Papers - UJIHARA, Toru
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Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy
Kokubo Nobuhiko, Tsunooka Yosuke, Inotsume Sho, Fujie Fumihiro, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 60 ( SA ) 2021.1
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Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth Reviewed
Dang Yifan, Zhu Can, Ikumi Motoki, Takaishi Masaki, Yu Wancheng, Huang Wei, Liu Xinbo, Kutsukake Kentaro, Harada Shunta, Tagawa Miho, Ujihara Toru
CrystEngComm Vol. 23 ( (8) ) 2021.1
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Geometrical design of a crystal growth system guided by a machine learning algorithm Reviewed
Wancheng Yu, Can Zhu, Yosuke Tsunooka, Wei Huang, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara
CrystEngComm 2021
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Explainable machine learning for the analysis of transport phenomena in top-seeded solution growth of SiC single crystal Reviewed Open Access
Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
Vol. 16 ( 1 ) 2021
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Adaptive Bayesian optimization for epitaxial growth of Si thin films under various constraints Reviewed Open Access
Osada Keiichi, Kutsukake Kentaro, Yamamoto Jun, Yamashita Shigeo, Kodera Takashi, Nagai Yuta, Horikawa Tomoyuki, Matsui Kota, Takeuchi Ichiro, Ujihara Toru
Vol. 25 2020.12
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Optimal Control of SiC Crystal Growth in the RF-TSSG System Using Reinforcement Learning Reviewed Open Access
Wang Lei, Sekimoto Atsushi, Takehara Yuto, Okano Yasunori, Ujihara Toru, Dost Sadik
Vol. 10 ( 9 ) 2020.9
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Plasmonic Manipulation of Sodium Chlorate Chiral Crystallization: Directed Chirality Transfer via Contact-Induced Polymorphic Transformation and Formation of Liquid Precursor Reviewed
Niinomi Hiromasa, Sugiyama Teruki, Tagawa Miho, Ujihara Toru, Omatsu Takashige, Miyamoto Katsuhiko, Yoshikawa Hiroshi Y., Kawamura Ryuzo, Nozawa Jun, Okada Junpei T., Uda Satoshi
CRYSTAL GROWTH & DESIGN Vol. 20 ( 8 ) page： 5493 - 5507 2020.8
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Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography Reviewed
Fujie Fumihiro, Harada Shunta, Hanada Kenji, Suo Hiromasa, Koizumi Haruhiko, Kato Tomohisa, Tagawa Miho, Ujihara Toru
ACTA MATERIALIA Vol. 194 page： 387 - 393 2020.8
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Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer Reviewed
Inotsume Sho, Kokubo Nobuhiko, Yamada Hisashi, Onda Shoichi, Kojima Jun, Ohara Junji, Harada Shunta, Tagawa Miho, Ujihara Toru
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4
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Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method Reviewed
Tanaka Atsushi, Inotsume Syo, Harada Shunta, Hanada Kenji, Honda Yoshio, Ujihara Toru, Amano Hiroshi
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vol. 257 ( 4 ) 2020.4
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Effect of Crystal Orientation of Cu Current Collectors on Cycling Stability of Li Metal Anodes Reviewed
Ishikawa Kohei, Harada Shunta, Tagawa Miho, Ujihara Toru
ACS APPLIED MATERIALS & INTERFACES Vol. 12 ( 8 ) page： 9341 - 9346 2020.2
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Bayesian optimization for a high- and uniform-crystal growth rate in the top-seeded solution growth process of silicon carbide under applied magnetic field and seed rotation Reviewed
Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH Vol. 532 2020.2
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Numerical Study of Three-Dimensional Melt Flows during the TSSG Process of SiC Crystal for the Influence of Input Parameters of RF-Coils and an External Rotating Magnetic Field Open Access
Wang Lei, Takehara Yuto, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
CRYSTALS Vol. 10 ( 2 ) 2020.2
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Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3 Reviewed
Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mitsuaki Shimizu
Phys. Status Solidi B Vol. 257 ( 2 ) page： 1900318 2020
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Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal Reviewed
Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru
CRYSTENGCOMM Vol. 21 ( 47 ) page： 7260 - 7265 2019.12
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Semi in-situ measurement of zincate ion concentration near zinc anode using background-oriented Schlieren technique Reviewed Open Access
Ito Yasumasa, Liang Xiao, Ishikawa Kohei, Ujihara Toru, Sakai Yasuhiko, Iwano Koji
Vol. 1 ( 3 ) 2019.12
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Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method Reviewed
Wang L., Horiuchi T., Sekimoto A., Okano Y., Ujihara T., Dost S.
JOURNAL OF CRYSTAL GROWTH Vol. 520 page： 72 - 81 2019.8
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Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process Reviewed
Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Ujihara Toru, Dost Sadik
JOURNAL OF CRYSTAL GROWTH Vol. 517 page： 59 - 63 2019.7
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In Situ Microscopic Observation on Surface Kinetics in Optical Trapping-Induced Crystal Growth: Step Formation, Wetting Transition, and Nonclassical Growth Reviewed
Niinomi Hiromasa, Sugiyama Teruki, Ujihara Toru, Guo Suxia, Nozawa Jun, Okada Junpei, Omatsu Takashige, Uda Satoshi
CRYSTAL GROWTH & DESIGN Vol. 19 ( 7 ) page： 4138 - 4150 2019.7
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Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4HSiC Wafer Fabricated by the Solution Growth Method Reviewed
Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Toru Ujihara
Mater. Sci. Forum Vol. 963 page： 80-84 2019.7