論文 - PRISTOVSEK Markus
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Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques 査読有り
Zettler JT, Haberland K, Zorn M, Pristovsek M, Richter W, Kurpas P, Weyers M
JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 151-162 1998年12月
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In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere 査読有り
Hardtdegen H, Pristovsek M, Menhal H, Zettler JT, Richter W, Schmitz D
JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 211-216 1998年12月
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Reconstructions of the GaAs (1 1 3) surface 査読有り
Pristovsek M, Menhal H, Wehnert T, Zettler JT, Schmidtling T, Esser N, Richter W, Setzer C, Platen J, Jacobi K
JOURNAL OF CRYSTAL GROWTH 195 巻 ( 1-4 ) 頁： 1-5 1998年12月
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Atomic structure of InP(001)-(2x4): A dimer reconstruction 査読有り
Schmidt WG, Bechstedt F, Esser N, Pristovsek M, Schultz C, Richter W
PHYSICAL REVIEW B 57 巻 ( 23 ) 頁： 14596-14599 1998年6月
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Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry 査読有り
Zettler JT, Pristovsek M, Trepk T, Shkrebtii A, Steimetz E, Zorn M, Richter W
THIN SOLID FILMS 313 巻 頁： 537-543 1998年2月
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Ellipsometric and reflectance-anisotropy measurements on rotating samples 査読有り
Haberland K, Hunderi O, Pristovsek M, Zettler JT, Richter W
THIN SOLID FILMS 313 巻 頁： 620-624 1998年2月
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Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing 査読有り
Pahlke D, Kinsky J, Schultz C, Pristovsek M, Zorn M, Esser N, Richter W
PHYSICAL REVIEW B 56 巻 ( 4 ) 頁： R1661-R1663 1997年7月
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Optical anisotropies of InP(001) surfaces 査読有り
Goletti C, Esser N, ReschEsser U, Wagner V, Foeller J, Pristovsek M, Richter W
JOURNAL OF APPLIED PHYSICS 81 巻 ( 8 ) 頁： 3611-3615 1997年4月
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In situ surface passivation of III-V semiconductors in MOVPE by amorphous As and P layers 査読有り
Knorr K, Pristovsek M, ReschEsser U, Esser N, Zorn M, Richter W
JOURNAL OF CRYSTAL GROWTH 170 巻 ( 1-4 ) 頁： 230-236 1997年1月
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Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples 査読有り
Esser N, ReschEsser U, Pristovsek M, Richter W
PHYSICAL REVIEW B 53 巻 ( 20 ) 頁： 13257-13259 1996年5月
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Real time diagnostics of semiconductor surface modifications by reflectance anisotropy spectroscopy 査読有り
Zettler JT, Richter W, Ploska K, Zorn M, Rumberg J, Meyne C, Pristovsek M
SEMICONDUCTOR CHARACTERIZATION 頁： 537-543 1996年
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Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001) 査読有り
Zettler JT, Wethkamp T, Zorn M, Pristovsek M, Meyne C, Ploska K, Richter W
APPLIED PHYSICS LETTERS 67 巻 ( 25 ) 頁： 3783-3785 1995年12月
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Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001) 査読有り
Zettler JT, Rumberg J, Ploska K, Stahrenberg K, Pristovsek M, Richter W, Wassermeier M, Schutzendube P, Behrend J, Daweritz L
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 152 巻 ( 1 ) 頁： 35-47 1995年11月
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Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy 査読有り
Ploska K, Pristovsek M, Richter W, Jonsson J, Kamiya I, Zettler JT
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 152 巻 ( 1 ) 頁： 49-59 1995年11月
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SURFACE PROCESSES BEFORE AND DURING GROWTH OF GAAS(001) 査読有り
PLOSKA K, ZETTLER JT, RICHTER W, JONSSON J, REINHARDT F, RUMBERG J, PRISTOVSEK M, ZORN M, WESTWOOD D, WILLIAMS RH
JOURNAL OF CRYSTAL GROWTH 145 巻 ( 1-4 ) 頁： 44-52 1994年12月
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EFFICIENCY OF ARSENIC AND PHOSPHORUS PRECURSORS INVESTIGATED BY REFLECTANCE ANISOTROPY SPECTROSCOPY 査読有り
KURPAS P, JONSSON J, RICHTER W, GUTSCHE D, PRISTOVSEK M, ZORN M
JOURNAL OF CRYSTAL GROWTH 145 巻 ( 1-4 ) 頁： 36-43 1994年12月