Papers - UJIHARA, Toru
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Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Reviewed
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth Vol. 250 page： 298-304 2003
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Hightemperature solution growth and characterization of chromium disilicide Reviewed
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima
Jpn. J. Appl. Phys. Vol. 42 page： 7292-7293 2003
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Stacked Ge islands for photovoltaic applications Reviewed
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Sci. Tech. Adv. Mat Vol. 4 page： 367-370 2003
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What is the most important growth parameter on crystal quality of the silicon layer by LPE method? Reviewed
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
( 2 ) page： 1241 - 1244 2003
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Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure Reviewed
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima
( 3 ) page： 2746 - 2749 2003
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Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application Reviewed
N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima
( 1 ) page： 98-101 2003
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Direct observations of crystal growth from silicon melt Reviewed
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima
( 1 ) page： 110 - 113 2003
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Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution Reviewed
K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima
( 1 ) page： 158 - 160 2003
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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications Reviewed
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido
Sol. Energy Mater. Sol. Cells Vol. 72 page： 93-100 2002
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New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth Vol. 241 page： 387-394 2002
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Crystal growth of silicon-germanium homogeneous bulk crystal and related measurement
J. Japanese association for crystal growth Vol. 29 ( 5 ) page： 339 2002
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Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution Reviewed
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
J. Appl. Phys. Vol. 92 page： 7098-7101 2002
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Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Non-Cryst. Solids Vol. 312-314 page： 196-202 2002
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In situ observation of crystal growth behavior from silicon melt Reviewed
K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima
J. Crystal Growth Vol. 243 page： 275-282 2002
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Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals Reviewed
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido
J. Crystal Growth Vol. 240 page： 370-381 2002
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Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells Reviewed
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Sol. Energy Mater. Sol. Cells Vol. 73 page： 305-320 2002
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Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution Reviewed
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
Jpn. J. Appl. Phys. Vol. 41 page： 4462-4465 2002
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Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures Reviewed
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima
Mat. Sci. Eng. B Vol. 89 page： 364-367 2002
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In-situ monitoring system of the position and temperature at the crystal-solution interface Reviewed
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth Vol. 236 page： 364-367 2002
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*Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Crystal Growth Vol. 242 page： 313-320 2002