Papers - UJIHARA, Toru
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Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals Reviewed
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima
J. Crystal Growth Vol. 254 page： 188-195 2003
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Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Reviewed
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth Vol. 250 page： 298-304 2003
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Hightemperature solution growth and characterization of chromium disilicide Reviewed
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima
Jpn. J. Appl. Phys. Vol. 42 page： 7292-7293 2003
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Stacked Ge islands for photovoltaic applications Reviewed Open Access
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Sci. Tech. Adv. Mat Vol. 4 page： 367-370 2003
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Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Jpn. J. Appl. Phys. Vol. 42 page： L232-L234 2003
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High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature Reviewed
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
Jpn. J. Appl. Phys. Vol. 42 page： L217-L219 2003
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Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix Reviewed
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima
Journal of Applied Physics Vol. 94 page： 916-920 2003
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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Reviewed
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Applied Physics Letters Vol. 83 page： 1258-1260 2003
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Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application Reviewed
N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima
( 1 ) page： 98-101 2003
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Direct observations of crystal growth from silicon melt Reviewed
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima
( 1 ) page： 110 - 113 2003
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Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution Reviewed
K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima
( 1 ) page： 158 - 160 2003
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What is the most important growth parameter on crystal quality of the silicon layer by LPE method? Reviewed
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
( 2 ) page： 1241 - 1244 2003
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Improved quantum efficiency of solar cells with ge dots stacked in multilayer structure Reviewed
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, K. Sawano*, G. Sazaki, Y. Shiraki* and K. Nakajima
( 3 ) page： 2746 - 2749 2003
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Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications Reviewed
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido
Sol. Energy Mater. Sol. Cells Vol. 72 page： 93-100 2002
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Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution Reviewed
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
J. Appl. Phys. Vol. 92 page： 7098-7101 2002
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Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick's first law Reviewed
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima
J. Non-Cryst. Solids Vol. 312-314 page： 196-202 2002
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In situ observation of crystal growth behavior from silicon melt Reviewed
K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima
J. Crystal Growth Vol. 243 page： 275-282 2002
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Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals Reviewed
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido
J. Crystal Growth Vol. 240 page： 370-381 2002
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Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells Reviewed
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido
Sol. Energy Mater. Sol. Cells Vol. 73 page： 305-320 2002
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Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution Reviewed
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima
Jpn. J. Appl. Phys. Vol. 41 page： 4462-4465 2002