Papers - UJIHARA, Toru
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GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化
宇治原徹, 陳 博, 安井健一, 酒井良介、山本将博、中西 彊、竹田美和
信学技報 Vol. 106 page： 79-84 2006
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The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution Reviewed
S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda
page： p. 208-210 2006
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Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy Reviewed
T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda
J. Crystal Growth Vol. 289 page： 89-95 2006
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Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study Reviewed
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima
Thin Solid Films Vol. 476 page： 206-209 2005
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Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent Reviewed
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara
J. Appl. Phys. Vol. 98 page： 073708 2005
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メサ構造ＩｎＰテンプレート基板へのＩｎＡｓ量子ドットの成長とサイズ制御
宇治原 徹, 吉田義浩, 李祐植, 竹田美和
信学技報 Vol. 105 page： 23-26 2005
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Structural properties of directionally grown polycrystalline SiGe for solar cells Reviewed
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima
J.Cryst.Growth. Vol. 275 page： 467-473 2005
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Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams Reviewed
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki
International Journal of Material & Product Technology. Vol. 22 page： 185-212 2005
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"Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate" Reviewed
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima
J.Cryst.Growth. Vol. 273 page： 594-602 2005
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A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal Reviewed
Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima
J.Cryst.Growth Vol. 276 page： 393-400 2005
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太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性 ―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価― Reviewed
藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄
日本結晶成長学会誌 Vol. 32 page： 291-296 2005
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Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM
T. Ujihara, K. Nakajima, Y. Takeda
Proc. 15th PVSEC page： 118-119 2005
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Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Reviewed
K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima
Mater. Sci Forum Vol. 483 page： 13-16 2005
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Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE Reviewed
Toru Ujihara, Yoshihiro Yoshida, Woo Sik Lee, Ryo Oga, Yoshikazu Takeda
page： p112 2005
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Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer Reviewed
U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima
J. Cryst. Growth Vol. 275 page： 1203-1207 2005
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Grain growth behaviors of polycrystalline silicon during melt growth processes Reviewed
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
J. Crystal Growth Vol. 266 page： 441-448 2004
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Molten metal flux growth and properties of CrSi2 Reviewed
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima
JOURNAL OF ALLOYS AND COMPOUNDS. Vol. 383 page： 319-321 2004
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Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer Reviewed
"A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki"
Appl. Phys. Lett. Vol. 84 page： 2802-2804 2004
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In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy Reviewed
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima
J. Crystal Growth Vol. 262 page： 536-542 2004
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Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate Reviewed
G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima
J. Crystal Growth Vol. 262 page： 196-201 2004