論文 - PRISTOVSEK Markus
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Interface and Surface Dielectric Anisotropies of GaP/Si(100) 査読有り
Supplie O., Hannappel T., Pristovsek M., Doescher H.
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 頁： 137-+ 2013年
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Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE 査読有り
Kadir Abdul, Bellmann Konrad, Simoneit Tino, Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 209 巻 ( 12 ) 頁： 2487-2491 2012年12月
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Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN 査読有り
Ploch Simon, Wernicke Tim, Frentrup Martin, Pristovsek Markus, Weyers Markus, Kneissl Michael
APPLIED PHYSICS LETTERS 101 巻 ( 20 ) 2012年11月
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Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Wernicke Tim, Thalmair Johannes, Lohr Matthias, Pristovsek Markus, Zweck Josef, Weyers Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 356 巻 頁： 70-74 2012年10月
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MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire 査読有り
Stellmach J., Frentrup M., Mehnke F., Pristovsek M., Wernicke T., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 355 巻 ( 1 ) 頁： 59-62 2012年9月
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In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces 査読有り
Supplie Oliver, Hannappel Thomas, Pristovsek Markus, Doescher Henning
PHYSICAL REVIEW B 86 巻 ( 3 ) 2012年7月
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Growth and characterizations of semipolar (11(2)over-bar2) InN 査読有り
Dinh Duc V., Skuridina D., Solopow S., Frentrup M., Pristovsek M., Vogt P., Kneissl M., Ivaldi F., Kret S., Szczepanska A.
JOURNAL OF APPLIED PHYSICS 112 巻 ( 1 ) 2012年7月
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Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Wernicke Tim, Dinh Duc V., Pristovsek Markus, Kneissl Michael
JOURNAL OF APPLIED PHYSICS 111 巻 ( 3 ) 2012年2月
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Comparison study of N- and In-polar {0001} InN layers grown by MOVPE 査読有り
Dinh Duc V., Pristovsek M., Solopow S., Skuridina D., Kneissl M.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 9 巻 ( 3-4 ) 頁： 977-981 2012年
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Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy 査読有り
Kadir Abdul, Meissner Christian, Schwaner Tilman, Pristovsek Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 334 巻 ( 1 ) 頁： 40-45 2011年11月
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Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy 査読有り
Pristovsek Markus, Kadir Abdul, Meissner Christian, Schwaner Tilman, Leyer Martin, Kneissl Michael
JOURNAL OF APPLIED PHYSICS 110 巻 ( 7 ) 2011年10月
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Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Park Jae Bum, Stellmach Joachim, Schwaner Tilman, Frentrup Martin, Niermann Tore, Wernicke Tim, Pristovsek Markus, Lehmann Michael, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 331 巻 ( 1 ) 頁： 25-28 2011年9月
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Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal-Organic Vapour Phase Epitaxy 査読有り
Ivaldi Francesco, Meissner Christian, Domagala Jaroslaw, Kret Slawomir, Pristovsek Markus, Hoegele Michael, Kneissl Michael
JAPANESE JOURNAL OF APPLIED PHYSICS 50 巻 ( 3 ) 2011年3月
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Crystal orientation of GaN layers on (10(1)over-bar0) m-plane sapphire 査読有り
Frentrup Martin, Ploch Simon, Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 248 巻 ( 3 ) 頁： 583-587 2011年3月
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High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor 査読有り
Stellmach J., Pristovsek M., Savas Oe, Schlegel J., Yakovlev E. V., Kneissl M.
JOURNAL OF CRYSTAL GROWTH 315 巻 ( 1 ) 頁： 229-232 2011年1月
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Determination of the complex linear electro-optic coefficient of GaAs and InP 査読有り
Pristovsek Markus
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247 巻 ( 8 ) 頁： 1974-1978 2010年8月
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Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy 査読有り
Ploch Simon, Frentrup Martin, Wernicke Tim, Pristovsek Markus, Weyers Markus, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 312 巻 ( 15 ) 頁： 2171-2174 2010年7月
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Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source 査読有り
Kremzow Raimund, Pristovsek Markus, Stellmach Joachim, Savas Oezguer, Kneissl Michael
JOURNAL OF CRYSTAL GROWTH 312 巻 ( 12-13 ) 頁： 1983-1985 2010年6月
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Growth of semipolar (10(1)over-bar(3)over-bar) InN on m-plane sapphire using MOVPE 査読有り
Dinh Duc V., Pristovsek M., Kremzow R., Kneissl M.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 4 巻 ( 5-6 ) 頁： 127-129 2010年6月
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Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy 査読有り
Ploch Simon, Meissner Christian, Pristovsek Markus, Kneissl Michael
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 巻 頁： S574-S577 2009年