Papers - UJIHARA, Toru
-
Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents Reviewed
Komatsu Naoyoshi, Mitani Takeshi, Hayashi Yuichiro, Kato Tomohisa, Harada Shunta, Ujihara Toru, Okumura Hajime
JOURNAL OF CRYSTAL GROWTH Vol. 458 page： 37-43 2017.1
-
Phase transition process in DDAB supported lipid bilayer
"T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa"
J. Cryst. Growth Vol. 468 page： 88-92 2017
-
Septin Interferes with the Temperature-Dependent Domain Formation and Disappearance of Lipid Bilayer Membranes Reviewed
S. Yamada, T. Isogai, R. Tero, Y. Tanaka-Takiguchi, T. Ujihara, M. Kinoshita, K. Takiguchi
Langmuir page： 12823–12832 2016.11
-
Conversion behavior of threading screw dislocations on C face with different surface morphology during 4H-SiC solution growth Reviewed
S. Xiao, S. Harada, K. Murayama, M. Tagawa, T. Ujihara
Cryst. Growth Des. page： 6436–6439 2016.10
-
Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO 3 solution containing Ag nanoparticles Reviewed
H. Niinomi, T. Sugiyama, M. Tagawa, K. Murayama, S. Harada, T. Ujihara
CrystEngComm Vol. 18 ( 39 ) page： 7441-7448 2016.7
-
Characterization of V-shaped defects formed during the 4H-SiC solution growth by transmission electron microscopy and X-ray topography analysis
"S. Xiao, S. Harada, K. Murayama, T. Ujihara"
Cryst. Growth Des. Vol. 16 ( 9 ) page： 5136-5140 2016.7
-
Effect of magnesium ion concentration on two-dimensional structure of DNA-functionalized nanoparticles on supported lipid bilayer Reviewed
T. Isogai, E. Akada, S. Nakada, N. Yoshida, R. Tero, S. Harada, T. Ujihara, M. Tagawa
Japanese Journal of Applied Physics Vol. 55 ( 3S2 ) page： 03DF11 2016.3
-
Spatial Distribution of Carrier Concentration in 4H-SiC Crystal Grown by Solution Method Reviewed
Z. Wang, T. Kawaguchi, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Kato, T. Ujihara
Mater. Sci. Forum, Vol. 858 page： 57-60 2016
-
High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent Reviewed
S. Watanabe, M. Nagaya, Y. Takeuchi, K. Aoyagi, K. Aoyagi, S. Harada, M. Tagawa, T. Ujihara
Mater. Sci. Forum, Vol. 858 page： 1210-1213 2016
-
The Boersch effect in a picosecond pulsed electron beam emitted from a semiconductor photocathode Reviewed
Makoto Kuwahara, Yoshito Nambo, Kota Aoki, Kensuke Sameshima, Xiuguang Jin, Toru Ujihara, Hidefumi Asano, Koh Saitoh, Yoshikazu Takeda and Nobuo Tanaka
Appl. Phys. Lett. Vol. 109 page： 013108 2016
-
Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC Reviewed
T. Umezaki, D. Koike, S. Harada, T. Ujihara
Japanese Journal of Applied Physics Vol. 55 ( 12 ) page： 125601 2016
-
Two-step SiC solution growth for dislocation reduction
"K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara"
J. Cryst. Growth 2016
-
Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor Reviewed
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara
J. Cryst. Growth 2016
-
Plasmonic Heating-Assisted Laser-Induced Crystallization from a NaClO3 Unsaturated Mother Solution Reviewed
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, T. Ujihara, T.Omatsu, Y. Mori
Cryst. Growth Des. 2016
-
Enantioselective amplification on circularly polarized laser-induced chiral nucleation from a NaClO3 solution containing Ag nanoparticles Reviewed
H. Niinomi, T. Sugiyama, M. Tagawa, M. Maruyama, S. Harada, T. Ujihara
CrystEngComm Vol. 18 page： 7441-7448 2016
-
Polytype control by activity ratio of silicon to carbon during SiC solution growth using multicomponent solvents Reviewed
A. Horio, S. Harada, D. Koike, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara
Jpn. J. Appl. Phys Vol. 55 page： 01AC01 2016
-
Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth Reviewed
Shiyu Xiao, Natsumi Hara, Shunta Harada, Kenta Murayama, Kenta Aoyagi, Takenobu Sakai and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 39-42 2015
-
Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds Reviewed
Tomonori Umezaki, Daiki Koike, Shunta Harada and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 31-34 2015
-
Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC Reviewed
Kuniharu Fujii, Koichi Takei, Masahiro Aoshima, Nachimuthu Senguttuvan, Masahiko Hiratani, Toru Ujihara, Yuji Matsumoto, Tomohisa Kato, Kazuhisa Kurashige and Hajime Okumura
Materials Science Forum Vol. 821-823 page： 35-38 2015
-
3C-SiC Crystal on Sapphire by Solution Growth Method Reviewed
Kenji Shibata, Shunta Harada and Toru Ujihara
Materials Science Forum Vol. 821-823 page： 185-188 2015