

日本結晶成長学会誌 Vol. 33 page： 106-110 2006

Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by AFM with Piezo-resistive Cantilever Reviewed

T. Igarashi, T. Ujihara, T. Takahashi

Jpn. J. Appl. Phys. Part 1 Vol. 45 page： 2128-2131 2006

"Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution" Reviewed

Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara and Kazuo Nakajima

Mater. Sci Forum Vol. 527-529 page： 115-118 2006

Evaluation of Strain Field around SiC Particle in Poly-Crystalline Silicon

"T. Ujihara, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda,"

Proc. IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC4) page： 272 2006

GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化

宇治原徹, 陳　博,　安井健一,　酒井良介、山本将博、中西　彊、竹田美和

信学技報 Vol. 106 page： 79-84 2006

The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution Reviewed

S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda

page： p. 208-210 2006

Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy Reviewed

T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda

J. Crystal Growth Vol. 289 page： 89-95 2006

Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study Reviewed

T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima

Thin Solid Films Vol. 476 page： 206-209 2005

Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent Reviewed

Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara

J. Appl. Phys. Vol. 98 page： 073708 2005

メサ構造ＩｎＰテンプレート基板へのＩｎＡｓ量子ドットの成長とサイズ制御

宇治原徹, 吉田義浩,　李祐植,　竹田美和

信学技報 Vol. 105 page： 23-26 2005

Structural properties of directionally grown polycrystalline SiGe for solar cells Reviewed

K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima

J.Cryst.Growth. Vol. 275 page： 467-473 2005

Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams Reviewed

K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki

International Journal of Material & Product Technology. Vol. 22 page： 185-212 2005

"Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate" Reviewed

G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima

J.Cryst.Growth. Vol. 273 page： 594-602 2005

A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal Reviewed

Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima

J.Cryst.Growth Vol. 276 page： 393-400 2005

太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性　―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価― Reviewed

藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄

日本結晶成長学会誌 Vol. 32 page： 291-296 2005

Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM

T. Ujihara, K. Nakajima, Y. Takeda

Proc. 15th PVSEC page： 118-119 2005

Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Reviewed

K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima

Mater. Sci Forum Vol. 483 page： 13-16 2005

Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE Reviewed

Toru Ujihara, Yoshihiro Yoshida, Woo Sik Lee, Ryo Oga, Yoshikazu Takeda

page： p112 2005

Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer Reviewed

U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima

J. Cryst. Growth Vol. 275 page： 1203-1207 2005

Grain growth behaviors of polycrystalline silicon during melt growth processes Reviewed

K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima

J. Crystal Growth Vol. 266 page： 441-448 2004

Molten metal flux growth and properties of CrSi2 Reviewed

T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima

JOURNAL OF ALLOYS AND COMPOUNDS. Vol. 383 page： 319-321 2004

Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer Reviewed

"A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki"

Appl. Phys. Lett. Vol. 84 page： 2802-2804 2004

In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy Reviewed

G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima

J. Crystal Growth Vol. 262 page： 536-542 2004

Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate Reviewed

G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima

J. Crystal Growth Vol. 262 page： 196-201 2004

Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime Reviewed

N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima

Thin Solid Films Vol. 451-452 page： 604-607 2004

In-situ observations of melt growth behavior of polycrystalline silicon Reviewed

K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima

J. Crystal Growth Vol. 262 page： 124 2004

Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations Reviewed

K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido

J. Crystal Growth Vol. 260 page： 372-383 2004

On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates Reviewed

K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima

Appl. Phys. Lett. Vol. 85 page： 1335-1337 2004

Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe Reviewed

N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima

Jpn. J. Appl. Phys. Vol. 43 page： L250-L252 2004

Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution Reviewed

W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa

J. Appl. Phys. Vol. 96 (2) page： 1238-1241 2004

Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation Reviewed

Y.Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara

Jpn. J. Appl. Phys. Vol. Feb-46 page： L907 2004

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate Reviewed

K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa

Appl. Surf. Sci. Vol. 224 page： 604-607 2004

Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy Reviewed

T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima

J. Crystal Growth Vol. 266 page： 467-474 2004

材料工学からの太陽電池研究

宇治原徹

まてりあ Vol. 43 page： 949-953 2004

SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶

中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦

日本結晶成長学会誌 Vol. 31 page： 29-37 2004

Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Reviewed

Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima

Mater. Sci Forum Vol. 457-460 page： 633-637 2004

Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method Reviewed

Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima

page： ? 2004

TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Reviewed

K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima

Mater. Sci Forum Vol. 457-460 page： 347-351 2004

Solution growth of self standing 6H-SiC single crystal using metal solvent Reviewed

K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima

Mater. Sci Forum Vol. 457-460 page： 123-126 2004

Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals Reviewed

Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima

J. Crystal Growth Vol. 254 page： 188-195 2003

High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature Reviewed

T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima

Jpn. J. Appl. Phys. Vol. 42 page： L217-L219 2003

Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix Reviewed

N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima

Journal of Applied Physics Vol. 94 page： 916-920 2003

Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Reviewed

A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima

Applied Physics Letters Vol. 83 page： 1258-1260 2003

Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed

K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa

Jpn. J. Appl. Phys. Vol. 42 page： L232-L234 2003

Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Reviewed

Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima

J. Crystal Growth Vol. 250 page： 298-304 2003

Hightemperature solution growth and characterization of chromium disilicide Reviewed

T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima

Jpn. J. Appl. Phys. Vol. 42 page： 7292-7293 2003

Stacked Ge islands for photovoltaic applications Reviewed

N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki

Sci. Tech. Adv. Mat Vol. 4 page： 367-370 2003

What is the most important growth parameter on crystal quality of the silicon layer by LPE method? Reviewed

T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima

( 2 ) page： 1241 - 1244 2003

Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure Reviewed

A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima

( 3 ) page： 2746 - 2749 2003

Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application Reviewed

N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima

( 1 ) page： 98-101 2003

Direct observations of crystal growth from silicon melt Reviewed

K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima

( 1 ) page： 110 - 113 2003

Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution Reviewed

K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima

( 1 ) page： 158 - 160 2003

Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications Reviewed

K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido

Sol. Energy Mater. Sol. Cells Vol. 72 page： 93-100 2002

New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law Reviewed

T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

J. Crystal Growth Vol. 241 page： 387-394 2002

Crystal growth of silicon-germanium homogeneous bulk crystal and related measurement

J. Japanese association for crystal growth Vol. 29 ( 5 ) page： 339 2002

Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution Reviewed

N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

J. Appl. Phys. Vol. 92 page： 7098-7101 2002

Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law Reviewed

T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

J. Non-Cryst. Solids Vol. 312-314 page： 196-202 2002

In situ observation of crystal growth behavior from silicon melt Reviewed

K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima

J. Crystal Growth Vol. 243 page： 275-282 2002

Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals Reviewed

K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido

J. Crystal Growth Vol. 240 page： 370-381 2002

Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells Reviewed

K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido

Sol. Energy Mater. Sol. Cells Vol. 73 page： 305-320 2002

Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution Reviewed

N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

Jpn. J. Appl. Phys. Vol. 41 page： 4462-4465 2002

Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures Reviewed

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima

Mat. Sci. Eng. B Vol. 89 page： 364-367 2002

In-situ monitoring system of the position and temperature at the crystal-solution interface Reviewed

G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima

J. Crystal Growth Vol. 236 page： 364-367 2002

*Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions Reviewed

T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima

J. Crystal Growth Vol. 242 page： 313-320 2002

Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties Reviewed

Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Yoshihiro Murakami, Kuninori Kitahara and Kazuo Nakajima

page： 1339-1342 2002

Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution Reviewed

N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima, and H. Yaguchi

Jpn. J. Appl. Phys. Vol. 41 page： L37-L39 2002

In-situ observation of the Marangoni convection of a NaCl aqueous solutions under microgravity Reviewed

G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, N. Usami, and K. Nakajima

J. Crystal Growth Vol. 234 page： 516-522 2002

Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique Reviewed

Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Noritaka Usami, Gen Sazaki, Kazuo Nakajima

page： 408-411 2002

Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency Reviewed

N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima

page： 247-249 2002

Assessing composition gradient energy effects due to spin interaction on the spinodal decomposition of Fe-Cr Reviewed

T. Ujihara, K. Osamura

Mater. Sci. Eng. A Vol. 312 page： 128 2001

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method Reviewed

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K.Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa, and S. Kodama

Semicon. Sci. and Technol. Vol. 16 page： 699-703 2001

Effects of misfit dislocation and AlN buffer layer on the GaInN/GaN phase diagram of the growth modes Reviewed

K. Nakajima, T. Ujihara, and G. Sazaki

J. Appl. Phys. Vol. 89 page： 146-153 2001

Growth of SixGe1-x (x=0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal-Solution Interface Reviewed

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami, and K.Nakajima

Jpn. J. Appl. Phys. Vol. 44 page： 4141-4144 2001

Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in-situ monitoring system Reviewed

Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, and K. Nakajima

J. Crystal Growth Vol. 224 page： 204-211 2001

Physical model for the evaluation of solid-liquid interfacial tension in silicon Reviewed

T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, K. Nakajima

J. Appl. Phys. Vol. 90 page： 750-755 2001

Kinetic analysis of spinodal decomposition process in Fe-Cr alloys by small angle neutron scattering Reviewed

T. Ujihara, K. Osamura

Acta Materialia Vol. 48 page： 1629-1637 2000

Effects of the dislocation density and surface energy on phase diagrams of the S-K mode for the GaInN/GaN and GaPSb/GaP systems Reviewed

K. Nakajima, T. Ujihara, S. Miyashita, and G. Sazaki

In Mat. Res. Soc. Symp. Proc. Vol. 618 page： 285-290 2000

"Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies" Reviewed

K. Nakajima, T. Ujihara, G. Sazaki, and N. Usami

J. Crystal Growth Vol. 220 page： 413-424 2000

SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications Reviewed

N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, Y. Yakabe, T. Kondo, S. Koh, B. Zhang, Y. Segawa,Y. Shiraki, S. Kodama, and K. Nakajima

Appl. Phys. Lett. Vol. 77 page： 3565-3567 2000

In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry Reviewed

T. Ujihara, G. Sazaki, S. Miyashita, N. Usami, K. Nakajima

Jpn J. Appl. Phys Vol. 39 page： 5981-5982 2000

Thickness dependence of stable structure of the Stranski-Krastanov mode in the GaPSb/GaP system Reviewed

K. Nakajima, T. Ujihara, S. Miyashita, G. Sazaki

Journal of Crystal Growth Vol. 209 page： 637-647 2000

"The excess free energy due to composition gradient for ferromagnetic alloys""" Reviewed

T. Ujihara, K. Osamura

Acta Materialia Vol. 47 page： 3041-3048 1999

Kinetics of Spinodal Decomposition with Composition Dependent Mobility Reviewed

T. Ujihara, K. Osamura

Proceeding of the International Conference on Solid-Solid Phase Transformation Vol. 99 page： 117-120 1999

Magnetic damping of the temperature-driven convection in NaCl aqueous solution using a static and homogenous of 10 T Reviewed

G. Sazaki, S. D. Drubin, S. Miyashita, T. Ujihara, K. Nakajima, M. Motokawa

Jpn. J. Appl. Phys. Vol. 38 page： L842-L844 1999

Phase diagrams and stable structures for Sranski-Krastanov mode of III-V ternary quantum dots Reviewed

K. Nakajima, T. Ujihara, S. Miyashita and G. Sazaki

Journal of Korean Association of Crystal Growth Vol. 9 page： 387-395 1999

Effect of nonlinearity of the evolution equation on the spinodal decomposition process in alloys Reviewed

T. Ujihara, K. Osamura

Physical Review Vol. B58 ( 17 ) page： 11371 1998

Shape Anisotropy of GP Zone in Early Decomposition Process of Al-Zn Binary Alloy Reviewed

J. Japan Inst. Metals Vol. 62 ( 2 ) page： 117 1998

Effect of Third Elements on Cu Precipitation on Fe-Cu Alloys Reviewed

Toru Ujihara, Kozo Osamura

Ann. Physiq. Vol. C3 ( 20 ) page： 3 1995

Phase Decomposition in Fe-Cr-Mo Alloy Reviewed

Kozo Osamura Toru Ujihara, Hiroshi Okuda, Michihiro Furusaka

Proc. Int. Conf. On PTM'94 Solid-Solid Transformation in Inorganic Materials page： ",377" 1994

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