Papers - UJIHARA, Toru
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Grain growth behaviors of polycrystalline silicon during melt growth processes Reviewed
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
J. Crystal Growth Vol. 266 page： 441-448 2004
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On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates Reviewed
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima
Appl. Phys. Lett. Vol. 85 page： 1335-1337 2004
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SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶
中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦
日本結晶成長学会誌 Vol. 31 page： 29-37 2004
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材料工学からの太陽電池研究
宇治原徹
まてりあ Vol. 43 page： 949-953 2004
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Molten metal flux growth and properties of CrSi2 Reviewed
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima
JOURNAL OF ALLOYS AND COMPOUNDS. Vol. 383 page： 319-321 2004
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Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer Reviewed
"A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki"
Appl. Phys. Lett. Vol. 84 page： 2802-2804 2004
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In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy Reviewed
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima
J. Crystal Growth Vol. 262 page： 536-542 2004
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Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate Reviewed
G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima
J. Crystal Growth Vol. 262 page： 196-201 2004
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Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime Reviewed
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Thin Solid Films Vol. 451-452 page： 604-607 2004
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In-situ observations of melt growth behavior of polycrystalline silicon Reviewed
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima
J. Crystal Growth Vol. 262 page： 124 2004
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Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations Reviewed
K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido
J. Crystal Growth Vol. 260 page： 372-383 2004
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Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Reviewed
Toru Ujihara, Shinji Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, and Kazuo Nakajima
Mater. Sci Forum Vol. 457-460 page： 633-637 2004
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Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method Reviewed
Toru Ujihara, Yusuke Satoh, Kazuo Obara, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Toetsu Shishido and Kazuo Nakajima
page： ? 2004
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TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent Reviewed
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima
Mater. Sci Forum Vol. 457-460 page： 347-351 2004
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Solution growth of self standing 6H-SiC single crystal using metal solvent Reviewed
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima
Mater. Sci Forum Vol. 457-460 page： 123-126 2004
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Effects of high pressure on the growth kinetics of orthorhombic lysozyme crystals Reviewed
Y. Nagatoshi, G. Sazaki, Y. Suzuki, S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima
J. Crystal Growth Vol. 254 page： 188-195 2003
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Influence of the elastic strain on the band structure of ellipsoidal SiGe coherently embedded in the Si matrix Reviewed
N. Usami, T. Ichitsubo, T. Ujihara, T. Takahashi, K. Fujiwara, G. Sazaki, and K. Nakajima
Journal of Applied Physics Vol. 94 page： 916-920 2003
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Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure Reviewed
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima
Applied Physics Letters Vol. 83 page： 1258-1260 2003
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Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa
Jpn. J. Appl. Phys. Vol. 42 page： L232-L234 2003
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Growth of SiGe bulk crystal with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Reviewed
Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima
J. Crystal Growth Vol. 250 page： 298-304 2003