Papers - UJIHARA, Toru
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Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe Reviewed
N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima
Jpn. J. Appl. Phys. Vol. 43 page： L250-L252 2004
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Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution Reviewed
W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa
J. Appl. Phys. Vol. 96 (2) page： 1238-1241 2004
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Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation Reviewed
Y.Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara
Jpn. J. Appl. Phys. Vol. Feb-46 page： L907 2004
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Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate Reviewed
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Appl. Surf. Sci. Vol. 224 page： 604-607 2004
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Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy Reviewed
T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
J. Crystal Growth Vol. 266 page： 467-474 2004
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材料工学からの太陽電池研究
宇治原徹
まてりあ Vol. 43 page： 949-953 2004
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SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶
中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦
日本結晶成長学会誌 Vol. 31 page： 29-37 2004
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Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Reviewed
Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima
Mater. Sci Forum Vol. 457-460 page： 633-637 2004
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Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method Reviewed
Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima
page： ? 2004
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TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Reviewed
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima
Mater. Sci Forum Vol. 457-460 page： 347-351 2004
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Solution growth of self standing 6H-SiC single crystal using metal solvent Reviewed
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima
Mater. Sci Forum Vol. 457-460 page： 123-126 2004
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Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals Reviewed
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima
J. Crystal Growth Vol. 254 page： 188-195 2003
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High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature Reviewed
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima
Jpn. J. Appl. Phys. Vol. 42 page： L217-L219 2003
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Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix Reviewed
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima
Journal of Applied Physics Vol. 94 page： 916-920 2003
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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Reviewed
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Applied Physics Letters Vol. 83 page： 1258-1260 2003
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Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Jpn. J. Appl. Phys. Vol. 42 page： L232-L234 2003
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Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Reviewed
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth Vol. 250 page： 298-304 2003
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Hightemperature solution growth and characterization of chromium disilicide Reviewed
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, M. Oku, Y.Yokoyama, S. Kohiki , Y. Kawazoe and K. Nakajima
Jpn. J. Appl. Phys. Vol. 42 page： 7292-7293 2003
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Stacked Ge islands for photovoltaic applications Reviewed
N. Usami, A. Alguno, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki
Sci. Tech. Adv. Mat Vol. 4 page： 367-370 2003
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What is the most important growth parameter on crystal quality of the silicon layer by LPE method? Reviewed
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido and K. Nakajima
( 2 ) page： 1241 - 1244 2003