Papers - UJIHARA, Toru
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GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化
宇治原徹, 陳 博, 安井健一, 酒井良介、山本将博、中西 彊、竹田美和
信学技報 Vol. 106 page： 79-84 2006
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"Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution" Reviewed
Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara and Kazuo Nakajima
Mater. Sci Forum Vol. 527-529 page： 115-118 2006
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Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique Reviewed
K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, and K. Nakajima
Mater. Sci Forum Vol. 527-529 page： 119-122 2006
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分散量子ドット構造を利用した広帯域発光素子 Reviewed Open Access
李祐植, 三宅信輔, 渕真悟, 宇治原徹, 竹田美和
日本結晶成長学会誌 Vol. 33 page： 106-110 2006
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Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by AFM with Piezo-resistive Cantilever Reviewed
T. Igarashi, T. Ujihara, T. Takahashi
Jpn. J. Appl. Phys. Part 1 Vol. 45 page： 2128-2131 2006
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Evaluation of Strain Field around SiC Particle in Poly-Crystalline Silicon
"T. Ujihara, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda,"
Proc. IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC4) page： 272 2006
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Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy Reviewed
T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda
J. Crystal Growth Vol. 289 page： 89-95 2006
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The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution Reviewed
S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda
page： p. 208-210 2006
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Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study Reviewed
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
Thin Solid Films Vol. 476 page： 206-209 2005
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太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性 ―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価― Reviewed Open Access
藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄
日本結晶成長学会誌 Vol. 32 page： 291-296 2005
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Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent Reviewed
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara
J. Appl. Phys. Vol. 98 page： 073708 2005
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メサ構造ＩｎＰテンプレート基板へのＩｎＡｓ量子ドットの成長とサイズ制御
宇治原 徹, 吉田義浩, 李祐植, 竹田美和
信学技報 Vol. 105 page： 23-26 2005
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Structural properties of directionally grown polycrystalline SiGe for solar cells Reviewed
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima
J.Cryst.Growth. Vol. 275 page： 467-473 2005
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Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams Reviewed
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki
International Journal of Material & Product Technology. Vol. 22 page： 185-212 2005
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"Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate" Reviewed
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
J.Cryst.Growth. Vol. 273 page： 594-602 2005
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A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal Reviewed
Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima
J.Cryst.Growth Vol. 276 page： 393-400 2005
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Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Reviewed
K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima
Mater. Sci Forum Vol. 483 page： 13-16 2005
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Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM
T. Ujihara, K. Nakajima, Y. Takeda
Proc. 15th PVSEC page： 118-119 2005
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Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE Reviewed
Toru Ujihara, Yoshihiro Yoshida, Woo Sik Lee, Ryo Oga, Yoshikazu Takeda
page： p112 2005
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Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer Reviewed
U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima
J. Cryst. Growth Vol. 275 page： 1203-1207 2005